The invention concerns the field of microelectronics and relates to a three-dimensional component which, for example as a sensor, measures the direction of a property in a vector field. The object of the present solution is to specify a three-dimensional component that is capable of measuring and/or generating vector fields in multiple directions and/or simultaneously with low space requirements. The object is attained with a three-dimensional component for the uni-, bi-, tri- or multi-directional measurement and/or generation of vector fields, in which component at least one element made of material systems in present on a three-dimensional carrier made of at least one carrier material, which element measures and/or generates at least one vector field in at least one direction in the spatial position of the element on, against and/or in the carrier.

Various embodiments provide a triaxial magnetic sensor, formed on or in a substrate of semiconductor material having a surface that includes a sensing portion and at least one first and one second sensing wall, which are not coplanar to each other. The sensing portion and the first sensing wall form a first solid angle, the sensing portion and the second sensing wall form a second solid angle, and the first sensing wall and the second sensing wall form a third solid angle. A first Hall-effect magnetic sensor extends at least partially over the sensing portion, a second Hall-effect magnetic sensor extends at least partially over the first sensing wall, and a third Hall-effect magnetic sensor extends at least partially over the second sensing wall.

A sensor device includes: a first sensor element; a second sensor element; and a processing chip that includes a semiconductor substrate, a first processor that receives a first detection signal and processes the first detection signal, a second processor that receives the second detection signal and processes the second detection signal, and an isolation portion that electrically isolates the first processor the second processor. The first processor includes a first diagnosis unit that self-diagnoses a presence or absence of a failure. The second processor includes a second diagnosis unit that self-diagnoses a presence or absence of a failure. The processing chip identifiably outputs a first output of the first processor and a second output of the second processor.

A sensor device includes: a first sensor element; a second sensor element; and a processing chip that includes a semiconductor substrate, a first processor that receives a first detection signal and processes the first detection signal, a second processor that receives the second detection signal and processes the second detection signal, and an isolation portion that electrically isolates the first processor the second processor. The first processor includes a first diagnosis unit that self-diagnoses a presence or absence of a failure. The second processor includes a second diagnosis unit that self-diagnoses a presence or absence of a failure. The processing chip identifiably outputs a first output of the first processor and a second output of the second processor.

The present invention relates, in general terms, to magnetoresistance sensors and methods of fabrication thereof. The magnetoresistance sensor comprises a continuous graphene layer disposed on a corrugated and/or stepped surface of a substrate. At least two conductive elements are in contact with the graphene layer. The graphene layer substantially conforms to the corrugated and/or stepped surface of the substrate.

A magnetic sensor includes an MR element and a support member. A top surface of the support member includes an inclined portion. The MR element includes an MR element main body, a lower electrode, and an upper electrode. The lower electrode includes a first end closest to a lower end of the inclined portion and a second end closest to an upper end of the inclined portion. The MR element main body is located at a position closer to the second end than to the first end.

In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.

A gradiometer includes a at least one magnet attached to a beam. The magnet moves in response to a magnetic force. A sensing element is configured to measure movement or deflection of the beam or magnet. The gradiometer is configured to determine a gradient of a magnetic field acting on the first magnet based on movement of the magnet. The gradiometer can further measure higher order gradients.

A magnetic sensor using a spin-orbit torque (SOT) and a sensing method using the same, include an SOT channel layer made of a heavy metal material, a ferromagnetic layer stacked on the SOT channel layer, and a protective layer stacked on the ferromagnetic layer, wherein an SOT is generated due to a current applied to the SOT channel layer to vary magnetization of the ferromagnetic layer, and the magnetic sensor which utilizes an SOT with a fast response speed and high sensitivity using a simplified metal thin film structure in which the SOT is generated is provided.

A magnetic sensor device includes at least one magnetic sensor and a support. A center of gravity of an element layout area of the at least one magnetic sensor is deviated from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four resistor sections constituted by a plurality of magnetoresistive elements. Magnetization of a free layer in each of two of the resistor sections includes a component in a third magnetization direction. The magnetization of a free layer in each of the other two resistor sections includes a component in a fourth magnetization direction opposite to the third magnetization direction.