Patent classifications
G03F7/004
RESIST MATERIAL AND PATTERNING PROCESS
The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.
RESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
A resist topcoat composition and a method of forming patterns using the resist topcoat composition. The resist topcoat composition includes an acrylic copolymer including a first structural unit represented by Chemical Formula M-1, and a second structural unit represented by Chemical Formula M-2; an acid compound; and a solvent
##STR00001##
IONIC SALT, RADIATION-SENSITIVE RESIST COMPOSITION COMPRISING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAME
An ionic salt includes a polyvalent ion (a) having a metal cluster structure or a metal oxide cluster structure and an organic ion (b), a radiation-sensitive resist composition including the ionic salt, and a pattern forming method, wherein the polyvalent ion (a) includes at least one metal atom selected from the group consisting of tin, indium, antimony, tellurium, and bismuth, and the organic ion (b) is at least one selected from the group consisting of: a carboxylate anion having 4 or more carbon atoms; a sulfonate anion having 4 or more carbon atoms; a phosphonate anion having 4 or more carbon atoms; a phenoxide anion having 6 or more carbon atoms; an iodonium cation having 4 or more carbon atoms; a sulfonium cation having 4 or more carbon atoms; an ammonium cation having 4 or more carbon atoms; and a pyridinium cation having 5 or more carbon atoms.
PHOTORESIST COMPOSITION AND METHODS OF USE
Novel photoresist additive compositions including developer solubility groups which enhance the solubility of the photoresist additive in a developer, such as a TMAH developer. The novel photoresist additive compositions also include functional groups to address outgassing and out-of-band issues.
RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN
A radiation-sensitive resin composition includes: a polymer which has a first structural unit including a phenolic hydroxyl group, and a second structural unit represented by formula (1); and a radiation-sensitive acid generating agent which has a compound represented by formula (2). R.sup.1 represents a hydrogen atom, or the like; R.sup.2 represents a hydrogen atom or the like; and R.sup.3 represents a divalent monocyclic alicyclic hydrocarbon group having 3 to 12 ring atoms. Ar.sup.1 represents a group obtained by removing (q+1) hydrogen atoms on an aromatic ring from an arene formed by condensation of at least two benzene rings; R.sup.4 represents a monovalent organic group having 1 to 20 carbon atoms; q is an integer of 0 to 7; and R.sup.5 represents a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms, or the like.
##STR00001##
SURFACE MODIFICATION FOR METAL-CONTAINING PHOTORESIST DEPOSITION
Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.
PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT THEREOF, AND WIRING STRUCTURE CONTAINING CURED PRODUCT
There are provided a photosensitive resin composition, a cured product thereof, and a wiring structure body, an electronic component, a semiconductor device, and a camera module each including the cured product. This photosensitive resin composition is cured by irradiation with active energy rays, instead of by heat treatment at high temperatures. In this photosensitive resin composition, film loss after a development process is restrained. Furthermore, a miniaturized pattern can be accurately formed by photolithography. An aspect of the present invention is a photosensitive resin composition including components (A) to (C): (A) a modified polyphenylene ether represented by formula (1) and formula (2), (B) a silsesquioxane compound represented by formula (3), and (C) a photopolymerization initiator, a cured product thereof, and a wiring structure body, an electronic component, a semiconductor device, and a camera module each including the cured product.
CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE
A chemically amplified photosensitive composition capable of forming a template for plating which can form a plated article with uniform dimensions by photolithography method; a photosensitive dry film including a photosensitive layer consisting of this chemically amplified photosensitive composition; a production method of a substrate having a template for plating using the aforementioned chemically amplified photosensitive composition; and a production method of a plated article using the substrate having the template formed by the aforementioned method. A coumarin compound is blended into a chemically amplified photosensitive composition containing an acid generator which generates an acid by irradiation of active rays or radioactive rays.
CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE
A chemically amplified photosensitive composition capable of forming a template for plating which can form a plated article with uniform dimensions by photolithography method; a photosensitive dry film including a photosensitive layer consisting of this chemically amplified photosensitive composition; a production method of a substrate having a template for plating using the aforementioned chemically amplified photosensitive composition; and a production method of a plated article using the substrate having the template formed by the aforementioned method. A coumarin compound is blended into a chemically amplified photosensitive composition containing an acid generator which generates an acid by irradiation of active rays or radioactive rays.
Radiation sensitive composition
A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1)
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4-(a+b) Formula (1)
wherein R.sup.1 is an organic group of Formula (1-2) ##STR00001##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.3 is a hydrolyzable group; and Formula (2)
R.sup.7.sub.cR.sup.8.sub.dSi(R.sup.9).sub.4-(c+d) Formula (2)
wherein R.sup.7 is an organic group of Formula (2-1) ##STR00002##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.9 is a hydrolyzable group.