The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

A liquid crystal display apparatus switches modes from a normal display mode to a stop preparation mode when a main power source voltage drops. In the display mode, a gate drive circuit sequentially applies a first gate-on pulse to gate bus lines so as to select pixel rows sequentially, and applies a second gate-on pulse to buffer capacitor scanning lines, each of which is associated with a pixel row selected by the first gate-on pulse, during a period that does not overlap a period during which the first gate-on pulse is applied, and a source drive circuit applies a display signal voltage to source bus lines. In the stop preparation mode, the gate drive circuit sequentially applies the first gate-on pulse to the gate bus lines so as to select the pixel rows sequentially, and applies the second gate-on pulse to the buffer capacitor scanning lines, each of which is associated with the pixel row selected by the first gate-on pulse, during a period that at least partially overlaps a period during which the first gate-on pulse is applied, and the source drive circuit applies 0 V to the source bus lines.

An electro-optic modulator for a waveguide is presented. The electro-optic modulator includes a first semiconductor layer, a second semiconductor layer, a dielectric layer interposed between the second semiconductor layer and the first semiconductor layer and a coupling layer for coupling a guided mode of the waveguide to at least one of the first semiconductor layer and the second semiconductor layer. The electro-optic modulator is configured to induce a modulation on the guided mode of the waveguide by changing a refractive index in response to a voltage applied between the first semiconductor layer and the second semiconductor layer.

To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

A display device is disclosed, which includes: a substrate; a scan line disposed on the substrate; a drain electrode, disposed on the substrate and including an arc edge; a first transparent conductive layer disposed on the substrate; and a second transparent conductive layer disposed between the substrate and the first transparent conductive layer, wherein the arc edge is located outside the scan line, and the arc edge is not overlapped with the second transparent conductive layer.

The liquid crystal display device includes a pixel portion including a plurality of pixels to which image signals are supplied; a driver circuit including a signal line driver circuit which selectively controls a signal line and a gate line driver circuit which selectively controls a gate line; a memory circuit which stores the image signals; a comparison circuit which compares the image signals stored in the memory circuit in the pixels and detects a difference; and a display control circuit which controls the driver circuit and reads the image signal in accordance with the difference. The display control circuit supplies the image signal only to the pixel where the difference is detected. The pixel includes a thin film transistor including a semiconductor layer including an oxide semiconductor.

Described herein is a dynamic optical modulator including a plurality of pixels arranged in a grid, the pixels comprising a plurality of unit-cells, the unit-cell comprising a dielectric layer sandwiched between two at least partially conductive layers, wherein the optical characteristics of each of said unit-cells is controlled by the application of a voltage across each of the pixels of the plurality of pixels.

In an electro-optical device, a first opening and a second opening are provided in an interlayer insulating layer provided in a layer between a transistor and a scanning line, with a semiconductor layer interposed between the first opening and the second opening in plan view. A portion of a gate electrode is provided inside the first opening, and the gate electrode is electrically connected to the scanning line via the first opening. The second opening does not overlap with the gate electrode, and a portion of a first capacitance electrode of a capacitance element is provided in the second opening, the first capacitance electrode having light shielding properties. Therefore, the width of the scanning line can be made narrower than in a case in which the gate electrode and the scanning line are electrically connected to each other via both the first opening and the second opening.

A thin film transistor substrate comprises: a substrate; a scan line disposed on the substrate and extending along a first direction; a semiconductor layer disposed on the scan line; and a drain electrode disposed on the semiconductor layer and comprising an arc edge outside the scan line, wherein a part of the semiconductor layer extends along a second direction perpendicular to the first direction and the arc edge overlaps the part of the semiconductor layer.