A positive-type photosensitive resin composition comprises a (a) polybenzoxazole precursor, a (b) crosslinking agent, a (c) photosensitive agent, and a (d) solvent, wherein the (a) polybenzoxazole precursor comprises a structure represented by Formula (1) below, and the (c) photosensitive agent is a compound comprising a structure represented by Formula (2) below. In Formula (1), U is a bivalent organic group, a single bond, —O—, or —SO.sub.2—, V is a group comprising an aliphatic structure, and the carbon number in the aliphatic structure is 1 to 30. ##STR00001##

A positive-type photosensitive resin composition comprises a (a) polybenzoxazole precursor, a (b) crosslinking agent, a (c) photosensitive agent, and a (d) solvent, wherein the (a) polybenzoxazole precursor comprises a structure represented by Formula (1) below, and the (c) photosensitive agent is a compound comprising a structure represented by Formula (2) below. In Formula (1), U is a bivalent organic group, a single bond, —O—, or —SO.sub.2—, V is a group comprising an aliphatic structure, and the carbon number in the aliphatic structure is 1 to 30. ##STR00001##

A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX.sub.3, A.sub.2BX.sub.4, or ABX.sub.4, wherein A is a compound containing an NH.sub.3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000.

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This can provide a silicone skeleton-containing polymer that can easily form a fine pattern with a large film thickness, and can form a cured material layer (cured film) that is excellent in various film properties such as crack resistance and adhesion properties to a substrate, electronic parts, and a semiconductor device, particularly a base material used for a circuit board, and has high reliability as a film to protect electric and electronic parts and a film for bonding substrates; and a photo-curable resin composition that contains the polymer, a photo-curable dry film thereof, a laminate using these materials, and a patterning process.

Compounds of the formula (I) and (IA) wherein X is —O(CO)—; R.sub.1 is C.sub.1-C.sub.12haloalkyl or C.sub.6-C.sub.10haloaryl; R.sub.2 is located in position 7 of the coumarinyl ring and is OR.sub.8; R.sub.2a, R.sub.2b and R.sub.2C independently of each other are hydrogen; R.sub.3 is C.sub.1-C.sub.8haloalkyl or C.sub.1-C.sub.8haloalkyl; R.sub.4 is hydrogen; and R.sub.8 is C.sub.1-C.sub.6alkyI; are suitable as photosensitive acid donors in the preparation of photoresist compositions such as used for example in the preparation of spacers, insulating layers, interlayer dielectric films, insulation layers, planarization layers, protecting layers, overcoat layers, banks for electroluminescence displays and liquid crystal displays (LCD).

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A resist composition including: a compound including an anion moiety and a cation moiety and represented by the following Formula (bd1); and an organic solvent having a hydroxyl group in which Rx.sup.1 to Rx.sup.4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Ry.sup.1 and Ry.sup.2 each independently represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Rz.sup.1 to Rz.sup.4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; at least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1 and Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anionic group; and M.sup.m+ represents an organic cation) ##STR00001##

A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having the formula (1) or an iodonium salt having the formula (2). ##STR00001##

A sulfonic acid derivative, wherein the sulfonic acid derivative is represented by the following general formula (1):

R.sup.1COOCH.sub.2CH.sub.2CFHCF.sub.2SO.sub.3.sup.−M.sup.+  (1)

where: R.sup.1 represents a monovalent organic group having carbon number of 1 to 200, having at least one hydroxyl group and optionally having a substituent other than the hydroxyl group; and M.sup.+ represents a counter cation.