Embodiments of bonded unified semiconductor chips and fabrication and operation methods thereof are disclosed. In an example, a method for forming a unified semiconductor chip is disclosed. A first semiconductor structure is formed. The first semiconductor structure includes one or more processors, an array of embedded DRAM cells, and a first bonding layer including a plurality of first bonding contacts. A second semiconductor structure is formed. The second semiconductor structure includes an array of NAND memory cells and a second bonding layer including a plurality of second bonding contacts. The first semiconductor structure and the second semiconductor structure are bonded in a face-to-face manner, such that the first bonding contacts are in contact with the second bonding contacts at a bonding interface.

A method includes determining, via status polling at a first interval, an indicator of an almost ready status of a set of memory cells of a memory device, based on the indicator of the almost ready status, determining the set of memory cells of the memory device is almost ready to complete execution of an operation on the set of memory cells of the memory device, and responsive to determining the set of memory cells of the memory device is almost ready to complete execution of the operation, performing status polling at a second interval.

The application discloses an integrated memory device, a manufacturing method and an operation method thereof. The integrated memory cell includes: a first memory cell; and an embedded second memory cell, serially coupled to the first memory cell, wherein the embedded second memory cell is formed on any one of a first side and a second side of the first memory cell.

A memory device includes an one-time-programmable (OTP) memory unit. The OTP memory unit includes a first gate, a first conductive segment and a second conductive segment of a first structure, and a first magnetic tunnel junction (MTJ) component. The first gate is formed across an active region, and corresponds to gate terminals of a first transistor and a second transistor. The first conductive segment and the second conductive segment of the first structure are formed above the active region, and correspond to a first source/drain terminal of the first transistor and a first source/drain terminal of the second transistor, respectively. The first MTJ component is formed in a first conductive layer above the active region, and is coupled to the first conductive segment and the second conductive segment for receiving a programming signal from a data line. A method for fabricating a memory device is also disclosed herein.

Methods, systems, and devices for analog storing information are described herein. Such methods, systems and devices are suitable for synaptic weight storage in electronic neuro-biological mimicking architectures. A memory device may include a plurality of memory cells each respective memory cell in the plurality of memory cells with a respective programming sensitivity different from the respective programming sensitivity of other memory cells in the plurality. Memory cells may be provided on different decks of a multi-deck memory array. A storage element material of a respective memory cell may have a thickness and/or a composition different from another thickness or composition of a respective storage element material of another respective memory cell on a different deck in the multi-deck memory array. The memory device may further include reading circuitry configured to analogically read respective information programmed in the respective memory cells and to provide an output based on a combination of the respective information analogically read from the respective memory cells.

A semiconductor storage apparatus according to one embodiment of the present disclosure includes a plurality of memory cells and a control circuit. Each of the memory cells includes a magnetization reversal memory device and a first switch device that controls a current to flow to the magnetization reversal memory device. The control circuit performs a writing control based on an asymmetric property of a writing error rate curve line with respect to a writing voltage of the magnetization reversal memory device.

Methods, systems, and devices for power switching for embedded memory are described. A system may be configured with circuitry (e.g., power supply switching circuitry) coupled with or between a power supply and a power input node of a memory device, which may support selectively coupling or isolating the memory device and the power supply based on various conditions. For example, the circuitry may be configured for a selective coupling or a selective isolation based on a voltage level of the power supply satisfying various voltage thresholds. The circuitry may also be configured to support various input or output signaling, such as transmitting an indication of an isolation from the power supply, transmitting an indication to perform a memory initialization, or receiving an indication or command to perform a power cycle.

An embodiment of the present disclosure provides a memory device. The memory device comprises a substrate. A plurality of word line layers are disposed over the substrate. An array of vertical NOR columns is in a first area of the plurality of word line layers. Each vertical NOR column in the array of vertical NOR columns includes a first conductive pillar and a second conductive pillar. Each vertical NOR column comprises a first plurality of memory cells arranged in a NOR configuration formed at cross points of word line layers in the plurality of word line layers with the first and second conductive pillars. An array of vertical NAND columns is in a second area of the plurality of word line layers. Each vertical NAND column in the array of vertical NAND columns includes a memory pillar. Each vertical NAND column comprises a second plurality of memory cells arranged in a NAND configuration formed at cross points of word line layers in the plurality of word line layers with the memory pillar.

A 3D device, the device including: a first level including logic circuits; a second level including a plurality of memory circuits, where the first level is bonded to the second level, where the bonded includes oxide to oxide bonds, and where the first level includes at least one voltage regulator circuit.

Ferroelectric field effect transistors (FeFETs) having band-engineered interface layers are described. In an example, an integrated circuit structure includes a semiconductor channel layer above a substrate. A metal oxide material is on the semiconductor channel layer, the metal oxide material having no net dipole. A ferroelectric oxide material is on the metal oxide material. A gate electrode is on the ferroelectric oxide material, the gate electrode having a first side and a second side opposite the first side. A first source/drain region is at the first side of the gate electrode, and a second source/drain region is at the second side of the gate electrode.