A memory system and memory controller for interleaving volatile and non-volatile memory accesses are described. In the memory system, the memory controller is coupled to the volatile and non-volatile memories using a shared address bus. Activate latencies for the volatile and non-volatile memories are different, and registers are included on the memory controller for storing latency values. Additional registers on the memory controller store precharge latencies for the memories as well as page size for the non-volatile memory. A memory access sequencer on the memory controller asserts appropriate chip select signals to the memories to initiate operations therein.

Methods and apparatus related to efficient implementation of geometric series are discussed herein. For example, memory stores data corresponding to a geometric series. Logic, coupled to the memory, generates a channel address based at least in part on a summation of a tag address and one or more geometric series components of the geometric series. Other embodiments are also claimed.

Methods and apparatus related to efficient implementation of geometric series are discussed herein. For example, memory stores data corresponding to a geometric series. Logic, coupled to the memory, generates a channel address based at least in part on a summation of a tag address and one or more geometric series components of the geometric series. Other embodiments are also claimed.

One embodiment describes a quantum memory system. The system includes an array controller that comprises a plurality of flux pumps configured to provide write currents in a write operation and read currents in a read operation with respect to a plurality of quantum memory cells, the array controller being configured to control timing associated with the write operation and the read operation in response to memory request signals based on application of the write currents and the read currents and based on recharging flux associated with the plurality of flux pumps.

A semiconductor device comprises a bit determination circuit to count the number of bits at a first level in an input address signal formed of a plurality of bits and to output a result indicating whether or not a value of the count exceeds a predetermined determination threshold value, as a bit determination result signal, and a selection control circuit to select a non-volatile program element to be cut off, based on the bit determination result signal and the address signal. Additional apparatus and methods are described.

A semiconductor device comprises a bit determination circuit to count the number of bits at a first level in an input address signal formed of a plurality of bits and to output a result indicating whether or not a value of the count exceeds a predetermined determination threshold value, as a bit determination result signal, and a selection control circuit to select a non-volatile program element to be cut off, based on the bit determination result signal and the address signal. Additional apparatus and methods are described.

Three-dimensional addressing for erasable programmable read only memory (EPROM) can include a number of EPROM banks, a number of shift registers, a row select data signal, a column select data signal, and a bank select data signal.

A measurement matrix generating system based on scrambling and a method thereof are disclosed. A plurality of independent identically distributed (i.i.d) elements is pre-stored in a circulant matrix register array, selections are made among the elements so as to perform an algebraic operation on the selected elements, and a measurement matrix with high availability is generated according to results of the operations, so as to achieve the technical effect of improving the availability of the measurement matrix in compressive sensing.

A measurement matrix generating system based on scrambling and a method thereof are disclosed. A plurality of independent identically distributed (i.i.d) elements is pre-stored in a circulant matrix register array, selections are made among the elements so as to perform an algebraic operation on the selected elements, and a measurement matrix with high availability is generated according to results of the operations, so as to achieve the technical effect of improving the availability of the measurement matrix in compressive sensing.

Described herein are techniques, systems, and circuits for addressing image data according to blocks. For example, in some cases, the address space may be divided into high order address bits and low order address bits. In these cases, an address circuit may twist an address space by shifting the high order bits and low order bits of an address in a rightward direction, shifting the low order bits of the address in a leftward direction, and shifting the high order bits and the low order bits of the address in the leftward direction. The circuit may modify the address value and untwist the address space. For example, the untwisting may include shifting the high order bits and the low order bits of an address in the rightward direction, shifting the low order bits of the address in the rightward direction, and shifting the high order bits and the low order bits of the address in the leftward direction.