G03F7/20

Method and apparatus for improving critical dimension variation

A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Negative type photosensitive composition comprising black colorant

[Problem] To provide a negative type photosensitive composition which is capable of forming a cured film having high resolution and high light shielding properties. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin, (II) a black colorant, (III) a polymerization initiator, and (IV) a solvent, wherein the black colorant (II) has a transmittance ratio represented by [transmittance at the wavelength of 365 nm]/[transmittance at the wavelength of 500 nm] of 1.2 more.

Negative type photosensitive composition comprising black colorant

[Problem] To provide a negative type photosensitive composition which is capable of forming a cured film having high resolution and high light shielding properties. [Means for Solution] A negative type photosensitive composition comprising (I) an alkali-soluble resin, (II) a black colorant, (III) a polymerization initiator, and (IV) a solvent, wherein the black colorant (II) has a transmittance ratio represented by [transmittance at the wavelength of 365 nm]/[transmittance at the wavelength of 500 nm] of 1.2 more.

Method of determining the contribution of a processing apparatus to a substrate parameter
11579535 · 2023-02-14 · ·

A method for determining a contribution of a processing apparatus to a fingerprint of a parameter across a substrate, the method including: obtaining a delta image which relates to a difference between a first pupil image associated with inspection of a first feature on the substrate and a second pupil image associated with inspection of a second feature on the substrate, wherein the first and second features have different dose sensitivities; determining a rate of change of the difference in response to a variation of a dose used to form the first and second features; selecting a plurality of pixels within the delta image having a rate of change above a predetermined threshold; and determining the contribution using the determined rate of change and the delta image restricted to the plurality of pixels.

METHOD FOR CORRECTING MEASUREMENTS IN THE MANUFACTURE OF INTEGRATED CIRCUITS AND ASSOCIATED APPARATUSES

Disclosed is a method of metrology. The method comprises illuminating a radiation onto a substrate; obtaining measurement data relating to at least one measurement of each of one or more structures on the substrate; using a Fourier-related transform to transform the measurement data into a transformed measurement data; and extracting a feature of the substrate from the transformed measurement data, or eliminating an impact of a nuisance parameter.

METHOD FOR OPERATING AN EUV LITHOGRAPHTY APPARATUS, AND EUV LITHOGRAPHY APPARATUS
20230041588 · 2023-02-09 ·

A method for operating an EUV lithography apparatus (1) with at least one vacuum housing (27) for at least one reflective optical element (12) includes operating the EUV lithography apparatus in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing, wherein a reducing plasma is generated at a surface (12a) of the reflective optical element in response to an interaction of the EUV radiation with a residual gas present in the vacuum housing. After an exposure pause, in which no EUV radiation is radiated into the vacuum housing, and before renewed operation of the EUV lithography apparatus in the exposure operating mode (B), the EUV lithography apparatus is operated in a recovery operating mode, in which oxidized contaminants at the surface of the reflective optical element are reduced in order to recover a transmission of the EUV lithography apparatus before the exposure pause.

DATA INSPECTION FOR DIGITAL LITHOGRAPHY FOR HVM USING OFFLINE AND INLINE APPROACH
20230042334 · 2023-02-09 ·

In embodiments of a digital lithography system, physical design data prepared at a data prep server in a hierarchical data structure. A leaf node comprises a repeater nod, comprising a bitmap image and a plurality of locations at which the bitmap appears in a physical design. At an EYE server, a repeater node bitmap is adjusted based upon, for example, spatial light modulator rotational adjustment and substrate distortion. The adjusted repeater node and the plurality of locations in which the adjusted repeater appears is compared to the repeater of the data prep server and its plurality of locations. In further embodiments, a rasterizer generates a checksum of bitmap to be printed to a substrate, from the EYE server bitmap. The checksum is compared to a checksum of the EYE server bitmap.

PHOTORESIST INSPECTION APPARATUS, PHOTORESIST INSPECTION METHOD USING THE SAME, AND ELECTRON BEAM EXPOSURE APPARATUS

According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

CONTROLLING POROSITY OF AN INTERFERENCE LITHOGRAPHY PROCESS BY FINE TUNING EXPOSURE TIME

A method to control the density of a three-dimensional photonic crystal template involves changing the irradiation time from at least four laser beams to yield a periodic percolating matrix of mass and voids free of condensed matter from a photoresist composition. The photoresist composition includes a photoinitiator at a concentration where the dose or irradiation is controlled by the irradiation time and is less than the irradiation time that would convert all photoinitiator to initiating species such that the density of the three-dimensional photonic crystal template differs for different irradiation times. A deposition of reflecting or absorbing particles can be patterned on the surface of the photoresist composition to form a template with varying densities above different areas of the substrate.

MULTIPLE CAMERA APPARATUS FOR PHOTOLITHOGRAPHIC PROCESSING
20230043353 · 2023-02-09 ·

Embodiments of a photolithographic machine with two or more camera systems (i.e., projection lens systems) are described herein. The photolithographic machine may include two or more cameras independently operated and controlled for exposing integrated circuit, flat panel display, and other substrates used in manufacturing semiconductor electronics. The cameras may be independently controlled to move laterally in the x-axis (i.e., not fixed). The independent control can include movement, focusing, tilt, reticle position, among other things.