Methods, systems, and devices related to an improved driver for non-binary signaling are described. A driver for a signal line may include a set of drivers of a first type and a set of drivers of a second type. When the driver drives the signal line using multiple drivers of the first type, at least one additional driver of the first type may compensate for non-linearities associated with one or more other drivers of the first type, which may have been calibrated at other voltages. The at least one additional driver of the first type may be calibrated for use at a particular voltage, to compensate for non-linearities associated with the one or more other drivers of the first type as exhibited at that particular voltage.

Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

The present disclosure includes apparatuses, methods, and systems for increase of a sense current in memory. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to count a number of program operations performed on the memory cells of the memory during operation of the memory, and increase a magnitude of a current used to sense a data state of the memory cells of the memory upon the count of the number of program operations reaching a threshold count.

A semiconductor structure includes a substrate and a plurality of word lines located on a top surface of the substrate. Each of the word lines extends in a direction perpendicular to the top surface of the substrate. The plurality of word lines are arranged at intervals along a first direction. Any two adjacent ones of the word lines are arranged in an at least partially staggered manner along the first direction. The first direction is a direction parallel to the top surface of the substrate.

A method for obtaining circuit noise parameters and an electronic device are provided. The method includes: determining a plurality of circuits to be tested, where each circuit includes one or more signal lines, and each circuit has at least one operating state; obtaining a parasitic capacitance between each signal line and all others signal lines, and determining a logic state of each signal line under each of the operating states; determining a plurality of operating state combinations for the plurality of circuits to be tested, and determining one target operating state combination from the plurality of operating state combinations; and under the target operating state combination, determining noise parameters of each one of the signal lines to be tested according to the logic state of each one of the signal lines to be tested and the parasitic capacitance.

Provided is data receiving circuit, data receiving system and memory device. The data receiving circuit includes: first amplification circuit, configured to receive data signal, first reference signal and second reference signal, perform first comparison on the data signal and the first reference signal in response to sampling clock signal and output first signal pair, and perform second comparison on the data signal and the second reference signal and output second signal pair; second amplification circuit, configured to receive enable signal and feedback signal, selectively receive the first signal pair or the second signal pair as input signal pair based on the feedback signal during period in which the enable signal is at first level, receive the first signal pair during period in which the enable signal is at second level, amplify voltage difference of the first signal pair, and output first output signal and second output signal.

The present invention includes apparatus and a method for reading one or more data states from an integrated circuitry memory cell, including the steps of connecting the memory cell to a bit line which is connected to an amplifier having an offset control which introduces an offset during the sensing portion of a read cycle to identify a data state stored in the memory cell.

Exemplary methods, apparatuses, and systems include receiving read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets of sequences of read operations. An aggressor read operation is selected from the current set. A position in the sequence of read operations in the current set is determined such that the position that is preceded by at least a minimum number of read operations following a previous data integrity scan in a previous set of read operations. A data integrity scan is performed on a victim of the aggressor read operation at the determined position in the sequence of the current set of read operations.

The present invention includes apparatus and a method for reading one or more data states from an integrated circuitry memory cell, including the steps of connecting the memory cell to a bit line which is connected to an amplifier having an offset control which introduces an offset during the sensing portion of a read cycle to identify a data state stored in the memory cell.