Disclosed is a cell that integrates a pixel and a two-terminal non-volatile memory device. The cell can be selectively operated in write, read and functional computing modes. In the write mode, a first data value is stored the memory device. In the read mode, it is read from the memory device. In the functional computing mode, the pixel captures a second data value and a sensed change in an electrical parameter (e.g., voltage or current) on a bitline connected to the cell is a function of both the first and second data value. Also disclosed is an IC structure that includes an array of the cells and, when multiple cells in a given column are concurrently operated in the functional computing mode, the sensed total change in the electrical parameter on the bitline for the column is indicative of a result of a dot product computation.

A memory device is described. The memory device comprises a plurality of stacked memory layers, wherein each of the plurality of stacked memory layers comprises a plurality of memory cells. The memory device further comprises an optical die bonded to the plurality of stacked memory layers and in electrical communication with the stacked memory layers through one or more interconnects. The optical die comprises an optical transceiver, and a memory controller configured to control read and/or write operations of the stacked memory layers. The optical die may be positioned at one end of the plurality of stacked memory layers. The one or more interconnects may comprise one or more through silicon vias (TSV). The plurality of memory cells may comprise a plurality of solid state memory cells. The memory devices described herein can enable all-to-all, point-to-multipoint and ring architectures for connecting logic units with memory devices.

Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be used to charge a second ferroelectric memory cell by transferring charge from a plate of first ferroelectric memory cell to a plate of the second ferroelectric memory cell. In some examples, prior to the transfer of charge, the first ferroelectric memory cell may be selected for a first operation in which the first ferroelectric memory cell transitions from a charged state to a discharged state and the second ferroelectric memory cell may be selected for a second operation during which the second ferroelectric memory cell transitions from a discharged state to a charged state. The discharging of the first ferroelectric memory cell may be used to assist in charging the second ferroelectric memory cell.

A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

An apparatus comprising a cavity having interior surfaces or reflecting elements, one or more transmitters configured to receive an electrical signal, transform the electrical signal into an electromagnetic wave signal, and introduce the electromagnetic wave signal into an inside of the cavity, and one or more receivers configured to retrieve the electromagnetic wave signal, transform the electromagnetic wave signal to a corresponding electrical signal, and transmit the corresponding electrical signal to the outside of the cavity is disclosed. The electromagnetic wave signal is contained within the inside of the cavity until retrieved by undergoing a series of reflections or traversals between the interior surfaces of the cavity or the reflecting elements within the cavity. The apparatus may further comprise one or more regenerators configured to re-amplify, re-shape, and/or re-time the electromagnetic wave signal traveling within the inside of the cavity.

A system includes a plurality of optical identifiers and a reader for the optical identifiers. Each optical identifier has an optical substrate and a volume hologram (e.g., with unique data, such as a code page) in the optical substrate. The reader for the optical identifiers includes an illumination source (e.g., a laser), and a camera. The illumination source is configured to direct light into a selected one of the optical identifiers that has been placed into the reader to produce an image of the associated volume holograms at the camera. The camera is configured to capture the image. The captured image may be stored in a digital format by the system.

A semiconductor memory device capable of satisfying multiple reliability conditions and multiple performance requirements is provided. A variable resistance memory of the disclosure makes it possible to write data in a memory array by changing a write condition according to the type of a write command from the outside. If the write command is an endurance-related command, an endurance algorithm is selected and data is written in an endurance storage area. If the write command is a retention-related command, a retention algorithm is selected and data is written in a retention storage area.

A quantum storage device, including: a sample cryostat configured to load a storage crystal and a filter crystal and configured to cool the storage crystal and the filter crystal to a preset temperature; a laser control system configured to generate a control light and a signal light to perform a quantum storage of the signal light based on a spin population locking; a quantum state encoding and analysis system configured to perform a quantum state encoding and analysis of signal photons; and a filtering system configured to suppress noise introduced by the control light and extract the signal photons.

An apparatus has a plurality of photonic elements. At least two photonic elements forming a cavity. At least one photonic element receives first electromagnetic radiation from outside the cavity and transmits the first electromagnetic radiation into the photonic cavity. At least one photonic element receives second electromagnetic radiation from outside the cavity and transmits the second radiation into the photonic cavity. A photonic memory disposed in the cavity comprises an atomic system that: receives a photon field of first radiation; receives second radiation; stores at least a portion of the field of the photon in the atomic system via an atomic transition using the photon and the received second radiation; emits the stored portion of the photon upon receiving third electromagnetic radiation. The apparatus directs the photon into the photonic memory, after being reflected into the photonic cavity by at least one of the photonic elements; and outputs the emitted portion of the field into the cavity. The apparatus controls the photon flux density of the third electromagnetic radiation to control the superposition of the said stored field portion.

A quantum information storage device includes: a first gas cell and a second gas cell; a light splitter configured to cause first light in a first state to travel along a first optical path intersecting the first gas cell and cause the first light in a second state to travel along a second optical path intersecting the second gas cell, the first light in the first state and the first light in the second state being among the first light emitted from a first light source; a second light source configured to emit, to the first gas cell and the second gas cell, second light that is capable of bringing an atom into a two-photon resonance state together with the first light; and a light synthesizer disposed at a subsequent section of the first gas cell and the second gas cell and configured to synthesize third light generated when a photon included in the second light acts on the atom in the two-photon resonance state in the first gas cell and the second gas cell. An inner wall of each of the first gas cell and the second gas cell is coated with a relaxation prevention film that prevents relaxation of quantum superposition in the two-photon resonance state.