An apparatus controls access to a memory module coupled to a host controller via a data bus to exchange data with the host controller. The apparatus has a configurable information memory and comprises: an access control input port via which the apparatus receives a data access command from the host controller; a control unit to identify a data access command including an access address directed to a predetermined storage region of the memory module, and generate an information processing command based at least on the access address directed to the predetermined storage region, such that the control unit can configure the information memory based on the information processing command or provide the information processing command to the memory module; and an access control output port via which the apparatus provides the information processing command to the memory module, such that the memory module outputs corresponding data information to the host controller based on the information processing command.

The present invention relates to a method of operating memory cells, comprising reading a previous user data from the memory cells; writing a new user data and merging the new user data with the previous user data into write registers; generating mask register information, and wherein the mask register information indicates bits of the previous user data stored in the memory cells to be switched or not to be switched in their logic values; counting numbers of a first logic value and a second logic value to be written using the mask register information, respectively; storing the numbers of the first logic value and the second logic value into a first counter and a second counter, respectively; and applying a programming pulse to the memory cells according to the mask register information.

A semiconductor memory device includes a memory cell array, first and second pads, an interface circuit connected to the first pad and configured to transmit data input through the first pad to the memory cell array and output data received from the memory cell array through the first pad, a ZQ calibration circuit that is connected to the second pad and executes a ZQ calibration to generate a ZQ calibration value, and a sequencer configured to control the ZQ calibration circuit to apply the ZQ calibration value to the interface circuit. A command set is input through the first pad after reading data from the memory cell array to cause the interface circuit to output the data read from the memory cell array, and the ZQ calibration circuit executes the ZQ calibration after the command set is input and before the data is output through the first pad.

A semiconductor memory device includes a memory cell array, first and second pads, an interface circuit connected to the first pad and configured to transmit data input through the first pad to the memory cell array and output data received from the memory cell array through the first pad, a ZQ calibration circuit that is connected to the second pad and executes a ZQ calibration to generate a ZQ calibration value, and a sequencer configured to control the ZQ calibration circuit to apply the ZQ calibration value to the interface circuit. A command set is input through the first pad after reading data from the memory cell array to cause the interface circuit to output the data read from the memory cell array, and the ZQ calibration circuit executes the ZQ calibration after the command set is input and before the data is output through the first pad.

A memory device of a memory module includes a CA buffer that receives a command/address (CA) signal through a bus shared by a memory device different from the memory device of the memory module, and a calibration logic circuit that identifies location information of the memory device on the bus. The memory device recognizes its own location on a bus in a memory module to perform self-calibration, and thus, the memory device appropriately operates even under an operation condition varying depending on a location in the memory module.

An address latch includes a first address processing unit and a second address processing unit. The first address processing unit latches an external address signals to output first latched signals through an output node based on a read command and a write command. The second address processing unit latches the external address signals based on the read command with a burst length set to a first value and outputs second latched signals through the output node based on an internal read command.

An address latch includes a first address processing unit and a second address processing unit. The first address processing unit latches an external address signals to output first latched signals through an output node based on a read command and a write command. The second address processing unit latches the external address signals based on the read command with a burst length set to a first value and outputs second latched signals through the output node based on an internal read command.

A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising: responsive to receiving a memory access command, determining that the memory access command is a dual-address command comprising a source address and a destination address; generating a first content addressable memory (CAM) entry associated with a read command of the dual-address command, wherein the first CAM entry references the source address; generating a second CAM entry associated with a write command of the dual-address command, wherein the second CAM entry references the destination address; inserting the first CAM entry and the second CAM entry into a CAM; and issuing, to the memory device, the read command associated with the first CAM entry.

A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising: responsive to receiving a memory access command, determining that the memory access command is a dual-address command comprising a source address and a destination address; generating a first content addressable memory (CAM) entry associated with a read command of the dual-address command, wherein the first CAM entry references the source address; generating a second CAM entry associated with a write command of the dual-address command, wherein the second CAM entry references the destination address; inserting the first CAM entry and the second CAM entry into a CAM; and issuing, to the memory device, the read command associated with the first CAM entry.

A memory module has a registering clock driver (RCD) that issues two column address strobe (CAS) commands with a single memory access command to exchange a double amount of data per dynamic random access memory (DRAM) device per memory access command. With double the amount of data per DRAM device, the memory module can provide double the pseudo channels as compared to a memory module where a single CAS command is issued per access command. The RCD can time division multiplex separate first commands for a first group of the DRAM devices from second commands for a second group of the DRAM devices on the command/address (CA) bus.