The present application provides a GOA circuit and a display panel. In the GOA circuit, one of two GOA units of a same stage in GOA sub circuits at left and right sides of the display panel is deployed only with an all-on module and the other one of the two GOA units is deployed only with an all-off module. In such a way, both the number of the all-on modules and the number of the all-off modules required in the GOA unit are halved, thereby reducing the area occupied by the GOA circuit. It is beneficial for realizing a display panel with a narrow bezel.

A novel semiconductor device or a highly reliable semiconductor device is provided. The on/off state of a transistor which functions as a switch for writing data is controlled using the potential of a potential hold portion. The potential of the potential hold portion is controlled using a plurality of capacitors, whereby both a positive potential and a negative potential can be held in the potential hold portion. Accordingly, deterioration of the transistor which functions as the switch for writing data can be prevented and the characteristics of the transistor can be maintained. Therefore, the highly reliable semiconductor device can be provided.

A method of displaying an image by using a display device. The method includes: grouping pixels included in a display unit into pixel blocks, generating a first accumulated stress map representing a degree of a deteriorated performance of the pixels included in the pixel blocks based on first image data of a current frame image, and determining a shiftable range of the current frame image by analyzing the first accumulated stress map. The first image data is corrected to second image data in which the current frame image is shifted within the shiftable range.

The present disclosure provides an LED display device. The LED display device divides each of LED modules into a plurality of unit blocks. In each of the unit blocks, a display controller transmits image data to be processed in parallel to the corresponding data driver at the same time, and transmits logic signals to the corresponding gate driver, thereby driving the corresponding data driver and then turning on the corresponding LEDs. Therefore, the speed processing the image data of each unit block can be improved, to enhance the visual refresh rate.

A method for charging a pixel and an enlarged pixel of the display device and a display device are provided. The enlarged pixel has a storage capacitance greater than a storage capacitance of the pixel, and the method includes charging the enlarged pixel in a greater amount of time than charging the pixel. Therefore, according to the display device of the disclosure, an image sensing unit may be configured under the enlarged pixel so as to implement an image sense function under a screen.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A light emitting element includes a first electrode, a second electrode, and a light emission layer interposed between the first electrode and the second electrode, where an emission efficiency of the light emission layer varies based on a voltage applied to at least one selected from the first electrode and the second electrode.

The present disclosure relates to a signal processing device and an image display apparatus including the same. A signal processing device according to an embodiment of the present disclosure includes: an input interface to receive an image signal; a first image processor to generate first image frame data based on the image signal; a second image processor to generate second image frame data scaled down from the first image frame data based on the image signal; and an output interface to receive the first image frame data from the first image processor and the second image frame data from the second image processor and to output the first image frame data and the second image frame data, wherein the first image frame data output from the output interface is more delayed than the second image frame data output from the output interface. Accordingly, a timing controller may accurately and rapidly perform signal processing for a panel.

Methods and apparatuses relating to controlling an emission of a display panel. In one embodiment, a display driver hardware circuit includes row selection logic to select a number of rows in an emission group of a display panel, wherein the number of rows is adjustable from a single row to a full panel of the display panel, column selection logic to select a number of columns in the emission group of the display panel, wherein the number of columns is adjustable from a single column to the full panel of the display panel, and emission logic to select a number of pulses per data frame to be displayed, wherein the number of pulses per data frame is adjustable from one to a plurality and a pulse length is adjustable from a continuous duty cycle to a non-continuous duty cycle.

A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of onion of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/μm (1×10.sup.−18 A/μm) or less. Therefore, the drive capability of the semiconductor device can be improved.