The present disclosure provides a storage device, including: at least one first storage region, at least one drive module, and at least one amplification module. The drive module is arranged on both sides of each of the first storage regions in a word line direction, and the amplification module is arranged on both sides of each of the first storage regions in a bit line direction. Each of the first storage regions includes at least one hybrid storage block arranged side by side in the word line direction and configured to store data and an on die error correcting code (OD-ECC).

Abstract of Disclosure A memory array includes at least one strap region, at least two sub-arrays, a plurality of staggered, dummy magnetic storage elements, and a plurality of bit line structures. The strap region includes a plurality of source line straps and a plurality of word line straps. The two sub-arrays include a plurality of staggered, active magnetic storage elements. The two sub -arrays are separated by the strap region. The staggered, dummy magnetic storage elements are disposed within the strap region. The bit line structures are disposed in the two sub-arrays, and each of the bit line structures is disposed above and directly connected with at least one of the staggered, active magnetic storage elements.

Abstract of Disclosure A memory array includes at least one strap region, at least two sub-arrays, a plurality of staggered, dummy magnetic storage elements, and a plurality of bit line structures. The strap region includes a plurality of source line straps and a plurality of word line straps. The two sub-arrays include a plurality of staggered, active magnetic storage elements. The two sub -arrays are separated by the strap region. The staggered, dummy magnetic storage elements are disposed within the strap region. The bit line structures are disposed in the two sub-arrays, and each of the bit line structures is disposed above and directly connected with at least one of the staggered, active magnetic storage elements.

According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

A microelectronic device comprises a memory array region, a control logic region underlying the memory array region, and an interconnect region vertically interposed between the memory array region and the control logic region. The memory array region comprises a stack structure comprising vertically alternating conductive structures and insulating structures; vertically extending strings of memory cells within the stack structure; at least one source structure vertically overlying the stack structure and coupled to the vertically extending strings of memory cells; and digit line structures vertically underlying the stack structure and coupled to the vertically extending strings of memory cells. The control logic region comprises control logic devices for the vertically extending strings of memory cells. The interconnect region comprises structures coupling the digit line structures to the control logic devices. Methods of forming a microelectronic device, and memory devices and electronic systems are also described.

A semiconductor storage device according to an embodiment includes a substrate, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip includes a first surface contacting with the substrate, a second surface on an opposite side to the first surface, and a first pad provided on the second surface. The second semiconductor chip includes a third surface contacting with the second surface, a fourth surface on an opposite side to the third surface, and a cutout portion. The cutout portion is provided at a corner portion where the third surface crosses a lateral surface between the third surface and the fourth surface. The cutout portion overlaps with at least a part of the first pad as viewed from above the fourth surface.

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, first memory opening fill structures extending through the alternating stack and including a respective first vertical semiconductor channel having a tubular section and a semi-tubular section, second memory opening fill structures, first bit lines electrically connected to a respective subset of the first drain regions, second bit lines electrically connected to a respective subset of the second drain regions, and an erase voltage application circuit configured to electrically bias the first bit lines at a first bit line erase voltage and the second bit lines at a second bit line erase voltage during an erase operation. The first bit line erase voltage is greater than the second bit line erase voltage.

A load control device may include a semiconductor switch, a control circuit, and first and second terminals adapted to be coupled to a remote device. The load control device may include a first switching circuit coupled to the second terminal, and a second switching circuit coupled between the first terminal and the second terminal. The control circuit may be configured to render the first switching circuit conductive to conduct a charging current from an AC power source to a power supply of the remote device during a first time period of a half-cycle of the AC power source, and further configured to render the first and second switching circuits conductive and non-conductive to communicate with the remote device via the second terminal during a second time period of the half-cycle of the AC power source.

A microelectronic device comprises a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. The stack structure comprises a first block structure comprising stair step structures spaced from each other by crest regions, the stair step structures each comprising steps defined at horizontal edges of the tiers of the conductive structures and the insulative structures, and a second block structure horizontally neighboring the first block structure and comprising additional stair step structures spaced from one another by additional crest regions, the additional stair step structures horizontally offset from the stair step structures of the first block structure, and a slot structure extending though the stack structure and interposed between the first block structure and the second block structure. Related microelectronic devices, electronic systems, and methods are also described.