A memory includes a memory cell, one bitline coupled to the memory cell, a sense amplifier coupled to the one bitline, a timing circuit configured to enable the sense amplifier during a read operation, a control circuit configured to enable the sense amplifier independent of the timing circuit, and a pull-up circuit configured to pull up the one bitline while the sense amplifier is enabled by the control circuit. The method includes enabling a sense amplifier in a read operation by a timing circuit. The sense amplifier is coupled to at least one bitline, and the at least one bitline is coupled to a memory cell. The method further includes enabling the sense amplifier independent of the timing circuit in a second operation and pulling up the at least one bitline by a pull-up circuit while the sense amplifier is enabled in the second operation.

A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.

A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.

Methods, systems, and devices for biasing a memory cell during a read operation are described. For example, a memory device may bias a memory cell to a first voltage (e.g., a read voltage) during an activation phase of a read operation. After biasing the memory cell to the first voltage, the memory device may bias the memory cell to a second voltage greater than the first voltage (e.g., a write voltage) during the activation phase of the read operation. After biasing the memory cell to the second voltage, the memory device may initiate a refresh phase of the read operation. Based on a value stored by the memory cell prior to biasing the memory cell to the first voltage, the memory device may initiate a precharge phase of the read operation.

In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

Methods and apparatus are described for pinning out multiple memory devices using shared conductors therebetween and providing multiple chip select signals to indicate to which of the memory devices address signals on the shared conductors apply. In the case of a clamshell configuration with a top memory device having a corresponding bottom memory device and shared vias coupled therebetween, sharing two address signals for each shared via in this manner reduces the total number of vias used, thereby reducing routing congestion and enabling the addition of ground vias around the shared vias to reduce crosstalk for the address signals.

A shift register circuit, a driving method thereof, a gate drive circuit and a display device are provided. The shift register circuit includes an input sub-circuit, an output sub-circuit, a discharge sub-circuit and a noise reduction sub-circuit. The input sub-circuit is connected to an input signal terminal, a first power source terminal and a pull-down node, and configured to, under the control of an input signal, output a first power source terminal signal to the pull-down node. In the shift register circuit, the discharge sub-circuit may control the potential of the pull-down node to be an ineffective potential at the input stage, thereby preventing the noise reduction sub-circuit from affecting the potentials of the pull-up node and the output terminal under the control of the pull-down node, and ensuring normal output of the shift register circuit.

A shift register circuit, a driving method thereof, a gate drive circuit and a display device are provided. The shift register circuit includes an input sub-circuit, an output sub-circuit, a discharge sub-circuit and a noise reduction sub-circuit. The input sub-circuit is connected to an input signal terminal, a first power source terminal and a pull-down node, and configured to, under the control of an input signal, output a first power source terminal signal to the pull-down node. In the shift register circuit, the discharge sub-circuit may control the potential of the pull-down node to be an ineffective potential at the input stage, thereby preventing the noise reduction sub-circuit from affecting the potentials of the pull-up node and the output terminal under the control of the pull-down node, and ensuring normal output of the shift register circuit.

A refresh control device may include a command decoder configured to decode a command signal and a specific address, and output a refresh signal, an active signal and a row hammer refresh signal. The refresh control device may include a refresh controller configured to output an active address, a row hammer address and a refresh address based on the refresh signal, the active signal, the row hammer refresh signal and a latch address. The refresh control device may include a combiner configured to combine the active address, the row hammer address and the refresh address, and output a refresh control signal.