Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.

Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be used to charge a second ferroelectric memory cell by transferring charge from a plate of first ferroelectric memory cell to a plate of the second ferroelectric memory cell. In some examples, prior to the transfer of charge, the first ferroelectric memory cell may be selected for a first operation in which the first ferroelectric memory cell transitions from a charged state to a discharged state and the second ferroelectric memory cell may be selected for a second operation during which the second ferroelectric memory cell transitions from a discharged state to a charged state. The discharging of the first ferroelectric memory cell may be used to assist in charging the second ferroelectric memory cell.

An apparatus includes a first storage cell with an electrical property. The first storage cell is configured to change the electrical property in response to a first light energy, and to maintain the change to the electrical property. The first storage cell is also configured to alter the change to the electrical property in response to a second light energy, and to maintain the alteration to the change to the electrical property. A second storage cell disposed over the first storage cell in a vertical plane of the first storage cell. A third storage cell disposed adjacent to the first storage cell in a horizontal plane of the first storage cell.

An electronic device is presented, the device comprises: a spin accumulating structure; a spin selective filter electrically connected at a first end thereof to a first surface of said spin accumulating layer structure; a charge carrier source attached to said spin selective filter at a second end of the spin selective filter; wherein the spin selective filter is configured to allow passage of the charge carriers having a predetermined spin orientation from the charge carrier source to the spin accumulating structure, thereby causing a variation of spin distribution of the charge carriers within the spin accumulating structure. The device comprises further at least first and second pairs of electrical contacts which are connected to the spin accumulating structure and define first and second electrical paths through said spin accumulating structure, said first and second electrical paths intersecting within said spin accumulating structure. The device including a circuit configured to apply an electrical current between the first pair of electrical contacts and to detect the variation of spin-distribution of charge carriers within the spin accumulating structure by determining electrical voltage between the second pair of electrical contacts in response to the applied electrical current.

An electronic device is presented, the device comprises: a spin accumulating structure; a spin selective filter electrically connected at a first end thereof to a first surface of said spin accumulating layer structure; a charge carrier source attached to said spin selective filter at a second end of the spin selective filter; wherein the spin selective filter is configured to allow passage of the charge carriers having a predetermined spin orientation from the charge carrier source to the spin accumulating structure, thereby causing a variation of spin distribution of the charge carriers within the spin accumulating structure. The device comprises further at least first and second pairs of electrical contacts which are connected to the spin accumulating structure and define first and second electrical paths through said spin accumulating structure, said first and second electrical paths intersecting within said spin accumulating structure. The device including a circuit configured to apply an electrical current between the first pair of electrical contacts and to detect the variation of spin-distribution of charge carriers within the spin accumulating structure by determining electrical voltage between the second pair of electrical contacts in response to the applied electrical current.

A system includes a plurality of optical identifiers and a reader for the optical identifiers. Each optical identifier has an optical substrate and a volume hologram (e.g., with unique data, such as a code page) in the optical substrate. The reader for the optical identifiers includes an illumination source (e.g., a laser), and a camera. The illumination source is configured to direct light into a selected one of the optical identifiers that has been placed into the reader to produce an image of the associated volume holograms at the camera. The camera is configured to capture the image. The captured image may be stored in a digital format by the system.

A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

Devices, systems and methods for improving the performance of a memory device are described. An example method includes obtaining a plurality of cell counts for each of a plurality of read voltages applied to the memory device, generating, based on the plurality of cell counts and the plurality of read voltages, at least one ones count, at least one checksum, and a plurality of samples corresponding to a distribution function of at least one read voltage of the plurality of read voltages, determining an updated value for the at least one read voltage based on an output of a deep neural network whose input comprises the at least one ones count, the at least one checksum, and the plurality of samples, and applying the updated value of the at least one read voltage to the memory device to retrieve information from the memory device.

A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

Embodiments of the present invention provide systems and methods to robustly inter-convert between polarization-entangled photon pairs and time-entangled photon pairs, such that produced polarization-entangled photons pairs can be converted into time-entangled photon pairs, stored as time-entangled photon pairs to preserve the entanglement for longer periods of time, and then converted back to polarization-entangled photon pairs when ready for manipulation, processing, and measurement by a quantum application.