A data erase operation is performed on the memory system. The directed data erase operation performed on the memory system erases blocks of the memory device including blocks that are indicated as not including user data. In some embodiments, a data erase operation may be performed on a memory system to erase those groups of memory cells (e.g., blocks) indicated as not including user data. In some embodiments, a data erase operation may be performed on a memory system to erase those groups of memory cells (e.g., blocks) indicated as valid without erasing those groups of memory cells (e.g., blocks) indicated as invalid. In some embodiments, a data erase operation that can be performed on a memory system may obtain information associated with failing scenes of groups of memory cells (e.g., blocks) prior to obtaining the information, and erase the blocks (e.g., invalid blocks) subsequently.

A data erase operation is performed on the memory system. The directed data erase operation performed on the memory system erases blocks of the memory device including blocks that are indicated as not including user data. In some embodiments, a data erase operation may be performed on a memory system to erase those groups of memory cells (e.g., blocks) indicated as not including user data. In some embodiments, a data erase operation may be performed on a memory system to erase those groups of memory cells (e.g., blocks) indicated as valid without erasing those groups of memory cells (e.g., blocks) indicated as invalid. In some embodiments, a data erase operation that can be performed on a memory system may obtain information associated with failing scenes of groups of memory cells (e.g., blocks) prior to obtaining the information, and erase the blocks (e.g., invalid blocks) subsequently.

1. The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.

A monotonic counter stores N binary words representing a value in N memory cells. When i memory cells of consecutive ranks between k modulo N and k+i modulo N each represent a value complementary to a null value, the counter is incremented by erasing a value of a memory cell of rank k+i+1 modulo N. When i+1 memory cells of consecutive ranks between k+1 modulo N and k+i+1 modulo N each represent the value complementary to the null value, the counter is incremented by incrementing a value of a memory cell of rank k modulo N by two step sizes and storing a result in a memory cell of rank k+1 modulo N, wherein, N is an integer greater than or equal to five, k is an integer, and i is an integer between 2 and N−3.

A monotonic counter stores N binary words representing a value in N memory cells. When i memory cells of consecutive ranks between k modulo N and k+i modulo N each represent a value complementary to a null value, the counter is incremented by erasing a value of a memory cell of rank k+i+1 modulo N. When i+1 memory cells of consecutive ranks between k+1 modulo N and k+i+1 modulo N each represent the value complementary to the null value, the counter is incremented by incrementing a value of a memory cell of rank k modulo N by two step sizes and storing a result in a memory cell of rank k+1 modulo N, wherein, N is an integer greater than or equal to five, k is an integer, and i is an integer between 2 and N−3.

A method for automatic expansion of a storage array includes: acquiring a word-line total number and bit-line total number of a target expanded storage array; calculating a translation amount of a translation array in a translation direction according to the word-line total number and the bit-line total number, a word-line total number and bit-line total number of the translation array and a preset translation rule, and calculating a number of repetitions of a repetition array in a repetition direction according to the translation amount, a word-line total number and bit-line total number of the repetition array and a preset repetition rule; and controlling at least part of the translation array and at least part of the repetition array to translate the translation amount along the translation direction and controlling the repetition array to repeat for the number of repetitions along the repetition direction to obtain the target expanded storage array.

Systems and methods are disclosed, including rebuilding a logical-to-physical (L2P) data structure of a storage system subsequent to relocating assigned marginal group of memory cells of a memory array of the storage system, such as when resuming operation from a low-power state, including an asynchronous power loss (APL).

The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.

A method of corrupting contents of a memory array includes asserting a signal at a reset node to thereby cause starving of current supply to the memory array, and selecting bit lines and complementary bit lines associated with desired columns of the memory array that contain memory cells to have their contents corrupted. For each desired column, a logic state of its bit line and complementary bit line are forced to a same logic state. Each word line associated with desired rows of the memory array that contains memory cells to have their contents corrupted is simultaneously asserted, and then simultaneously deasserted to thereby place each memory cell to have its contents corrupted into a metastable state during a single clock cycle.

A method of memory reset includes precharging bit lines of a memory array, asserting a signal at a reset node to remove the precharge voltage, and selecting write drivers associated with the bit lines associated with columns of the memory array that contain memory cells to be reset, with the assertion of the signal at the reset node also resulting in application of desired logic states to inputs of the selected write drivers to cause those selected write drivers to change a logic state of the bit lines associated with those write drivers. The method continues with asserting each word line associated with a row of the memory that contains memory cells to be reset to write desired logic states to all of the memory cells of the columns and rows of the memory to be reset during a single clock cycle, and then deasserting those word lines.