A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise an absorber layer comprising a material selected from the group consisting of ruthenium (Ru) and one or more elements of Group 1, Ru and one or more elements of Group 1 and one or more elements of Group 2, Ru and one or more elements of Group 1 and tantalum (Ta), Ru and one or more elements of Group 1 and Ta and one or more elements of Group 2, tellurium (Te) and nickel (Ni), and tellurium (Te) and aluminum (Al).

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

A method includes forming protective layer over substrate edge and photoresist over substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups. Pendant acid-labile groups include polar functional groups; acid-labile groups including polar switch functional groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structure ##STR00001##
wherein R1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

A method includes forming protective layer over substrate edge and photoresist over substrate. Protective layer removed and photoresist exposed to radiation. Protective layer made of composition including acid generator and polymer having pendant acid-labile groups. Pendant acid-labile groups include polar functional groups; acid-labile groups including polar switch functional groups; acid-labile groups, wherein greater than 5% of pendant acid-labile groups have structure ##STR00001##
wherein R1 is C6-C30 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, cycloalkyl carboxyl group, saturated or unsaturated hydrocarbon ring, or heterocyclic group; and R2 is C4-C9 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alkyl carboxyl group, or cycloalkyl carboxyl group; polymer having pendant acid-labile groups and lactone pendant groups; or polymer having pendant acid-labile groups and carboxylic acid groups.

A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σ.sub.α) of greater than 2×10.sup.6 cm.sup.2/mol and then forming the EUV photoresist over the high-z underlayer.

Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σ.sub.α) of greater than 2×10.sup.6 cm.sup.2/mol and then forming the EUV photoresist over the high-z underlayer.