A reference voltage training circuit may include: a normal buffer configured to generate a first received signal by receiving one of differential signals based on the other; a calibration signal generation circuit configured to generate a second received signal by receiving the one of the differential signals according to a reference voltage, and generate reference voltage calibration signals by comparing the phase of the second received signal to the phase of the first received signal; and a reference voltage generation circuit configured to calibrate the level of the reference voltage according to the reference voltage calibration signals.

A memory device with built-in flexible redundancy is provided according to various aspects of the present disclosure. In certain aspects, a memory device includes a first sense amplifier, a second sense amplifier, a first comparator, a second comparator, a reference circuit, and a logic gate. During a redundant read operation, the first sense amplifier, the first comparator, and the reference circuit are used to read one copy of a redundant bit stored in the memory device, and the second sense amplifier, the second comparator, and the reference circuit are used to read another copy of the redundant bit stored in the memory device. The logic gate may then determine a bit value based on the bit values of the read copies of the redundant bit (e.g., determine a bit value of one if the bit value of at least one of the read copies of the redundant bit is one).

A semiconductor device, the device comprising: a first silicon layer comprising first single crystal silicon; an isolation layer disposed over said first silicon layer; a first metal layer disposed over said isolation layer; a second metal layer disposed over said first metal layer; a first level comprising a plurality of transistors, said first level disposed over said second metal layer, wherein said isolation layer comprises an oxide to oxide bond surface, wherein said plurality of transistors comprise a second single crystal silicon region; and a plurality of capacitors, wherein said plurality of capacitors comprise functioning as a decoupling capacitor to mitigate power supply noise.

Some embodiments include an integrated assembly having digit lines supported by a base and extending along a first direction. A shield-connection-line is supported by the base and extends along the first direction. Transistor active regions are over the digit lines. Each of the active regions includes a channel region between an upper source/drain region and a lower source/drain region. The lower source/drain regions are coupled with the digit lines. Capacitors are coupled with the upper source/drain regions. Wordlines extend along a second direction which crosses the first direction. The wordlines include gate regions adjacent the channel regions. Shield lines extend along the second direction. The shield lines are above the digit lines and are coupled with the shield-connection-line.

A system includes a plurality of memory dice and a processing device coupled to the plurality of memory dice. The processing device is to determine whether an error correcting code (ECC) check of ECC-protected data read from a die of the plurality of memory dice results in detecting an error. In response to detecting the error from the ECC-protected data, the processing device performs a confirmation check that the error is a result of a defect in the die. In response to the confirmation check confirming the die is defective, the processing device ignores a temperature value from the die when determining whether to trigger a thermal-related operation.

A system includes a plurality of memory dice and a processing device coupled to the plurality of memory dice. The processing device is to determine whether an error correcting code (ECC) check of ECC-protected data read from a die of the plurality of memory dice results in detecting an error. In response to detecting the error from the ECC-protected data, the processing device performs a confirmation check that the error is a result of a defect in the die. In response to the confirmation check confirming the die is defective, the processing device ignores a temperature value from the die when determining whether to trigger a thermal-related operation.

A shift register unit, drive method thereof, gate drive device and display device. The shift register unit includes: an input subcircuit; a reset subcircuit; an output subcircuit configured to provide a clock signal at a clock signal end to a current stage shift register unit output end in response to a voltage signal at the pull-up node and a control signal having a first voltage level, and to disable an output at the current stage output end in response to the control signal having a second voltage level; a pull down control subcircuit configured to provide a second voltage signal having a low voltage level to a pull-down node in response to the voltage signal at the pull-up node, and to provide the voltage signal having a high voltage level to the pull-down node in response to the voltage signal having a high voltage level; and a pull down subcircuit

A sense amplifier includes a voltage comparator with offset compensation, a first clamping device and a second clamping device. The voltage comparator is coupled to a bit line and a reference bit line respectively, and configured to compare a first input voltage and a second input voltage to output a sensing signal. The first clamping circuit and the second clamping circuit trim a voltage corresponding to the bit line and a voltage corresponding to the reference bit line respectively to match the voltage corresponding to the reference bit line with the voltage corresponding to the bit line.

An Integrated Circuit (IC) includes a memory, circuit interconnections and control logic. The memory includes multiple standard-library Static Random Access Memory (SRAM) cells disposed on a substrate of the IC in multiple first layers, so that access to a respective SRAM cell to read and write data is through a cell-interface. The circuit interconnections, fabricated in one or more second layers separate from the first layers, interconnect cell-interfaces of a subgroup of the SRAM cells to form a ring oscillator that includes a cascade of N stages defined by the interconnected SRAM cells. The control logic is coupled to the cell-interfaces via the circuit interconnections, and is configured to apply an input signal to one or more of the cell-interfaces so as to trigger an oscillation of the ring oscillator whose frequency of oscillation is indicative of a speed of the SRAM cells of the memory.

A gate driver on array (GOA) circuit and a liquid crystal display include a plurality of stages of GOA unit circuits which are cascaded. Each stage of the GOA unit circuit includes a stage transmission signal buffering module which includes N inverters sequentially connected in series, where N is odd. At least one inverter comprises a first capacitor and a second capacitor. A first constant voltage is inputted into a terminal of the first capacitor, and a second constant voltage is inputted into a terminal of the second capacitor, and another terminal of the first capacitor and another terminal of the second capacitor are electrically connected with an output terminal of an (N−1)th inverter.