[Object] To provide an optical element and an electronic apparatus having a high response speed and high controllability of a modulation wavelength.

[Solving Means] An optical element according to the present technology includes a first conductor film, a second conductor film, and a dielectric film. The first conductor film has light transmittance and capable of controlling optical transition energy by a Fermi level adjustment. The second conductor film has the light transmittance and capable of controlling the optical transition energy by the Fermi level adjustment. The dielectric film is arranged between the first conductor film and the second conductor film and has the light transmittance and elasticity.

This patent document provides optical processing and switching of optical channels based on mode-division multiplexing (MDM) and wavelength division multiplexing (WDM). In one implementation, a method is provided for processing different optical signal channels to include receiving different input optical signal channels in different optical waveguide modes and in different wavelengths; converting input optical signal channels in multimodes into single-mode optical signal channels, respectively; subsequent to the conversion, processing single-mode optical signal channels obtained from the different input optical signal channels to re-group single-mode optical signal channels into different groups of processed single-mode optical signal channels; and converting different groups of the processed single-mode optical signal channels into different groups of output optical signal channels containing one or more optical signal channels in multimodes multimode signals to direct the groups as different optical outputs.

According to an aspect disclosed, there is provided a display apparatus and a manufacturing method capable of maintaining color conversion efficiency and simultaneously expanding a color gamut by emitting light of two wavelengths to one light source. A display apparatus includes a light source configured to emit signal light having a first peak center wavelength and excitation light having a second peak center wavelength shorter than the first peak center wavelength; and a converter configured to convert color of the excitation light emitted by the light source. The light source may be configured to include at least one single chip in which a first semiconductor layer emitting the excitation light and a second semiconductor layer emitting the signal light are arranged in a horizontal or vertical direction.

A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.

A display includes a display modulation layer, a backlight unit configured to generate light for illumination of the display modulation layer, and a filter film disposed between the backlight unit and the display modulation layer. The filter film includes a plurality of Bragg grating sets. Each Bragg grating set is configured to reflect the light in a wavelength-selective and angular-selective manner rearward toward the backlight unit.

A method for generating a control signal for an acousto-optical element includes generating a raw signal using at least one correction term by an IQ modulation from a target I component and a target Q component, and amplifying the raw signal to become the control signal. The target I component and/or the target Q component are corrected using the at least one correction term. The at least one correction term is obtained from an analysis of the control signal.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

An optical device according to the embodiment of the inventive concept includes a waveguide path including a light generation region, a wavelength variable region, and a light modulation region, a first light waveguide layer provided in the light generation region to generate light, a second light waveguide layer provided in the wavelength variable region and connected to the first light waveguide layer, a ring-shaped third light waveguide layer provided in the light modulation region and connected to the second light waveguide layer, and first and second light modulation electrodes spaced apart from each other with the light modulation region therebetween. Here, the first light modulation electrode, the third light waveguide layer, and the second light modulation electrode vertically overlap each other.

A pixel for creating an optical phase change includes a transparent electrical insulator, a first electrical conductor disposed on the transparent electrical insulator, the first electrical conductor comprising an antenna component and a connector component, an electrical insulator disposed on the first electrical conductor, a transparent semiconductor disposed on the electrical insulator, and a second electrical conductor disposed on the transparent semiconductor. The transparent semiconductor is sufficiently thick to prevent plasmonic resonance from occurring at an interface between the transparent semiconductor and the second electrical conductor.

An electric response infrared reflection device and a preparation method thereof. The device comprises three light-transmitting conductive substrates which are oppositely arranged. Two adjacent light-transmitting conductive substrates of the three light-transmitting conductive substrates are respectively packaged to form a first adjusting area and a second adjusting area. Both the first adjusting area and the second adjusting area are filled with liquid crystal layers. Each of the liquid crystal layers comprises a mixed liquid crystal material. The mixed liquid crystal material comprises a chiral nematic phase liquid crystal, a monomer, a photoinitiator, and a chiral dopant. The spiral direction of the chiral nematic phase liquid crystal in the first adjusting area is opposite to the spiral direction of the chiral nematic phase liquid crystal in the second adjusting area, so that the total reflection of an infrared band can be implemented.