A manufacturing method for semiconductor device comprises the steps of: forming a ridge on the surface of an InP substrate; applying a photoresist to the surface of the InP substrate so as to cover the ridge; exposing through a mask an area of the photoresist covering part of an electrode contact layer at the top of the ridge, to form a resist pattern by development; applying a shrink material so as to cover resist pattern defects occurred when forming the resist pattern; forming a crosslinked portion in the defects to repair them by reacting the shrink material with an acid remaining at the exposed interface of the resist pattern; and removing by etching an electrode contact layer exposed from the resist pattern having the repaired defects after stripping away an unreacted shrink material, thereby to obtain a desired processed shape.

Provided are a coloring resin composition including a resin, a coloring material, and an organic solvent, in which the resin includes a resin A including a repeating unit (A) represented by Formula (a), where, in Formula (a), L.sup.a1 represents a trivalent group, Ar.sup.a1 represents an aromatic hydrocarbon group having a substituent, the substituent is a group having a structure in which a bonding portion with the aromatic hydrocarbon group is an ester bond or an amide bond, in the ester bond, an atom on a side different from an oxygen atom in the ester bond is on a side of the bonding portion with the aromatic hydrocarbon group, and in the amide bond, an atom on a side different from a nitrogen atom in the amide bond is on a side of the bonding portion with the aromatic hydrocarbon group; a film formed of the coloring resin composition; a color filter; a solid-state imaging element; and an image display device.

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A resist composition comprising a base polymer and an acid generator in the form of a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with a fluorinated cyclic group and a nitro group is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

Alternating copolymers having hydrocarbon-substituted terminal units and repeat units each containing two different monomer units with extreme ultraviolet (EUV)-absorbing elements are disclosed. Alternating copolymers having organic terminal units and repeat units each containing a monomer unit with an EUV-absorbing element and an organic monomer unit are also disclosed. A process of forming a polymer resist, which includes providing an alternating copolymer having repeat units with at least one EUV-absorbing monomer unit and replacing end groups of the alternating copolymer with unreactive terminal units, is disclosed as well.

A method for processing a substrate is described. The method includes forming a metal containing resist layer onto a substrate, patterning the metal containing resist layer, and performing a post exposure bake on the metal containing resist layer. The post exposure bake on the metal containing resist layer is a field guided post exposure bake operation and includes the use of an electric field to guide the ions or charged species within the metal containing resist layer. The field guided post exposure bake operation may be paired with a post development field guided bake operation.

A light-enhanced wafer processing system disclosed herein which includes a rotatable chuck configured to support and selectively rotate at least one wafer, at least one dispenser body configured to selectively flow at least one photolytic material onto a surface of the wafer, and at least one optical radiation source may be configured to provide optical radiation to at least a portion of the wafer having photolytic material applied thereto, wherein the optical radiation is configured to result in the formation of optically-induced radicals having enhanced reactivity with at least one material applied to the wafer.

A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

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An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

A resist composition comprising a base polymer and a sulfonium or iodonium salt of a fluorinated sulfonic acid having a phenylene group which is substituted with an iodized phenyl-containing group and a nitro group is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.