An electronic device includes a shifting circuit and a dock repeater. The shifting circuit is configured to generate a write shifting flag that is inactivated when a write signal for a write operation is activated. The clock repeater is configured to block generation of a read repeating dock that is used in a read operation when the write shifting flag is inactivated.

A memory system includes a memory controller and a memory. The memory controller selectively operates in a first mode and a second mode. In the first mode, the memory controller transmits a first command continuously during a plurality of clock cycles. In the second mode, the memory controller to mix a second command with the first command and transmit the mixture of the first command and the second command. The memory changes command latch timing depending on the first or second mode.

A memory system includes a memory controller and a memory. The memory controller selectively operates in a first mode and a second mode. In the first mode, the memory controller transmits a first command continuously during a plurality of clock cycles. In the second mode, the memory controller to mix a second command with the first command and transmit the mixture of the first command and the second command. The memory changes command latch timing depending on the first or second mode.

A memory device includes a command interface configured to receive a two-cycle command from a host device via multiple command address bits. The memory device also includes a command decoder configured to decode a first portion of the multiple command address bits in a first cycle of the two-cycle command. The command decoder includes mask circuitry. The mask circuitry includes mask generation circuitry configured to generate a mask signal. The mask circuitry also includes multiplexer circuitry configured to apply the mask signal to block the command decoder from decoding a second portion of the multiple command address bits in a second cycle of the two-cycle command.

An apparatus controls access to a memory module coupled to a host controller via a data bus to exchange data with the host controller. The apparatus has a configurable information memory and comprises: an access control input port via which the apparatus receives a data access command from the host controller; a control unit to identify a data access command including an access address directed to a predetermined storage region of the memory module, and generate an information processing command based at least on the access address directed to the predetermined storage region, such that the control unit can configure the information memory based on the information processing command or provide the information processing command to the memory module; and an access control output port via which the apparatus provides the information processing command to the memory module, such that the memory module outputs corresponding data information to the host controller based on the information processing command.

An apparatus controls access to a memory module coupled to a host controller via a data bus to exchange data with the host controller. The apparatus has a configurable information memory and comprises: an access control input port via which the apparatus receives a data access command from the host controller; a control unit to identify a data access command including an access address directed to a predetermined storage region of the memory module, and generate an information processing command based at least on the access address directed to the predetermined storage region, such that the control unit can configure the information memory based on the information processing command or provide the information processing command to the memory module; and an access control output port via which the apparatus provides the information processing command to the memory module, such that the memory module outputs corresponding data information to the host controller based on the information processing command.

Methods, systems, and apparatuses for managing clock signals at a memory device are described. A memory device or other component of a memory module or electronic system may offset a received clock signal. For example, the memory device may receive a clock signal that has a nominal speed or frequency of operation for a system, and the memory device may adjust or offset the clock signal based on other operating factors, such as the speed or frequency of other signals, physical constraints, indications received from a host device, or the like. A clock offset value may be based on propagation of, for example, command/address signaling. In some examples, a memory module may include a registering clock driver (RCD), hub, or local controller that may manage or coordinate clock offsets among or between various memory devices on the module. Clock offset values may be programmed to a mode register or registers.

Methods, systems, and apparatuses for managing clock signals at a memory device are described. A memory device or other component of a memory module or electronic system may offset a received clock signal. For example, the memory device may receive a clock signal that has a nominal speed or frequency of operation for a system, and the memory device may adjust or offset the clock signal based on other operating factors, such as the speed or frequency of other signals, physical constraints, indications received from a host device, or the like. A clock offset value may be based on propagation of, for example, command/address signaling. In some examples, a memory module may include a registering clock driver (RCD), hub, or local controller that may manage or coordinate clock offsets among or between various memory devices on the module. Clock offset values may be programmed to a mode register or registers.

A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.

A semiconductor integrated circuit of an embodiment includes: a delay element array circuit in which a plurality of delay elements having a delay amount Tw are connected in series; a flip-flop group including a plurality of flip-flops each of which an input is connected to an output of a corresponding delay element; a delay element group configured to generate, from an input clock signal, a plurality of output clock signals each having a delay difference of a second delay amount smaller than the delay amount Tw; and a delay unit configured to set a third delay amount smaller than the second delay amount, and the delay element group and the delay unit are connected in series between an output terminal of an input signal CLK_DET and an input terminal of the flip-flop group.