Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.

Systems and methods for an optical ternary content addressable memory (TCAM) are provided. The optical TCAM implements a time-division multiplexing (TDM) based encoding scheme to encode each bit position of a search word in the time domain. Each bit position is associated with at least two time slots. The encoded optical signal comprising the search word is routed through one or more modulators configured to represent a respective TCAM stored word. If a mismatch between at least one bit position of the search word and at least one TCAM stored word occurs, a photodetector or photodetector array will detect light.

Devices, systems, and methods for non-volatile storage include a well activation device operable to modify one or more wells from a plurality of wells of a flow cell to provide a set of readable wells. Readable wells are configured to allow exposure of a well to substances from nucleotide sequencing fluids, and prevent exposure to other substances and fluids, such as nucleotide synthesizing fluids. The well activation device may also modify wells to provide a set of writeable wells. This set of wells is configured to allow exposure to the nucleotide synthesizing fluids and substances; and prevent exposure to the nucleotide sequencing fluids and substances. There may also be provisions made for risk mitigation for data errors such as generating commands to write specified data to a nucleotide sequence associated with a particular location in a storage device, reading the nucleotide sequence and performing a comparison.

A processing device receives a request specifying a logical address associated with a host-initiated operation directed at a first portion of a memory device. The processing device accesses a second L2P table comprising a mapping between logical addresses and physical addresses in a second portion of the memory device. A physical location within the second portion of the memory device is identified based on the second L2P table. The physical location corresponds to a portion of a first L2P table that specifies a physical address within the first portion of the memory device that corresponds to the logical address. The physical address is identified based on the portion of the first L2P table and the host-initiated operation is performed at the physical address.

A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.

A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).

A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).

An apparatus has a plurality of photonic elements. At least two photonic elements forming a cavity. At least one photonic element receives first electromagnetic radiation from outside the cavity and transmits the first electromagnetic radiation into the photonic cavity. At least one photonic element receives second electromagnetic radiation from outside the cavity and transmits the second radiation into the photonic cavity. A photonic memory disposed in the cavity comprises an atomic system that: receives a photon field of first radiation; receives second radiation; stores at least a portion of the field of the photon in the atomic system via an atomic transition using the photon and the received second radiation; emits the stored portion of the photon upon receiving third electromagnetic radiation. The apparatus directs the photon into the photonic memory, after being reflected into the photonic cavity by at least one of the photonic elements; and outputs the emitted portion of the field into the cavity. The apparatus controls the photon flux density of the third electromagnetic radiation to control the superposition of the said stored field portion.

A photonic spin register includes: a shift register unit including a magnetic material layer having a shape extending in one direction; and a write unit configured to write spin information into a magnetic domain in the magnetic material layer by transferring information included in an optical signal that is a pulse amplitude-modulated and serial input signal, to a spin state of the magnetic domain in the magnetic material layer by means of a photocurrent corresponding to the optical signal or by irradiation with the optical signal. When a shift current flows through the shift register unit in the one direction, a domain wall is configured to move in the magnetic material layer, thereby allowing the spin information to move and be buffered in the magnetic material layer.