A driving adjustment circuit and an electronic device are provided. The driving adjustment circuit includes a first NOT gate module, second NOT gate module and third NOT gate module sequentially connected. An input terminal of the first NOT gate module and an output terminal of the third NOT gate module are connected to a signal terminal. The first NOT gate module acquires a to-be-driven signal from the signal terminal and perform a NOT operation on the to-be-driven signal to obtain a first adjustment signal. The second NOT gate module receives the first adjustment signal and performing the NOT operation on the first adjustment signal to obtain a second adjustment signal, when the driving adjustment circuit is in an ON state. The third NOT gate module receives the second adjustment signal and perform voltage adjustment processing on the to-be-driven signal at the signal terminal according to the second adjustment signal.

A memory device and a glitch prevention method thereof are provided. The memory device includes a data strobe signal input circuitry, a transfer signal generating circuitry, a data alignment circuitry, and a blocking circuitry. The data strobe signal input circuitry is configured to input a data strobe signal. The transfer signal generating circuitry is configured to generate a transfer signal with pulses in synchronization with rising edges or falling edges of the data strobe signal in response to a transfer command. The data alignment circuitry is configured to align a data signal to be transferred in response to the generated transfer signal. The blocking circuitry is configured to block an input of the data strobe signal over a postamble timing of the data strobe signal according to a number of bursts counted in each time of data transfer.

Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. A size of a subsequent set of read operations is set to a second number, which less than the first number, based on the indicator of data integrity.

An integrated circuit includes: a dual port Static Random Access Memory (SRAM) cell including a plurality of transistors; a bit line pair connected to the dual port SRAM cell, the bit line pair including a first bit line and a second bit line spaced apart from each other in a first direction and extending in a second direction perpendicular to the first direction; a power line group including a plurality of power lines spaced apart from each other in the first direction, spaced apart from the bit line pair placed in the first direction, and extending in the second direction, the power line group being configured to apply a voltage to the dual-port SRAM cell; and a first word line provided between the first bit line and the second bit line and connected to the dual port SRAM cell.

A mobile electronic device may include a memory device and a memory controller including an error correction code (ECC) encoder to encode data, a constrained channel encoder configured to encode an output of the ECC encoder based on one or more constraints, a reinforcement learning pulse programming (RLPP) component configured to identify a programming algorithm for programming the data to the memory device, an expectation maximization (EM) signal processing component configured to receive a noisy multi-wordline voltage vector from the memory device and classify each bit of the vector with a log likelihood ration (LLR) value, a constrained channel decoder configured to receive a constrained vector from the EM signal processing component and produce an unconstrained vector, and an ECC decoder configured to decode the unconstrained vector. A machine learning interference cancellation component may operate based on or independent of input from the EM signal processing component.

A mobile electronic device may include a memory device and a memory controller including an error correction code (ECC) encoder to encode data, a constrained channel encoder configured to encode an output of the ECC encoder based on one or more constraints, a reinforcement learning pulse programming (RLPP) component configured to identify a programming algorithm for programming the data to the memory device, an expectation maximization (EM) signal processing component configured to receive a noisy multi-wordline voltage vector from the memory device and classify each bit of the vector with a log likelihood ration (LLR) value, a constrained channel decoder configured to receive a constrained vector from the EM signal processing component and produce an unconstrained vector, and an ECC decoder configured to decode the unconstrained vector. A machine learning interference cancellation component may operate based on or independent of input from the EM signal processing component.

Various embodiments provide for active suppression circuitry. The active suppression circuitry can be used with a circuit for a memory system, such as a dual data rate (DDR) memory system. For example, some embodiments provide an active suppression integrated circuit. The active suppression integrated circuit can be used by a memory system to efficiently suppress power supply noise caused by resonance of a power delivery network (PDN) of the memory system, thereby improving power integrity of the memory system input/output.

A data control circuit includes a first latch circuit, a self-block circuit, a second latch circuit, a third latch circuit, a first data timing-labeled signal generating circuit, and a second data timing-labeled signal generating circuit. The first latch circuit is arranged to receive a data window signal. The self-block circuit is coupled to the first latch circuit, and is arranged to generate a protection signal. The second latch circuit is coupled to the self-block circuit, and is arranged to output a first data timing-labeled signal. The third latch circuit is coupled to the second latch circuit, and is arranged to generate a second data timing-labeled signal. The first data timing-labeled signal generating circuit is arranged to generate a third data timing-labeled signal. The second data timing-labeled signal generating circuit is arranged to generate a fourth data timing-labeled signal.

A sense amplifier of a memory device that includes sense amplifier circuits and a reference sharing circuit is introduced. The sense amplifier circuits are configured to sense the plurality of bit lines according to an enable signal. The reference sharing circuit includes first switches and second switches that are coupled to the reference nodes and second reference nodes of the sense amplifier circuits, respectively. The first switches and second switches are controlled according to a control signal to control a first electrical connection among the first reference nodes, and to control a second electrical connection among the second reference nodes. An operation method of the sense amplifier and a memory device including the sense amplifier are also introduced.

A semiconductor integrated circuit has a reception circuit configured to receive a strobe signal of which a logic is intermittently switched in synchronization with a data signal, an output circuit configured to extract a low frequency component including at least a DC component of the strobe signal received by the reception circuit and to output a first signal, and a comparison circuit configured to compare a signal level of the first signal with a threshold level. The reception circuit is configured to change a boost amount of a high frequency component different from the low frequency component of the strobe signal based on a comparison result obtained by the comparison circuit.