The present disclosure relates to an integrated chip. The integrated chip includes a lower electrode disposed within a dielectric structure over a substrate. A ferroelectric data storage structure is disposed over the lower electrode and an upper electrode is disposed over the ferroelectric data storage structure. One or more stressed sidewall spacers are arranged on opposing sides of the upper electrode. The ferroelectric data storage structure has an orthorhombic phase concentration that varies from directly below the one or more stressed sidewall spacers to laterally outside of the one or more stressed sidewall spacers.

The present disclosure relates to an integrated chip. The integrated chip includes a lower electrode disposed within a dielectric structure over a substrate. A ferroelectric data storage structure is disposed over the lower electrode and an upper electrode is disposed over the ferroelectric data storage structure. One or more stressed sidewall spacers are arranged on opposing sides of the upper electrode. The ferroelectric data storage structure has an orthorhombic phase concentration that varies from directly below the one or more stressed sidewall spacers to laterally outside of the one or more stressed sidewall spacers.

A circular memory device includes a plurality of bottom electrodes, a plurality of top electrodes, a ferroelectric layer, and a plurality of memory storage locations within the ferroelectric layer at a crossover point of each of the bottom electrodes and each top electrode. Contact pads of the bottom electrodes and top electrodes may include a perimeter that defines an annular sector that allows a memory operation to be performed on the circular memory device across a range of rotational positions. In an example implementation, the memory operation may be performed on the circular memory device regardless of the rotational orientation of the circular memory device relative to a reader.

Microwave AC conductivity may be improved or tuned in a material, for example, a dielectric or semiconductor material, by manipulating domain wall morphology in the material. Domain walls may be created, erased or reconfigured to control the AC conductivity, for example, for crafting circuit elements. The density and placement of domain walls may increase or decrease the AC conductivity and may control AC conduction pathways through the material. An electric potential applied to the material's surface may create a desired pattern of domain walls to meet desired AC conductivity criteria. Incline angle of the domain walls may be modified relative to a crystallographic axis of the material to temporarily or permanently modify or gate AC conductivity of the material. For example, the AC conductivity of the material may be gated by domain wall incline angle to increase, decrease or throttle current flowing through the material for an electronic circuit element.

A dielectric reproducing device and a dielectric recording and reproducing device that can improve the reproduction speed. A detection means is provided so as to be able to detect a polarization state of each bit 1a corresponding to the data recorded in a data recording layer by relatively scanning the data recording layer made of a dielectric material. A heating means is provided so as to be able to heat the bit to be detected to a predetermined temperature while the detection means detects the polarization state. A reproducing means is provided so as to be able to reproduce the data based on the polarization state of each bit detected by the detection means.

A dielectric reproducing device and a dielectric recording and reproducing device that can improve the reproduction speed. A detection means is provided so as to be able to detect a polarization state of each bit 1a corresponding to the data recorded in a data recording layer by relatively scanning the data recording layer made of a dielectric material. A heating means is provided so as to be able to heat the bit to be detected to a predetermined temperature while the detection means detects the polarization state. A reproducing means is provided so as to be able to reproduce the data based on the polarization state of each bit detected by the detection means.

A ferroelectric storage apparatus includes: a ferroelectric recording medium; a conductive probe configured to write information to and read information from the ferroelectric recording medium; a probe slider configured to cause the conductive probe to travel by floating above a surface of the ferroelectric recording medium; a ferroelectric recording medium driver configured to rotate the ferroelectric recording medium; and a recording-and-reproduction signal processor configured to process a write signal and a read signal of information transmitted to and received from the conductive probe. The conductive probe includes: a base body constituted by a conductive material; an insulating layer formed on the base body and includes a through hole: and a needle-shaped electrode formed in a cone shape on the base body in the through hole. A portion of the needle-shaped electrode protrudes from a surface of the insulating layer.

A ferroelectric storage apparatus includes: a ferroelectric recording medium; a conductive probe configured to write information to and read information from the ferroelectric recording medium; a probe slider configured to cause the conductive probe to travel by floating above a surface of the ferroelectric recording medium; a ferroelectric recording medium driver configured to rotate the ferroelectric recording medium; and a recording-and-reproduction signal processor configured to process a write signal and a read signal of information transmitted to and received from the conductive probe. The conductive probe includes: a base body constituted by a conductive material; an insulating layer formed on the base body and includes a through hole: and a needle-shaped electrode formed in a cone shape on the base body in the through hole. A portion of the needle-shaped electrode protrudes from a surface of the insulating layer.

A dielectric reproducing device and a dielectric recording and reproducing device that can improve the reproduction speed. A detection means is provided so as to be able to detect a polarization state of each bit 1a corresponding to the data recorded in a data recording layer by relatively scanning the data recording layer made of a dielectric material. A heating means is provided so as to be able to heat the bit to be detected to a predetermined temperature while the detection means detects the polarization state. A reproducing means is provided so as to be able to reproduce the data based on the polarization state of each bit detected by the detection means.

A dielectric reproducing device and a dielectric recording and reproducing device that can improve the reproduction speed. A detection means is provided so as to be able to detect a polarization state of each bit 1a corresponding to the data recorded in a data recording layer by relatively scanning the data recording layer made of a dielectric material. A heating means is provided so as to be able to heat the bit to be detected to a predetermined temperature while the detection means detects the polarization state. A reproducing means is provided so as to be able to reproduce the data based on the polarization state of each bit detected by the detection means.