A memory device is provided. The memory device includes a main feature disposed beneath a surface of a photolithographic mask. The memory device further includes at least one Sub-Resolution Assistant Feature (SRAF) proximate to the main feature beneath the surface. The main feature has an electrical conductivity based on an area relationship with the at least one SRAF.

A method of manufacturing a template including a mesa on a second side is disclosed. The method can include depositing a first coating on the second side, depositing a photocurable material over a top of the mesa, contacting the photocurable material with a second surface to cause the photocurable material to cover the top surface of the mesa and at least a portion of a side of the mesa, curing the photocurable material to form a cured film on the top surface and to form a cured extrusion on at least a portion of the side surface, the cured extrusion is thicker than the cured film, etching the top surface of the mesa to remove the first coating and the cured film from the top surface, and removing the cured extrusion to form the template with the first coating on the side surface.

A method of manufacturing a template including a mesa on a second side is disclosed. The method can include depositing a first coating on the second side, depositing a photocurable material over a top of the mesa, contacting the photocurable material with a second surface to cause the photocurable material to cover the top surface of the mesa and at least a portion of a side of the mesa, curing the photocurable material to form a cured film on the top surface and to form a cured extrusion on at least a portion of the side surface, the cured extrusion is thicker than the cured film, etching the top surface of the mesa to remove the first coating and the cured film from the top surface, and removing the cured extrusion to form the template with the first coating on the side surface.

A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.

Disclosed is a photomask comprising: a transparent substrate; and a multi-layer light shielding pattern film disposed on the transparent substrate, wherein the multi-layer light shielding pattern film comprises: a first light shielding film; and a second light shielding film disposed on the first light shielding film and comprising a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface roughness Wr of the measuring zone satisfies Equation 1 below:

0 nm<Wr−Wo≤3 nm  [Equation 1] where, in the Equation 1 above, Wo is a surface roughness of the measuring zone before soaking and washing processes, Wr is a surface roughness of the measuring zone after soaking in SC-1 (standard clean-1) solution and washing with ozone water, and the SC-1 solution comprises NH.sub.4OH, H.sub.2O.sub.2, and H.sub.2O.

A method of forming a pitch pattern is provided. The method includes forming two adjacent mandrels separated by a first distance, D1, on a substrate, and forming a first set of alternating sidewall spacers between the two adjacent mandrels. The method further includes removing the two adjacent mandrels, and forming a second set of alternating sidewall spacers and a third set of alternating sidewall spacers on opposite sides of the first set of sidewall spacers.

A method of forming a pitch pattern is provided. The method includes forming two adjacent mandrels separated by a first distance, D1, on a substrate, and forming a first set of alternating sidewall spacers between the two adjacent mandrels. The method further includes removing the two adjacent mandrels, and forming a second set of alternating sidewall spacers and a third set of alternating sidewall spacers on opposite sides of the first set of sidewall spacers.

Methods, a non-transitory computer-readable storage medium, devices, and a system in relation to training a convolutional neural network for deriving corrected digital pattern descriptions from digital pattern descriptions for use in a process for producing photomasks are disclosed. A reinforcement learning agent is trained to derive corrected digital pattern descriptions from respective digital pattern descriptions. The training is based on a first plurality of generated digital pattern descriptions and an obtained physical model using which predicted binary patterns of photomasks can be derived that would result from inputting digital pattern descriptions to the process for producing photomasks. A second plurality of digital pattern descriptions is then generated, and corresponding corrected digital pattern descriptions are generated using the trained reinforcement learning agent, thereby generating training data. The training data can be used to train a convolutional neural network to derive corrected digital pattern descriptions from digital pattern descriptions, the trained neural network can be used to derive a corrected digital pattern description, and the corrected digital pattern description can be used to produce a photomask according to the corrected digital pattern description.

Methods, a non-transitory computer-readable storage medium, devices, and a system in relation to training a convolutional neural network for deriving corrected digital pattern descriptions from digital pattern descriptions for use in a process for producing photomasks are disclosed. A reinforcement learning agent is trained to derive corrected digital pattern descriptions from respective digital pattern descriptions. The training is based on a first plurality of generated digital pattern descriptions and an obtained physical model using which predicted binary patterns of photomasks can be derived that would result from inputting digital pattern descriptions to the process for producing photomasks. A second plurality of digital pattern descriptions is then generated, and corresponding corrected digital pattern descriptions are generated using the trained reinforcement learning agent, thereby generating training data. The training data can be used to train a convolutional neural network to derive corrected digital pattern descriptions from digital pattern descriptions, the trained neural network can be used to derive a corrected digital pattern description, and the corrected digital pattern description can be used to produce a photomask according to the corrected digital pattern description.

The present disclosure provides a display substrate, a display device, a mask plate, and a manufacturing method. The manufacturing method includes forming a pattern structure on a base substrate including a first substrate portion and a second substrate portion adjacent to the first substrate portion, wherein the pattern structure is formed on the first substrate portion; forming a planarization layer on the base substrate, which includes a first planarization layer on the first substrate portion and a second planarization layer on the second substrate portion, wherein a projection of the first planarization layer on the base substrate at least partially covers that of the pattern structure on the base substrate; and removing a part of the first planarization layer to reduce a difference between a height of a surface of the first planarization layer and a height of a surface of the second planarization layer.