Systems and methods for custom photolithography masking via a precision dispense apparatus and process are disclosed. Methods include creating a toolpath instruction for depositing opaque onto a substrate, programming a precision dispense apparatus to execute the created toolpath instruction, and causing the precision dispense tool to deposit opaque material onto the substrate to form the photomask. The substrate may be an optically transparent plate or film or may be an electronic substrate where the opaque material is deposited directly onto a photoresist coating. Capabilities of the systems and methods disclosed herein extend to 3D substrates and custom photolithography masking, among others.

The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

A photomask blank having a substrate; and a multilayer film including a first layer, a second layer, and a third layer. The first layer contains 43 at % or less chromium, 32 at % or more oxygen, 25 at % or less nitrogen and 5 at % or more and 18 at % or less carbon and has a thickness of 8 nm or more and 16 nm or less. The second layer contains 66 at % or more and 92 at % or less chromium and 8 at % or more and 30 at % or less nitrogen and has a thickness of 50 nm or more and 75 nm or less. The third layer contains 44 at % or less chromium, 30 at % or more oxygen and 28 at % or less nitrogen and has a thickness of 10 nm or less. A surface roughness Rq of the multilayer film is 0.65 nm or less.

A photomask blank having a substrate; and a multilayer film including a first layer, a second layer, and a third layer. The first layer contains 43 at % or less chromium, 32 at % or more oxygen, 25 at % or less nitrogen and 5 at % or more and 18 at % or less carbon and has a thickness of 8 nm or more and 16 nm or less. The second layer contains 66 at % or more and 92 at % or less chromium and 8 at % or more and 30 at % or less nitrogen and has a thickness of 50 nm or more and 75 nm or less. The third layer contains 44 at % or less chromium, 30 at % or more oxygen and 28 at % or less nitrogen and has a thickness of 10 nm or less. A surface roughness Rq of the multilayer film is 0.65 nm or less.

The present application discloses a display panel, a manufacturing method of a display panel and a mask used thereof. The manufacturing method of the display panel comprises the following steps: doping a photo-initiator in photoresist for manufacturing photo spacers; coating the photoresist on the substrates to form photo spacers, and arranging a shade on the same layer; and respectively irradiating corresponding photo spacers by at least two types of light rays of different wavelengths, to control the photo-initiator so as to enable different photo spacers to have different shrinkages.

The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.

The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.

A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W.sub.1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material. ##STR00001##

A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W.sub.1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W.sub.2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material. ##STR00001##

Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.