The present invention provides an optical modulator, which can be reduced in size with size reduction of an optical waveguide and electric wiring as compared to a conventional optical modulator. An optical modulator according to an embodiment includes a substrate; an optical waveguide provided on the substrate and configured to guide light; a modulation unit formed of part of the optical waveguide and configured to modulate the light; and electric wires provided on the substrate and configured to supply a high-frequency electric signal to the modulation unit. One end portion and another end portion of the optical waveguide are provided on a first end surface, one end portion of the electric wiring is provided along the first end surface, another end portion of the electric wiring is provided along a second end surface being different from the first end surface.

A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000/mm.sup.2.

A Super System is disclosed and its inputs/outputs are coupled with a Mach-Zehnder interferometer (MZI), wherein the Mach-Zehnder interferometer (MZI) can be coupled with a first optical waveguide either in a two-dimensional (2-D) or in a three-dimensional (3-D) arrangement. The first optical waveguide can be then coupled with (i) a semiconductor optical amplifier (SOA) and/or (ii) a second optical waveguide (that can include an optical resonator) either in a two-dimensional (2-D) or in a three-dimensional (3-D) arrangement. The Super System can include multipliers of matrices and graphic processors.

In an EADFB laser with an integrated SOA, a new configuration in which deterioration of optical waveform quality is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and the manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a carrier density is optimized depending on a light intensity inside the SOA and an amount of carrier consumption. The SOA is electrically separated into a plurality of regions, and a current is injected into each region independently. The divided SOA region is configured so that a length of the SOA region becomes shorter as a region is farther from an incidence end of the SOA. Further, for the divided SOA, an amount of carrier consumption increases as the SOA region is farther from the incidence end, so that a current injection amount is increased.

An optoelectronic device (20, 50, 120, 320, 500, 540, 560, 600) includes an array (32, 72, 124) of optical transceiver cells (34, 74, 90, 126, 522) disposed on a planar substrate (30). Each transceiver cell includes an optical transducer (36) configured to couple optical radiation between the transceiver cell and a target. An optical distribution tree (122) including a network (38, 76, 428, 518, 524) of waveguides (142, 150) and switches (146, 429), is disposed on the substrate and coupled to convey coherent radiation from a radiation source (52, 128, 130, 426, 510, 606) to the optical transceiver cells. A controller (48) is configured to actuate the switches so as to select different subsets of the optical transceiver cells that are to receive the coherent radiation from the optical distribution tree and to transmit the coherent radiation toward the target at different times during a scan of the target.

An integrated photonics chip comprising: a plurality of optical channels extending a length of the integrated photonics chip; at least one variable optical attenuator (VOA) being optically connected to one of the plurality of optical channels, the at least one VOA comprising a silicon diode; at least one modulator being optically connected to another of the plurality of optical channels, the at least one modulator comprising a silicon diode; wherein the silicon diodes of the at least one VOA and the at least one modulator are adapted to receive biasing voltages; and wherein an application of the biasing voltages causes the silicon diodes of the at least one VOA and the at least one modulator to be reverse-biased, such that the at least one VOA and the at least one modulator are each adapted to detect a photocurrent of an optical signal being propagated along the plurality of optical channels.

An optical phased array according to an example embodiment includes a light source configured to emit a light in an infrared band; a light irradiator configured to receive the emitted light and irradiate the light to an outside; a phase modulation optical amplification unit provided between the light source and the light irradiator; and an optical splitting configured to split the light emitted from the light source, wherein the phase modulation optical amplification unit is configured to amplify the light emitted from the light source while modulating a first phase of the emitted light to a second phase, and includes: a phase modulator configured to cause a portion of a phase difference between the first phase and the second phase; and a phase modulation optical amplifier configured to amplify the emitted light while causing a remaining portion of the phase difference.

A Super System is disclosed and its inputs/outputs are coupled with a Mach-Zehnder interferometer (MZI), wherein the Mach-Zehnder interferometer (MZI) can be coupled with a first optical waveguide either in a two-dimensional (2-D) or in a three-dimensional (3-D) arrangement. The first optical waveguide can be then coupled with (i) a semiconductor optical amplifier (SOA) and/or (ii) a second optical waveguide (that can include an optical resonator) either in a two-dimensional (2-D) or in a three-dimensional (3-D) arrangement. The Super System can include multipliers of matrices and/or graphic processors.

An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.