A programmable two-dimensional simultaneous multi-beam optically operated phased array receiver chip is manufactured based on silicon-on-insulator (SOI) and indium phosphide (InP) semiconductor manufacturing processes, including the SiN process. The InP-based semiconductor is used for preparing a laser array chip and a semiconductor optical amplifier array chip, the SiN is used for preparing an optical power divider, and the SOI semiconductor is used for preparing a silicon optical modulator, a germanium-silicon detector, an optical wavelength multiplexer, a true delay line, and other passive optical devices. The whole integration of the receiver chip is realized through heterogeneous integration of the InP-based chip and the SOI-based chip. Simultaneous multi-beam scanning can be realized through peripheral circuit programming control. The chip not only can realize two-dimensional multi-beam scanning, but also has strong expansibility, such that the chip can be used for ultra-wideband high-capacity wireless communication and simultaneous multi-target radar recognition systems.

An optoelectronic device and an array comprising a plurality of the same. The device(s) comprising: an optically active region with an electrode arrangement for applying an electric field across the optically active region; a first curved waveguide, arranged to guide light into the optically active region; and a second curved waveguide, arranged to guide light out of the optically active region; wherein the first curved waveguide and the second curved waveguide are formed of a material having a different band-gap from a band-gap of the optically active region, and wherein the overall guided path formed by the first curved waveguide, the optically active region and the second curved waveguide is U-shaped.

A method of providing electrical isolation between subsections in a waveguide structure for a photonic integrated device, the structure comprising a substrate, a buffer layer and a core layer, the buffer layer being located between the substrate and the core and comprising a dopant of a first type, the first type being either n-type or p- type, the method comprising the steps of prior to adding any layer to a side of the core layer opposite to the buffer layer: selecting at least one area to be an electrical isolation region, applying a dielectric mask to a surface of the core layer opposite to the buffer layer, with a window in the mask exposing an area of the surface corresponding to the selected electrical isolation region, implementing diffusion of a dopant of a second type, the second type being of opposite polarity to the first type, and allowing the dopant of the second type to penetrate to the substrate to form a blocking junction.

An optoelectronic device and an array comprising a plurality of the same. The device(s) comprising: an optically active region with an electrode arrangement for applying an electric field across the optically active region; a first curved waveguide, arranged to guide light into the optically active region; and a second curved waveguide, arranged to guide light out of the optically active region; wherein the first curved waveguide and the second curved waveguide are formed of a material having a different band-gap from a band-gap of the optically active region, and wherein the overall guided path formed by the first curved waveguide, the optically active region and the second curved waveguide is U-shaped.

An optoelectronic device and an array comprising a plurality of the same. The device(s) comprising: an optically active region with an electrode arrangement for applying an electric field across the optically active region; a first curved waveguide, arranged to guide light into the optically active region; and a second curved waveguide, arranged to guide light out of the optically active region; wherein the first curved waveguide and the second curved waveguide are formed of a material having a different band-gap from a band-gap of the optically active region, and wherein the overall guided path formed by the first curved waveguide, the optically active region and the second curved waveguide is U-shaped.

An optical source may include an optical gain chip that provides an optical signal and that is optically coupled to an SOI chip. The optical gain chip may include a reflective layer. Moreover, the SOI chip may include: a first optical waveguide, a first ring resonator that selectively optically coupled to a second optical waveguide and that performs phase modulation and filtering of the optical signal, the second optical waveguide, an amplitude modulator, and an output port. Note that the reflective layer in the optical gain chip and the amplitude modulator may define an optical cavity. Furthermore, a resonance of the first ring resonator may be aligned with a lasing wavelength, and the resonance of the first ring resonator and a resonance of the amplitude modulator may be offset from each other. Additionally, modulation of the first ring resonator and the amplitude modulator may be in-phase with each other.

An optical coherent transceiver comprising a polarization and phase-diversity coherent receiver and a polarization and phase-diversity modulator on the same substrate interfaced by three grating couplers, on grating coupler coupling in a signal, one grating coupler coupling in a laser signal, and a third grating coupler coupling out a modulated signal.

An integrated optical beam steering device includes a planar dielectric lens that collimates beams from different inputs in different directions within the lens plane. It also includes an output coupler, such as a grating or photonic crystal, that guides the collimated beams in different directions out of the lens plane. A switch matrix controls which input port is illuminated and hence the in-plane propagation direction of the collimated beam. And a tunable light source changes the wavelength to control the angle at which the collimated beam leaves the plane of the substrate. The device is very efficient, in part because the input port (and thus in-plane propagation direction) can be changed by actuating only log.sub.2 N of the N switches in the switch matrix. It can also be much simpler, smaller, and cheaper because it needs fewer control lines than a conventional optical phased array with the same resolution.

A system is disclosed for producing an output photon having a predefined frequency. The system comprises a frequency comb generator for generating a frequency comb. The system further comprises a frequency comb mode selector configured to: receive a heralding signal representative of the detection of a first photon of a frequency-correlated photon pair, the heralding signal indicative of a frequency of the heralded second photon of the frequency-correlated photon pair; and select, based on the received heralding signal, a comb spectral mode of the frequency comb. The system further comprises a non-linear photonic element configured to receive the heralded second photon and the selected comb spectral mode and produce an output photon having the predefined frequency based on the frequency of the heralded second photon and the selected comb spectral mode. Methods, controllers and computer-readable media are also described herein.

An optical source may include an optical gain chip that provides an optical signal and that is optically coupled to an SOI chip. The optical gain chip may include a reflective layer. Moreover, the SOI chip may include: a common optical waveguide, a splitter that splits the optical signal into optical signals, a first pair of resonators that are selectively optically coupled to the common optical waveguide and that are configured to perform modulation and filtering of the optical signals, and a first bus optical waveguide that is selectively optically coupled to the first pair of resonators. Furthermore, resonance wavelengths of the resonators may be offset from each other with a (e.g., fixed) separation approximately equal or corresponding to a modulation amplitude, and a reflectivity of the first pair of resonators may be approximately independent of the modulation.