A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

A heads-up display may comprise a viewing screen having a reflective surface; a housing defining an opening; a display element disposed within the housing and comprising an integral linear polarizer configured to polarize light in a first direction; and a first linear polarizer disposed between the display element and the viewing screen covering the opening defined by the housing configured to polarize light in the first direction. The display element may be capable of causing images to be displayed on the viewing screen.

The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Methods and apparatus are presented for measuring a photoluminescence (PL) response, preferably a spatially resolved image of a PL response, from an object exposed to solar irradiation. In certain embodiments signals from the object are measured in two or more different spectral bands selected such that one of the measured signals has a higher PL component relative to ambient reflectance compared to another measured signal, enabling the PL component to be enhanced by a suitable differencing procedure. In other embodiments a signal from an object is measured in a spectral band selected such that at least 20% of the measured signal comprises PL generated from the object by the solar irradiation. The methods and apparatus have particular application to outdoor inspection of photovoltaic modules without having to modulate the operating point of the modules.

A single-particle localization microscope, including an optical system configured to illuminate a sample region with a sequence of light patterns having spatially different distributions of illumination light adapted to cause a single particle located in the sample region to emit detection light, a detector configured to detect a sequence of intensities of the detection light emerging from the sample region in response to the sequence of illuminating light patterns, and a processor configured to determine, based on the sequence of intensities of the detection light, an arrangement of potential positions for locating the particle. The processor further illuminates the sample region with at least one subsequent light pattern, causes detection of at least one subsequent intensity, and decides, based on the at least one subsequent intensity of the detection light, which one of the multiple potential positions represents an actual position of the particle in the sample region.

An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

Provided is a first bias power source that generates a first data bias voltage to be applied to an optical modulation unit for the I component, a second bias power source that generates a second data bias voltage to be applied to an optical modulation unit for the Q component, and a third bias power source that generates a quadrature bias voltage to be applied to an optical phase shifter, a data bias voltage adjustment unit that applies a feedback control to each of the first bias power source and the second bias power source, and a quadrature bias voltage adjustment unit that determines whether or not the quadrature bias voltage is optimal on a basis of a second optical QAM signal generated by an IQ optical modulator, and applies a feedback control to the third bias power source, in which a first optical QAM signal and the second optical QAM signal are generated by the IQ optical modulator but the optical phase difference between an optical electric field EI and an optical electric field EQ differs by π.

Provided is a first bias power source that generates a first data bias voltage to be applied to an optical modulation unit for the I component, a second bias power source that generates a second data bias voltage to be applied to an optical modulation unit for the Q component, and a third bias power source that generates a quadrature bias voltage to be applied to an optical phase shifter, a data bias voltage adjustment unit that applies a feedback control to each of the first bias power source and the second bias power source, and a quadrature bias voltage adjustment unit that determines whether or not the quadrature bias voltage is optimal on a basis of a second optical QAM signal generated by an IQ optical modulator, and applies a feedback control to the third bias power source, in which a first optical QAM signal and the second optical QAM signal are generated by the IQ optical modulator but the optical phase difference between an optical electric field EI and an optical electric field EQ differs by π.

A phase shifter includes a substrate layer, a cladding layer, and a waveguide. The phase shifter includes a waveguide and a heating element. The phase shifter includes a thermally conductive structure disposed on the cladding layer to disperse heat from the waveguide. The thermally conductive structure may include a metal strip disposed longitudinally along the beam, may include thermally conductive pads, and/or may include thermally conductive vias coupled between the cladding layer and the substrate layer. The phase shifter may be incorporated into light detection and ranging (LIDAR) devices, telecommunications devices, and/or computing devices.

A multi-layer device comprising a first substrate, a first electrically conductive layer and a first current modulating structure on a surface thereof, the first current modulating structure comprising a composite of a resistive material and a patterned insulating material, the first current modulating structure having a cross-layer resistance to the flow of electrical current through the first current modulating structure that varies as a function of position.