Patent classifications
G01R33/02
SHORT-CIRCUIT DETECTION DEVICE AND SHORT-CIRCUIT DETECTION METHOD
The short-circuit detection device according to the present disclosure includes: a signal acquisition unit configured to acquire, from a magnetic flux detector configured to detect a magnetic flux generated in a gap between a rotor and a stator of a rotary electric machine, one detected signal based on the magnetic flux and set the one detected signal as a first detected signal and a second detected signal; a signal processing unit configured to perform frequency analysis on the first detected signal, and generate and decode a voltage signal simulating a voltage state assumed in a normal case; and a signal comparison unit configured to perform comparison between a decoded signal obtained through the decoding by the signal processing unit and the second detected signal transmitted from the signal acquisition unit, to detect a short-circuit in a field winding of the rotary electric machine.
MAGNETIC DETECTION SYSTEM, MAGNETIC SIGNAL WAVEFORM PATTERN CLASSIFICATION METHOD, AND WAVEFORM PATTERN DISTRIBUTION GENERATION METHOD FOR MAGNETIC DETECTION SYSTEM
The magnetic detection system (100) is provided with a magnetic sensor (1) and a waveform pattern classification unit (33c). The waveform pattern classification unit (33c) is configured to classify waveform patterns of magnetic signals acquired by the magnetic sensor (1) based on a waveform pattern distribution (60) generated based on a plurality of fully connected layers (52c) generated by weighting and connecting respective features in waveform patterns for each waveform pattern by machine-learning, and features in the waveform patterns of the magnetic signals.
PHOTONIC RYDBERG ATOM RADIO FREQUENCY RECEIVER AND MEASURING A RADIO FREQUENCY ELECTRIC FIELD
A photonic Rydberg atom radio frequency receiver includes: an integrated photonic chip; an atomic vapor cell; and a receiver member including: a photonic emitter; probe light reflectors disposed on the atomic vapor cell; and coupling light reflectors disposed on the atomic vapor cell such that the pair of coupling light reflectors is optically opposed across the interior vapor space and receives and reflects the coupling laser light so that the coupling laser light is reflected between the coupling light reflectors multiple times in the interior vapor space of the atomic vapor cell.
Wafer alignment markers, systems, and related methods
A method of aligning a wafer for semiconductor fabrication processes may include applying a magnetic field to a wafer, detecting one or more residual magnetic fields from one or more alignment markers within the wafer, responsive to the detected one or more residual magnetic fields, determining locations of the one or more alignment markers. The marker locations may be determined relative to an ideal grid, followed by determining a geometrical transformation model for aligning the wafer, and aligning the wafer responsive to the geometrical transformation model. Related methods and systems are also disclosed.
Electrostatically controlled gallium nitride based sensor and method of operating same
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.
Electrostatically controlled gallium nitride based sensor and method of operating same
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.
Systems and methods for improving orientation measurements
Systems and methods for determining orientations measurements are provided. In one aspect, the method includes receiving a magnetic field state of an object, receiving a magnetic field measurement associated with the object, receiving an inertial measurement unit (IMU) measurement associated with the object, receiving a previous gravitational state term associated with the object, determining a gravitational acceleration state term based on the IMU measurement and the previous gravitational state term, determining a magnetic field state term based on the IMU measurement, the magnetic field measurement, and the gravitational acceleration term, and determining an orientation of the object using the gravitational acceleration state term and the magnetic field state term. The magnetic field measurement may be received from a magnetometer, and the IMU measurement may be received from a gyroscope and an accelerometer.
Magnetometer For Large Magnetic Moments With Strong Magnetic Anisotropy
This disclosure presents systems, devices, and methods that use magnetometers to measure large magnetic moments with strong magnetic anisotropy. A torque magnetometer may include an actuator driven by a motor, a load cell coupled to the actuator, a rotatable spool having a platform configured to hold a sample of a superconductor material, where the rotatable spool is coupled to the load cell by a first line, a pulley, and a second line extending between the rotatable spool and a counterweight, where the second line is positioned on the pulley. Movement of the actuator may cause the rotatable spool to rotate an angle of the platform relative to a magnetic field about the rotatable spool, and the load cell is capable of measuring the tension on the first line.
Magnetic Polymer Composition
A polymer composition comprising from about 20 vol. % to about 60 vol. % of a polymer matrix that includes a liquid crystalline polymer and from about 20 vol. % to about 60 vol. % of magnetic particles is provided. The ratio of the volume of the polymer matrix to the volume of the magnetic particles is from about 0.6 to about 1.5.
Magnetic Polymer Composition
A polymer composition comprising from about 20 vol. % to about 60 vol. % of a polymer matrix that includes a liquid crystalline polymer and from about 20 vol. % to about 60 vol. % of magnetic particles is provided. The ratio of the volume of the polymer matrix to the volume of the magnetic particles is from about 0.6 to about 1.5.