In a particular implementation, a method of storing dynamic random-access memory (DRAM) data in respective magneto-electric magnetic tunnel junctions (ME-MTJ) of D-MRAM bit-cells of a D-MRAM bit-cell memory array, the method comprising: for each of the D-MRAM bit-cells: writing a first data value in a storage capacitor; and in a first cycle, providing a first voltage to a source line coupled to an ME-MTJ, wherein in response to the storage capacitor storing the first data value, the ME-MTJ is configured to store the first data value if the first voltage generates a voltage difference between first and second terminals of the ME-MTJ.

Embodiments may be generally direct to apparatuses, systems, method, and techniques to determine a configuration for a plurality of connectors, the configuration to associate a first interconnect protocol with a first subset of the plurality of connectors and a second interconnect protocol with a second subset of the plurality of connectors, the first interconnect protocol and the second interconnect protocol are different interconnect protocols and each comprising one of a serial link protocol, a coherent link protocol, and an accelerator link protocol, cause processing of data for communication via the first subset of the plurality of connectors in accordance with the first interconnect protocol, and cause processing of data for communication via the second subset of the plurality of connector in accordance with the second interconnect protocol.

In a particular implementation, a method of storing dynamic random-access memory (DRAM) data in respective magneto-electric magnetic tunnel junctions (ME-MTJ) of D-MRAM bit-cells of a D-MRAM bit-cell memory array, the method comprising: for each of the D-MRAM bit-cells: writing a first data value in a storage capacitor; and in a first cycle, providing a first voltage to a source line coupled to an ME-MTJ, wherein in response to the storage capacitor storing the first data value, the ME-MTJ is configured to store the first data value if the first voltage generates a voltage difference between first and second terminals of the ME-MTJ.

A novel memory device is provided.

The memory device including a plurality of memory cells arranged in a matrix, and each of the memory cells includes a transistor and a capacitor. The transistor includes a first gate and a second gate, which include a region where they overlap with each other with a semiconductor layer therebetween. The memory device has a function of operating in a writing mode, a reading mode, a refresh mode, and an NV mode. In the refresh mode, data retained in the memory cell is read, and then the read data is written to the memory cell again for first time. In the NV mode, data retained in the memory cell is read, the read data is written to the memory cell again for second time, and then a potential at which the transistor is turned off is supplied to the second gate. The NV mode operation enables data to be stored for a long time even when power supply to the memory cell is stopped. The memory cell can store multilevel data.

A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode.

A memory storage device is disclosed herein which having volatile memory cells and non-volatile memory cells. The memory storage device can be implemented within a portable electronic device. These portable electronic devices often load data from non-volatile memory cells into volatile memory cells, for example, upon powering up. Conventionally, portable electronic devices often include separate non-volatile memory storage devices and volatile memory storage devices which requires a significant amount of time to transfer data stored in non-volatile memory storage devices to the volatile memory storage devices. However, the memory storage device integrates the volatile memory cells and the non-volatile memory cells into a single integrated memory device. This direct writing of the data stored in the non-volatile memory cells into the volatile memory cells as disclosed herein significantly reduces time required to load data from the non-volatile memory cells to the volatile memory cells which can significantly speed up powering up of portable electronic devices.

The present disclosure includes methods, and circuits, for operating a memory device. One method embodiment for operating a memory device includes controlling data transfer through a memory interface in an asynchronous mode by writing data to the memory device at least partially in response to a write enable signal on a first interface contact, and reading data from the memory device at least partially in response to a read enable signal on a second interface contact. The method further includes controlling data transfer in a synchronous mode by transferring data at least partially in response to a clock signal on the first interface contact, and providing a bidirectional data strobe signal on an interface contact not utilized in the asynchronous mode.

Technologies for allocating resources of managed nodes to workloads to balance multiple resource allocation objectives include an orchestrator server to receive resource allocation objective data indicative of multiple resource allocation objectives to be satisfied. The orchestrator server is additionally to determine an initial assignment of a set of workloads among the managed nodes and receive telemetry data from the managed nodes. The orchestrator server is further to determine, as a function of the telemetry data and the resource allocation objective data, an adjustment to the assignment of the workloads to increase an achievement of at least one of the resource allocation objectives without decreasing an achievement of another of the resource allocation objectives, and apply the adjustments to the assignments of the workloads among the managed nodes as the workloads are performed. Other embodiments are also described and claimed.

A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tilesMATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

Technologies for switching network traffic include a network switch. The network switch includes one or more processors and communication circuitry coupled to the one or more processors. The communication circuitry is capable of switching network traffic of multiple link layer protocols. Additionally, the network switch includes one or more memory devices storing instructions that, when executed, cause the network switch to receive, with the communication circuitry through an optical connection, network traffic to be forwarded, and determine a link layer protocol of the received network traffic. The instructions additionally cause the network switch to forward the network traffic as a function of the determined link layer protocol. Other embodiments are also described and claimed.