A static random-access memory (SRAM) includes a SRAM cell module, comprising a plurality of SRAM cell partitions, and an initialization register, containing data configured to control initialization of at least some of the plurality of partitions during an initialization phase. The SRAM also includes a control module coupled with the SRAM cell module and the initialization register, configured to read the initialization register during the initialization phase, and to selectively initialize a portion of the plurality of SRAM cell partitions, based at least in part on the data contained within the initialization register.

An operating method of a storage controller which communicates with a non-volatile memory device is provided. The method includes determining whether a program/erase (P/E) count of a target page including a plurality of sectors is greater than or equal to a P/E threshold value; based on determining that the P/E count of the target page is greater than or equal to the P/E threshold value, fetching the target page; determining a first sector having high reliability and a second sector having low reliability from the plurality of sectors of the fetched target page; and expanding a second parity area of the second sector by moving a margin region in a first parity area of the first sector to the second parity area of the second sector.

The present disclosure provides a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate comprising a memory region and a logic region; forming a memory gate in or on the memory region; forming a plurality of first poly-silicon gates on the memory region and surrounding the memory gate; and forming a plurality of second poly-silicon gates on the logic region simultaneously with the formation of the first poly-silicon gates.

Methods, systems, and devices for power supply control for non-volatile memory are described. A package containing a memory subsystem may include a controller, a volatile memory, and a non-volatile memory. The package may include one or more pins for receiving a supply voltage that may be distributed to the controller, the volatile memory, and the non-volatile memory using one or more power supply rails. The memory subsystem may include one or more switching components along one or more power supply rails to selectively decouple the non-volatile memory from the one or more power supply rails, thereby enabling the non-volatile memory to be powered down separately from the controller and volatile memory. The controller may determine whether to couple or uncouple the non-volatile memory from a power supply rail based on various criteria associated with accessing the non-volatile memory.

A method and a controller for recovering data in event of a program failure and a storage system using the method and the controller are disclosed. The controller includes main units of a parity generator, a volatile memory module and a processor. With a parity in the volatile memory module and successfully programmed sub-data, a program failed write data can be recovered and correctly programmed. The method of the present invention has advantages of saving use of storage resources and extending lifetime of the storage system than other methods for recovering data in event of a program failure.

A data storage circuit includes a matrix array of memory cells. The memory cells are configurable and non-volatile. Each one is intended to operate in either one of two operating configurations; the first operating configuration corresponding to a ferroelectric random-access memory; and the second operating configuration corresponding to a metal-oxide resistive random-access memory. Each memory cell comprises: a stack of thin layers in the following order: a first layer made of an electrically conductive material forming a lower electrode, a second layer made of a dielectric and ferroelectric material and a third layer made of electrically conductive material forming an upper electrode.

Methods, devices, and systems related to storing parity data in dynamic random access memory (DRAM) are described. In an example, a method can include generating, at a controller, parity data based on user data queued for writing to a non-volatile memory device, receiving the parity data at a DRAM device from the controller and writing the parity data to the DRAM device, receiving the user data at a non-volatile memory device from the controller and writing the user data to the non-volatile memory device, reading the user data from the non-volatile memory device via the controller, and receiving the parity data at the controller from the DRAM device.

A method includes determining a first memory access count threshold for a first word line of a block of memory cells and determining a second memory access count threshold for a second word line of the block of memory cells. The second memory access count threshold can be greater than the first memory access count threshold. The method can further include incrementing a memory block access count corresponding to the block of memory cells that includes the first word line and the second word line in response to receiving a memory access command and refreshing the first word line when the memory block access count corresponding to the block of memory cells is equal to the first memory access count threshold.

A memory system includes a resistive nonvolatile memory array configured to store data and error correction code (ECC) bits and a memory controller. The memory controller is configured to detect a number of errors among the stored look-ahead bits, compare the number of look-ahead bit errors to a threshold number of bit errors, perform a strong refresh of the data and look-ahead bits stored in the resistive nonvolatile memory array when the number of look-ahead bit errors equals or exceeds the threshold, and perform a weak refresh of the data and look-ahead bits by refreshing only units of stored data having data bit errors and look-ahead bits having look-ahead bit errors when the number of look-ahead bit errors is less than the threshold.

An integrated circuit includes a first plurality of flip flops; a first bank of resistive memory cells, wherein each flip flop of the first plurality of flip flops uniquely corresponds to a resistive memory cell of the first bank of resistive memory cells; write circuitry configured to store data from the first plurality of flip flops to the first bank of resistive memory cells; and read circuitry configured to read data from the first bank of resistive memory cells and provide the data from the first bank for storage into the first plurality of flip flops.