Patent classifications
G02F2203/10
ELECTROCHROMIC DEVICE CONTAINING COLOR-TUNABLE NANOSTRUCTURES
An electrochromic device and method, the device including: a first transparent conductor layer; a working electrode disposed on the first transparent conductor layer and including nanostructures; a counter electrode; a solid state electrolyte layer disposed between the counter electrode and the working electrode; and a second transparent conductor layer disposed on the counter electrode. The nanostructures may include transition metal oxide nanoparticles and/or nanocrystals configured to tune the color of the device by selectively modulating the transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.
DISPLAY COMPONENT AND DISPLAY APPARATUS
The present disclosure is related to a display component. The display component may include a display module and a viewing angle switch module at a light-exiting side of the display module. The display module may include a plurality of columns of light-emitting pixels on a base substrate. Each of the light-emitting pixels may include a first electrode layer, a nanoparticle layer, and a transparent second electrode layer in this order on the base substrate. The nanoparticle layer may include nanoparticles of a first metal, each of the nanoparticles of the first metal having a convex protrusion on a side away from the first electrode layer. The transparent second electrode layer may include a nanoparticle of a second metal.
Optical device
An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.
Optical device
An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.
WIDEBAND GRAPHENE-BASED ELECTRO-OPTIC ENTANGLER
A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.
WIDEBAND GRAPHENE-BASED ELECTRO-OPTIC ENTANGLER
A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.
ULTRA-FAST OPTICAL MODULATION AND ULTRA-SHORT PULSE GENERATION BASED ON TUNABLE GRAPHENE-PLASMONIC HYBRID METASURFACES
An optical device is disclosed. The optical device includes a silicon substrate, an aluminum oxide layer, an aluminum layer between the silicon substrate and the aluminum oxide layer, and a metasurface nanostructure. The metasurface nanostructure may include a graphene monolayer on the aluminum oxide layer and an electrically conductive nanoantenna array in direct contact with the graphene monolayer, where each nanoantenna in the nanoantenna array may include multiple segments, each segment having one or more parameters selected to achieve simultaneous resonance in the mid-infrared and the near infrared spectral regions when the graphene monolayer is irradiated with a near infrared pump pulse and a continuous mid-infrared probe. The optical device generates mid-infrared pulses via ultrafast modulation of hot carriers in the monolayer graphene.
DISPLAY COVER PLATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE
A display cover plate, a manufacturing method therefor and a display device are provided, The display cover plate includes: a substrate; and an electrochromic unit on the substrate, the electrochromic unit includes: a first electrode on the substrate; an electrochromic layer on a side of the first electrode away from the substrate; and a second electrode on a side of the electrochromic layer away from the substrate, wherein the first electrode and the second electrode are configured to generate an electric field, and the electrochromic layer allows light of different colors to pass through based on a change of the electric field.
Hybrid silicon-transparent conductive oxide devices
Electrically tunable hybrid silicon-transparent conductive oxide (Si-TCO) devices, such as dual-electrode micro-ring resonators and micro-disks for large-scale on-chip wavelength division multiplexing optical interconnects.
Wideband graphene-based electro-optic entangler
A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.