Methods, systems, and devices for power regulation for memory systems are described. In one example, a memory system, such as a memory module, may include a substrate, and an input/output component coupled with the substrate and operable to communicate signals with a host system. The memory system may also include one or more memory devices coupled with the substrate and the input/output component and operable to store data for the host system. A memory device of the one or more memory devices may include a power management component in its package with one or more memory dies. The power management component may be coupled with the one or more memory dies, and feedback component, and may be operable to provide one or more supply voltages for the one or more memory dies based on one or more voltages associated with the memory system.

Methods, systems, and devices for power regulation for memory systems are described. In one example, a memory system, such as a memory module, may include a substrate, and an input/output component coupled with the substrate and operable to communicate signals with a host system. The memory system may also include one or more memory devices coupled with the substrate and the input/output component and operable to store data for the host system. A memory device of the one or more memory devices may include a power management component in its package with one or more memory dies. The power management component may be coupled with the one or more memory dies, and feedback component, and may be operable to provide one or more supply voltages for the one or more memory dies based on one or more voltages associated with the memory system.

Techniques for providing temperature trim codes to multiple reference circuits of an integrated circuit are provided. In an example, a string of primary latch circuits can provide a set of pre-defined temperature trim codes to a multiplexer in response to a token of a series of tokens. The multiplexer can provide two trim of the trim codes to an interpolator based on a temperature reading of the integrated circuit. The interpolator can provide an interpolated trim code and the trim code can be distributed to a reference circuit based on the token.

A memory is provided that includes a write multiplexer, which multiplexes among a plurality of bit line columns. The multiplexer includes a positive boost circuit that applies a positive boost to a voltage at the gates of transistors to strengthen an on state of those transistors. The positive boosting may be in addition to, or instead of, negative boosting at a write driver circuit.

A memory is provided that includes a write multiplexer, which multiplexes among a plurality of bit line columns. The multiplexer includes a positive boost circuit that applies a positive boost to a voltage at the gates of transistors to strengthen an on state of those transistors. The positive boosting may be in addition to, or instead of, negative boosting at a write driver circuit.

Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.

Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.

A memory system includes a connector through which power for the memory system is to be supplied from an external device, a controller, a nonvolatile memory device, a power source circuit connected to the controller and the nonvolatile memory device by power lines through which power is supplied to the controller and the nonvolatile memory device, and a power source control circuit that receives a supply of power from the external device through the connector and supplies the power to the power control circuit. The power source control circuit is configured to detect using a divided voltage of a voltage of the power supplied thereto, that the voltage of the power supplied thereto is higher than a predetermined voltage and interrupt the power supplied to the power control circuit if the voltage of the power supplied thereto is higher than the predetermined voltage.

According to one embodiment, a memory system includes a first plate, an intermediate member, and a substrate. The intermediate member includes a second plate and a pair of side walls. The second plate includes a first opening, and is arranged to have a gap with respect to the first plate. The second plate includes a first face facing the first plate and a second face located on a side opposite to the first face. The pair of side walls is arranged on the second face. The substrate is placed between the pair of side walls. The substrate includes a third face on which a first non-volatile memory package and a controller package are mounted. The third face faces the second plate. The first non-volatile memory package is thermally connected to the second plate. The controller package is thermally connected to the first plate through the first opening.

According to one embodiment, a memory system includes a first plate, an intermediate member, and a substrate. The intermediate member includes a second plate and a pair of side walls. The second plate includes a first opening, and is arranged to have a gap with respect to the first plate. The second plate includes a first face facing the first plate and a second face located on a side opposite to the first face. The pair of side walls is arranged on the second face. The substrate is placed between the pair of side walls. The substrate includes a third face on which a first non-volatile memory package and a controller package are mounted. The third face faces the second plate. The first non-volatile memory package is thermally connected to the second plate. The controller package is thermally connected to the first plate through the first opening.