An embodiment of a semiconductor apparatus may include technology to convert an analog voltage level of a memory cell of a multi-level memory to a multi-bit digital value, and determine a single-bit value of the memory cell based on the multi-bit digital value. Some embodiments may also include technology to track a temporal history of accesses to the memory cell for a duration in excess of ten seconds, and determine the single-bit value of the memory cell based on the multi-bit digital value and the temporal history. Other embodiments are disclosed and claimed.

An embodiment of a semiconductor apparatus may include technology to convert an analog voltage level of a memory cell of a multi-level memory to a multi-bit digital value, and determine a single-bit value of the memory cell based on the multi-bit digital value. Some embodiments may also include technology to track a temporal history of accesses to the memory cell for a duration in excess of ten seconds, and determine the single-bit value of the memory cell based on the multi-bit digital value and the temporal history. Other embodiments are disclosed and claimed.

A memory circuit for a print component including a plurality of I/O pads, including an analog pad, to connect to a plurality of signal paths which communicate operating signals to the print component. The memory circuit includes a controllable selector connected in line with one of the signal paths via the I/O pads, the selector controllable to disconnect the corresponding signal path to the print component, and a memory component to store memory values associated with the print component. A control circuit, in response to a sequence of operating signals received by the I/O pads representing a memory read, to operate the controllable selector to disconnect the signal path to the print component to block the memory read of the print component, and provide an analog signal to the analog pad to provide an analog electrical value at the analog pad representing stored memory values selected by the memory read.

The present technology relates to a semiconductor apparatus, a production method, and an electronic apparatus that enable semiconductor apparatuses to be laminated and the laminated semiconductor apparatuses to be identified. A semiconductor apparatus that is laminated and integrated with a plurality of semiconductor apparatuses, includes a first penetrating electrode for connecting with the other semiconductor apparatuses and a second penetrating electrode that connects the first penetrating electrode and an internal device, the second penetrating electrode being arranged at a position that differs for each of the laminated semiconductor apparatuses. The second penetrating electrode indicates a lamination position at a time of lamination. An address of each of the laminated semiconductor apparatuses in a lamination direction is identified by writing using external signals after lamination. The present technology is applicable to a memory chip and an FPGA chip.

A neural network comprising: a plurality of interconnected neural network elements, each comprising: a neuron circuit comprising a delta-sigma modulator, and at least one synapse device comprising a memristor connected to an output of said neuron circuit; wherein an adjustable synaptic weighting of said at least one synapse device is set based on said output of said neuron circuit

Sparsity-aware reconfiguration compute-in-memory (CIM) static random access memory (SRAM) systems are disclosed. In one aspect, a reconfigurable precision succession approximation register (SAR) analog-to-digital converter (ADC) that has the ability to form (n+m) bit precision using n-bit and m-bit sub-ADCs is provided. By controlling which sub-ADCs are used based on data sparsity, precision may be maintained as needed while providing a more energy efficient design.

Sparsity-aware reconfiguration compute-in-memory (CIM) static random access memory (SRAM) systems are disclosed. In one aspect, a reconfigurable precision succession approximation register (SAR) analog-to-digital converter (ADC) that has the ability to form (n+m) bit precision using n-bit and m-bit sub-ADCs is provided. By controlling which sub-ADCs are used based on data sparsity, precision may be maintained as needed while providing a more energy efficient design.

A memory device provides a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

A method and apparatus for audio mixing and playing are disclosed. The method includes: receiving at least two audio data streams (S102); decoding the at least two audio data streams (S104); and sending at least two decoded audio data streams to an Audio system of an Android system for audio mixing and playing (S106).

Technology for an apparatus is described. The apparatus can include a memory and a storage controller. The storage controller can be configured to receive a search command with one or more parameters that instructs the storage controller to search for a data pattern in data stored in the memory. The storage controller can be configured to search the data stored in the memory for the data pattern according to the one or more parameters included in the search command. The storage controller can be configured to locally search the data in the memory for the data pattern without transferring the data to a processor to perform the search.