Computer-aided methods for simulating confined nanodevices are disclosed. In example implementations, atomic-scale model of the nanodevices are generated so that dimensions and materials are specified. Then, band structures which comprise wave functions and Eigen energies are calculated using First Principles Methods (FPM). Effective mass modeled which comprise wave functions and Eigen energies are generated. After that, spatial wave functions of the calculated FPM band structures are mapped to the generated effective mass band structures wave functions by considering global behavior. In response to the mapping, generated effective mass models are fitted to calculated FPM energies so that approximate electronic band structures of the confined nanodevices are modeled. Computer programs for carrying out the methods, data media and computer systems are also disclosed.

An integrated circuit design tool includes a cell library. The cell library includes entries for a plurality of cells, entries in the cell library including specifications of particular cells in a computer executable language. At least one entry in the cell library can comprise a specification of physical structures and timing parameters of a circuit including a first transistor, a second transistor, and an interconnect connecting a terminal of the first transistor to a terminal of the second transistor, the interconnect comprising one or more nanowires or 2D material strips arranged in parallel. An integrated circuit including the circuit is described.

In one aspect, a CAD-based method for designing a lithographic mask for nanowire-based devices is provided which includes the steps of: create a design for the mask from existing (e.g., FINFET or planar CMOS) design data which includes, for each of the devices, one or more nanowire mask shapes (FINFET design data) or continuous shapes (planar CMOS design data); for FINFET design data, merging the nanowire mask shapes into continuous shapes; expanding the continuous shapes to join all of the continuous shapes in the design together forming a single polygon shape; removing the continuous shapes from the single polygon shape resulting in landing pad shapes for anchoring the nanowire mask shapes; for CMOS design data, dividing the continuous active shapes into one or more nanowire mask shapes; and merging the landing pad shapes with the nanowire mask shapes to form the lithographic mask.

In some embodiments, an apparatus and a system, as well as a method and article, may operate to model electromagnetic data to provide modeled electromagnetic data by solving a first set of surface integral equations that include earth model parameters corresponding to an earth model of a geological formation. Additional activity may include publishing at least some of the modeled electromagnetic data in human-readable form, and/or controlling drilling operations in the geological formation based on the earth model when error between the modeled electromagnetic data and measured electromagnetic data is less than a selected threshold. Additional apparatus, systems, and methods are disclosed.

Image sensing devices including meta lenses and methods for manufacturing the image sensing devices are disclosed. In an embodiments, an image sensing device includes a plurality of microlenses including first to fourth microlenses arranged in a (22) matrix structure, a plurality of optical filters disposed under the first to fourth microlens, and configured to correspond to the first to fourth microlenses, one microlens per optical filter, respectively, and an optical element disposed at a center of the (22) matrix structure among the first to fourth microlenses and configured to separate incident light into light rays of in different wavelength ranges of different colors to guide each of the light rays to one of the plurality of optical filters of a corresponding color.

One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout diagram. The first nano-sheet structure has a first width. The method includes abutting a second nano-sheet structure with the first nano-sheet structure. The second nano-sheet structure has a second width. The second width is less than the first width. The method includes generating and storing the IC layout diagram in a storage device.

Methods and systems for calibrating a transport gap protocol (TGP) for a device design are described. An example method includes obtaining a non-local conductance threshold by identifying those topological regions of interest (ROIs) for the device design that have an optimized amount of overlap with a topological index associated with the device design. The method further includes thresholding a thermal conductance to obtain both: (1) an estimated topological gap for the device design, and (2) optimal topological ROIs for the device design. The method further includes using a processor, based on the obtained estimated topological gap and the obtained optimal topological ROIs, extracting a topological gap for calibrating the TGP for the device design.

A polymer that is degradable and contains an acetyl group and a saccharide group. The acetyl group and the saccharide group are bonded to each other through an ester bond. Also provided is a method of preparing the polymer.

The patent presents a machine learning technique to determine the crystal phase distribution of polycrystalline thin films in nanodevices. It involves adjusting simulation parameters of transmission electron microscope software to generate a database of simulation images. A dedicated convolutional neural network is then built based on specific crystallographic parameters. This network is trained on the image dataset obtained. Once trained, it analyzes transmission electron microscope images of grains within actual thin films to swiftly and accurately identify crystal phase distribution. This innovation replaces manual methods, enabling automatic and reliable identification of crystal phase distribution in real polycrystalline thin films.

A data storage system and method are provided, as well as systems and methods for fabrication, and writing and reading of data therein. The data storage system includes at least one population of molecular sequences including chains of basic molecular building-blocks, and defining at least one respective data-block encoding data in the data storage system. The data of the data-block is encoded in a sequence S=(.sup.1, .sup.2, . . . , .sup.k . . . , .sup.K-1, .sup.K) of encoded letters {.sup.k} associated with an alphabet {.sub.m}|.sub.m=1 to M, which are encoded according to the types of basic molecular building-blocks appearing at k respective location along storage segments of the molecular sequences of the population. The molecular sequences include a number Z of different types of basic molecular building-blocks {E.sup.n}|.sub.n=1 to Z, while the alphabet has a size M strictly greater than the number Z of types of building-blocks. Each alphabet letter .sub.m is associated with a vector {P.sub.m.sup.n}|.sub.n=1 to Z indicative of occurrences of basic molecular building-block E.sup.n of type n in the alphabet letter .sub.m. Accordingly each encoded letter .sup.k at location k in the storage segments of molecular sequences of the data-block/population, is mapped to a corresponding alphabet letter .sub.m by determining a match between the occurrence of basic molecular building-blocks of different types at that locations k of the molecular sequences of the population, with the vector {P.sub.m.sup.n}|.sub.n=1 to Z associated with the alphabet letter .sub.m. In some implementations the component P.sub.m.sup.n of the vector {P.sub.m.sup.n}.sub.m|n=1 to Z associated with alphabet letter .sub.m is indicative of a probability that a basic molecular building-block E.sup.n of type n, 1nZ, appears at the location k of the storage segment of a molecular strand of the at least one population in case the letter .sup.k encoded at that location k corresponds to the alphabet letter .sub.m.