A processing-in-memory includes: a memory; a register configured to store offset information; and an internal processor configured to: receive an instruction and a reference physical address of the memory from a memory controller, determine an offset physical address of the memory based on the offset information, determine a target physical address of the memory based on the reference physical address and the offset physical address, and perform the instruction by accessing the target physical address.

This document describes apparatuses and techniques for cache memory with randomized eviction. In various aspects, a cache memory randomly selects a cache line for eviction and/or replacement. The cache memory may also support multi-occupancy whereby the cache memory enters data reused from another cache line to replace the data of the randomly evicted cache line. By so doing, the cache memory may operate in a nondeterministic fashion, which may increase a probability of data remaining in the cache memory for subsequent requests.

This document describes apparatuses and techniques for cache memory with randomized eviction. In various aspects, a cache memory randomly selects a cache line for eviction and/or replacement. The cache memory may also support multi-occupancy whereby the cache memory enters data reused from another cache line to replace the data of the randomly evicted cache line. By so doing, the cache memory may operate in a nondeterministic fashion, which may increase a probability of data remaining in the cache memory for subsequent requests.

An integrated circuit (IC) package includes a storage element and a protection component coupled to the storage element. The protection component includes a breach detection component configured to detect an attempted breach of the IC package. The protection component further includes a time detection component configured to determine a breach timestamp associated with a time of occurrence of the attempted breach and configured to store a representation of the breach timestamp in the storage element. The storage element may be configured to store a sensitive datum, and the time detection component may be configured to store the representation of the breach timestamp by overwriting the sensitive datum in the storage element with the representation of the breach timestamp.

A storage device communicates with a host including a host memory. The storage device includes a semiconductor memory device and a device memory. The semiconductor memory device includes a plurality of non-volatile memory cells. The device memory stores validity information of host performance booster (HPB) sub-regions included in each of HPB regions cached in the host memory. The storage device determines to deactivate at least one HPB region among the HPB regions cached in the host memory based on the validity information included in the device memory, and transfers a message recommending to deactivate the determined HPB region to the host.

An operating method of a storage device and a nonvolatile memory device determine whether a nonvolatile memory device performs a program operation on at least one of a plurality of pages. Either a program time stamp table, managed with program elapsed times of the plurality of pages, or an update count of the program time stamp table is updated, based on the determination result.

Methods, systems, and devices related to page policies for signal development caching in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory device may be configured to receive a read command for data stored in the memory array and transfer the data from the memory array to the signal development cache. The memory device may be configured to sense the data using an array of sense amplifiers. The memory device may be configured to write the data from the signal development cache back to the memory array based on one or more policies.

An electronic device with embedded access to a high-bandwidth, high-capacity fast-access memory includes (a) a memory circuit fabricated on a first semiconductor die, wherein the memory circuit includes numerous modular memory units, each modular memory unit having (i) a three-dimensional array of storage transistors, and (ii) a group of conductors exposed to a surface of the first semiconductor die, the group of conductors being configured for communicating control, address and data signals associated the memory unit; and (b) a logic circuit fabricated on a second semiconductor die, wherein the logic circuit also includes conductors each exposed at a surface of the second semiconductor die, wherein the first and second semiconductor dies are wafer-bonded, such that the conductors exposed at the surface of the first semiconductor die are each electrically connected to a corresponding one of the conductors exposed to the surface of the second semiconductor die. The three-dimensional array of storage transistors may be formed by NOR memory strings.

A memory controller includes a state shaping encoder that receives k-bit write data, selects a logical page with reference to state shape mapping information, and changes data of the logical page to decrease an occurrence probability of a high-order program state among program states used to program the k-bit data in multi-level memory cells.

An erase method of a nonvolatile memory device is provided which includes receiving an erase request; selecting an erase mode of a memory block corresponding to the erase request, based on an access condition of the nonvolatile memory device managed by a memory controller; and controlling the nonvolatile memory device to erase the memory block according to the selected erase mode. The erase mode includes a fast erase mode of which an erase time for the memory block is shorter than a reference time and a slow erase mode of which an erase time for the memory block is longer than the reference time.