The present disclosure provides masks suitable for Extreme Ultraviolet (EUV) and X-ray lithography by including a non-reflective region combined with a reflective multilayer. This non-reflective region replaces a typical absorber layer used to provide the pattern for integrated circuits.

A reflective mask blank has a substrate 10; a multilayer reflective film 20 that is provided on the substrate 10 and reflects exposure light; a protective film 50 including a metal oxide film 51 provided on the multilayer reflective film 20; and an absorber film 70 that is provided on the protective film 50 and absorbs exposure light. The multilayer reflective film 20 is configured such that a Mo layer and a Si layer are alternately stacked and a layer on a side farthest from the substrate 10 is the Si layer. The metal oxide film 51 is configured such that an oxygen content in a layer on a side far from the substrate 10 is higher than the oxygen content in a layer on a substrate side.

A reflective mask blank has a substrate 10; a multilayer reflective film 20 that is provided on the substrate 10 and reflects exposure light; a protective film 50 including a metal oxide film 51 provided on the multilayer reflective film 20; and an absorber film 70 that is provided on the protective film 50 and absorbs exposure light. The multilayer reflective film 20 is configured such that a Mo layer and a Si layer are alternately stacked and a layer on a side farthest from the substrate 10 is the Si layer. The metal oxide film 51 is configured such that an oxygen content in a layer on a side far from the substrate 10 is higher than the oxygen content in a layer on a substrate side.

A device having a color photo resist pattern includes a 3D substrate, at least one color photo resist layer and at least one circuit pattern layer. The at least one color photo resist layer is formed on said 3D substrate and forms a visual pattern together. The at least one circuit pattern layer is formed on said visual pattern formed by said at least one color photo resist layer.

Provided is a substrate with a multilayer reflective film capable of sufficiently reducing a reflectance of the multilayer reflective film with respect to EUV exposure light and preventing occurrence of a phenomenon in which a surface of a protective film on the multilayer reflective film swells and a phenomenon in which the protective film peels off.

A substrate with a multilayer reflective film 110 comprises a multilayer reflective film 5 and a protective film 6 in this order on a main surface of a substrate 1. The substrate 1 contains silicon, titanium, and oxygen as main components, and further contains hydrogen. The multilayer reflective film 5 has a structure in which a low refractive index layer and a high refractive index layer are alternately layered. The multilayer reflective film 5 comprises hydrogen. Hydrogen in the multilayer reflective film 5 has an atomic number density of 7.0×10.sup.−3 atoms/nm.sup.3 or less.

A substrate and a method for producing the same are disclosed herein. In some embodiments, a substrate includes a base layer, a black layer formed on the base layer, and column spacers formed on the black layer, wherein a loss rate of spacers measured by a peel test is 15% or less. The substrate can have excellent adhesiveness of the spacer to the base layer or the black layer and ensuring appropriate darkening properties. The method can effectively produce such a substrate without adverse effects such as occurrence of foreign materials without separate treatment such as heat treatment.

The present invention pertains to a method of manufacturing segregated layers above a substrate. The invention also pertains to methods of manufacturing a photoresist layer, photoresist patterns, a processed substrate and a device.

The present invention pertains to a method of manufacturing segregated layers above a substrate. The invention also pertains to methods of manufacturing a photoresist layer, photoresist patterns, a processed substrate and a device.

A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.

A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.