An optical switch structure includes a substrate, a first electrical contact, a first material having a first conductivity type electrically connected to the first electrical contact, a second material having a second conductivity type coupled to the first material, and a second electrical contact electrically connected to the second material. The optical switch structure also includes a waveguide structure disposed between the first electrical contact and the second electrical contact and comprising a waveguide core coupled to the substrate and including a first material characterized by a first index of refraction and a first electro-optic coefficient and a waveguide cladding at least partially surrounding the waveguide core and including a second material characterized by a second index of refraction and a second electro-optic. The first index of refraction is greater than the second index of refraction the first electro-optic coefficient is less than the second electro-optic coefficient

Binary-phase-shift-key, phase-modulated waveforms with gigahertz bandwidths, suitable for kilowatt-class fiber amplifiers, can be narrowed back to the source laser’s linewidth via second-harmonic, sum-frequency, or difference-frequency generation in a second-order nonlinear crystal. The spectrum of an optical signal phase-modulated with a pseudo-random bit sequence (PRBS) waveform recovers its original optical spectrum when frequency-doubled using second-harmonic generation (SHG). Conceptually, the PRBS waveform is cancelled by the SHG process, and the underlying laser spectrum is converted to the second-harmonic wavelength as though the PRBS modulation were not present. The same cancellation is possible with sum-frequency generation (SFG) and difference frequency generation (DFG), making it possible to construct high-power, narrow-linewidth lasers at wavelengths from the visible to the long-wave infrared. Using ytterbium-, erbium-, thulium-, and neodymium-doped fibers with SHG, SFG and DFG processes allows generation of high-power beams with very narrowband optical spectra and wavelengths from below 400 nm to beyond 5 .Math.m.

A laser processing apparatus includes a spatial light modulator for inputting laser light output from a laser light source and outputting laser light after phase modulation by a hologram, and a control unit for presenting, on the spatial light modulator, the hologram for focusing the laser light after the phase modulation output from the spatial light modulator on a plurality of irradiation points in a processing object by a focusing optical system. The control unit controls light intensities of at least two irradiation points included in the plurality of irradiation points independently of each other.

A method for on-silicon integration of a III-V-based material component includes providing a first substrate having a silicon-based optical layer including a waveguide, transferring a second substrate of III-V-based material on the optical layer, and forming the III-V component from the second substrate, so as to enable a coupling between the waveguide and the III-V component, by preserving a III-V-based material layer extending laterally. The method also includes forming by epitaxy from the III-V layer, an InP:Fe-based structure laterally bordering the III-V component, forming a layer including contacts configured to contact the III-V component, and transferring a third silicon-based substrate onto the layer including the contacts.

A phase modulation active device and a method of driving the same are provided. The method may include configuring, for the phase modulation active device including a plurality of channels that modulate a phase of incident light, a phase profile indicating a phase modulation target value to be implemented by the phase modulation active device; setting a phase limit value of the phase modulation active device; generating a modified phase profile based on the phase profile by modifying the phase modulation target value, for at least one channel from the plurality of channels that meets or exceeds the phase limit value, to a modified phase modulation target value that is less than the phase limit value in the phase profile; and operating the phase modulation active device based on the modified phase profile. Thus, improved optical modulation performance may be achieved.

Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

A liquid crystal device in one aspect of the present disclosure includes a liquid crystal layer, and an electrode layer configured to form an electric field in the liquid crystal layer. The liquid crystal layer includes a liquid crystal composition in which an organic compound having a property of inhibiting a polymerization reaction caused by light action is added to a liquid crystal mixture as a polymerization inhibitor.

An electro-optical includes, in part, a multitude of phase modulators each of which includes, in part, a p-type semiconductor region, an n-type semiconductor region, and a χ.sup.(2) insulating dielectric material disposed between the p-type and n-type semiconductor regions. The electro-optical device may be a phased array in which each phase modulator is associated with a different one of the transmitting elements of the phased array. The χ.sup.(2) insulating dielectric material may be an organic polymer. The electro-optical device may further include, in part, a multitude of sensors each associated with a different one of the phase modulators. Each sensor is adapted to receive a phase modulated signal generated by the sensor’s associated phase modulator. The electro-optical device may further include, in part, a multitude of amplitude modulators each associated with a different one of the multitude of phase modulators.

An augmented reality display device, which is configured to provide an augmented reality image to an eye of a user, includes a display module and multiple mirror sets. The display module includes a projector and multiple switching elements. The projector provides an original image beam. The switching elements are deposed sequentially on a path of the original image beam. Each of the switching elements reflects or transmits the original image beam. Reflection paths of each ray of the original image beam on the switching elements intersect at one point to generate multiple image beams. The mirror sets are disposed on paths of the image beams. The image beams are reflected at different angles on the mirror sets, and the mirror sets reflect the image beams to the eye.

The present disclosure provides a liquid crystal phase shifter array, a driving method thereof, and a laser scanner. The liquid crystal phase shifter array includes a plurality of liquid crystal phase shifter units arranged in array, a first substrate and a second substrate disposed opposite to each other, a liquid crystal layer provided between the first substrate and the second substrate, a first electrode provided on the first substrate, and a second electrode provided on the second substrate. Each liquid crystal phase shifter unit includes a first optical waveguide provided on a side of the first substrate proximal to the liquid crystal layer and arranged to be in direct contact with the liquid crystal layer.