Ternary content addressable memory (TCAM) circuits are provided herein. In one example implementation, a TCAM circuit can include a first spin-orbit torque (SOT) magnetic tunnel junction (MTJ) element having a pinned layer coupled to a first read transistor controlled by a first search line, and having a spin hall effect (SHE) layer coupled in a first configuration across complemented write inputs. The TCAM circuit can include a second SOT MTJ element having a pinned layer coupled to a second read transistor controlled by a second search line, and having a SHE layer coupled in a second configuration across the complemented write inputs. The TCAM circuit can include a bias transistor configured to provide a bias voltage to drain terminals of the first read transistor and the second read transistor, and a voltage keeper element that couples the drain terminals to a match indicator line.

Ternary content addressable memory (TCAM) circuits are provided herein. In one example implementation, a TCAM circuit can include a first spin-orbit torque (SOT) magnetic tunnel junction (MTJ) element having a pinned layer coupled to a first read transistor controlled by a first search line, and having a spin hall effect (SHE) layer coupled in a first configuration across complemented write inputs. The TCAM circuit can include a second SOT MTJ element having a pinned layer coupled to a second read transistor controlled by a second search line, and having a SHE layer coupled in a second configuration across the complemented write inputs. The TCAM circuit can include a bias transistor configured to provide a bias voltage to drain terminals of the first read transistor and the second read transistor, and a voltage keeper element that couples the drain terminals to a match indicator line.

NAND-based content addressable memory is provided with a memory cell including two programmable resistive elements, such as memristors. These memory cells can be used to provide a programmable resistive address decoder. Such decoders can improve computer hardware performance in various ways: 1) improved translation lookaside buffers, 2) improved cache memory, and 3) by eliminating physical addresses entirely.

A hardware forwarding element is provided that includes a group of unit memories, a set of packet processing pipelines, and an error signal fabric. Each packet processing pipeline includes several of match action stages. Each match action stage includes a set of match action tables stored in a set of unit memories. Each unit memory is configured to detect an error in the unit memory and generate an error output when an error is detected in the memory unit. The error signal fabric, for each match action stage, combines error outputs of the unit memories storing match tables into a first bit in the error signal fabric. The error signal fabric, for each match action stage, combines error outputs of the unit memories storing action tables into a second bit in the error signal fabric.

A 3D memory device comprises: a substrate; a plurality of U-shaped memory cells strings each including a first, bit line-side string portion or pillar, a second, source line-side string portion or pillar and a buried string portion formed in the substrate and connected to a first end of the first string portion and to a first end of the second string portion, the U-shaped memory cells strings including stacks of memory cells along the first and second string portions. Bit line selectors are arranged at a second end of the first string portions opposed to the first end, for the selective connection to respective bit lines; source line selectors are arranged at a second end of the second string portions opposed to the first end, for the selective connection to respective source lines. There are first groups of first string portions, wherein in each first group the first string portions are aligned along a first direction to form a respective first row of first string portions; there are second groups of second string portions, wherein in each second group the second string portions are aligned along the first direction to form a respective second row of second string portions. The first rows of first string portions and the second rows of second string portions follow one another, alternately or in pairs, along a second direction transversal to the first direction. First rows of first string portions and/or second rows of second string portions consecutive along said second direction are spaced apart from each other a respective distance. Between a first row of first string portions and a second row of second string portions being consecutive along the second direction and spaced apart a distance equal to or less than a minimum distance allowed by the resolution of the manufacturing technology a respective slit is formed that extends in a third direction, orthogonal to the first and second directions, from the second end down to the substrate, the slit, interrupting layers forming the bit line selectors and the source line selectors and control gates of the memory cells of the memory cells stacks, with dimension, along the second direction, less than, equal to or higher than the minimum distance, and walls of the slit lying in planes parallel to the first and third directions delimit the first and second string portions.

An electronic comparison system includes input stages that successively provide bits of code words. One-shots connected to respective stages successively provide a first bit value until receiving a bit having a non-preferred value concurrently with an enable signal, and then provide a second, different bit value. An enable circuit provides the enable signal if at least one of the one-shots is providing the first bit value. A neural network system includes a crossbar with row and column electrodes and resistive memory elements at their intersections. A writing circuit stores weights in the elements. A signal source applies signals to the row electrodes. Comparators compare signals on the column electrodes to corresponding references using domain-wall neurons and store bit values in CMOS latches by comparison with a threshold.

An electronic comparison system includes input stages that successively provide bits of code words. One-shots connected to respective stages successively provide a first bit value until receiving a bit having a non-preferred value concurrently with an enable signal, and then provide a second, different bit value. An enable circuit provides the enable signal if at least one of the one-shots is providing the first bit value. A neural network system includes a crossbar with row and column electrodes and resistive memory elements at their intersections. A writing circuit stores weights in the elements. A signal source applies signals to the row electrodes. Comparators compare signals on the column electrodes to corresponding references using domain-wall neurons and store bit values in CMOS latches by comparison with a threshold.

Integrated circuits and methods of operating and producing the same are provided. In an exemplary embodiment, an integrated circuit includes a look up table with a first and second memory cell. The first memory cell includes a first magneto electric (ME) layer, a first free layer adjacent to the first ME layer, and a first fixed layer. The second memory cell includes a second ME layer, a second free layer adjacent to the second ME layer, and a second fixed layer. A first word line is in direct communication with the first and second free layers, wherein direct communication is a connection through zero, one, or more intervening components that are electrical conductors. A first bit line is in direct communication with the first ME layer, and a second bit line is in direct communication with the second ME layer.

A non-volatile programmable circuit configurable to perform logic functions, is provided. The programmable circuit can employ two-terminal non-volatile memory devices to store information, thereby mitigating or avoiding disturbance of programmed data in the absence of external power. Two-terminal resistive switching memory devices having high current on/off ratios and fast switching times can also be employed for high performance, and facilitating a high density array. For look-up table applications, input/output response times can be several nanoseconds or less, facilitating much faster response times than a memory array access for retrieving stored data.

A non-volatile programmable circuit configurable to perform logic functions, is provided. The programmable circuit can employ two-terminal non-volatile memory devices to store information, thereby mitigating or avoiding disturbance of programmed data in the absence of external power. Two-terminal resistive switching memory devices having high current on/off ratios and fast switching times can also be employed for high performance, and facilitating a high density array. For look-up table applications, input/output response times can be several nanoseconds or less, facilitating much faster response times than a memory array access for retrieving stored data.