A read-write circuit of a one-time programmable memory, including: an antifuse array including: n*n antifuse units, between a first node and a second node, the control terminals of switching elements in the antifuse units coupled to AND signals of different word line signals and bit line signals: the first switching device and the first capacitor connected in parallel between the second node and the second voltage source; the reference array including reference resistance and reference switching elements connected in series between the the first and third nodes, the reference switching element's control end coupled to OR signals of the n*n AND signals; the second switching device and the second capacitor connected in parallel between the third node and second voltage source; a comparison circuit's first input terminal coupled to the second node and second input terminal coupled to the third node. The circuit has simpler connections, smaller area, and higher reliability.

A memory circuit includes a memory unit, a memory control circuit and a pseudo ground voltage generation circuit. The memory control circuit includes: a level shifter circuit coupled to a variable supply voltage; a driver circuit coupled to the pseudo ground voltage generation circuit at the pseudo ground node. The driver circuit is powered by the variable supply voltage and generates an access signal according to the driving signal, to access data from the memory unit. Under a high-voltage operation, the variable supply voltage provides a first supply voltage level, so that a high level of the access signal corresponds to the first supply voltage level and the pseudo ground voltage generation circuit provides a pseudo ground voltage level at the pseudo ground node. A voltage difference between the first supply voltage level and the pseudo ground voltage level is smaller than a withstand voltage of the driver circuit.

A memory circuit includes a memory unit, a memory control circuit and a pseudo ground voltage generation circuit. The memory control circuit includes: a level shifter circuit coupled to a variable supply voltage; a driver circuit coupled to the pseudo ground voltage generation circuit at the pseudo ground node. The driver circuit is powered by the variable supply voltage and generates an access signal according to the driving signal, to access data from the memory unit. Under a high-voltage operation, the variable supply voltage provides a first supply voltage level, so that a high level of the access signal corresponds to the first supply voltage level and the pseudo ground voltage generation circuit provides a pseudo ground voltage level at the pseudo ground node. A voltage difference between the first supply voltage level and the pseudo ground voltage level is smaller than a withstand voltage of the driver circuit.

The present disclosure provides an anti-fuse, which includes at least one anti-fuse unit. The anti-fuse unit includes: a field-effect transistor, including a substrate, and a first doping region, a second doping region and a gate electrode that are disposed on the substrate; and a first electrode, arranged on the substrate and forming an anti-fuse capacitor with the substrate, the first electrode being connected to the first doping region, and configured to break down the anti-fuse capacitor by voltage adjustment between the second doping region and the substrate and write data to the anti-fuse unit, or configured to detect a current flowing through the second doping region by voltage adjustment for the gate electrode and determine whether to write data to the anti-fuse unit. By using the first electrode and the substrate as a pair of plates of the anti-fuse capacitor, a port of the anti-fuse unit may be omitted.

A memory circuit includes a memory unit, a memory control circuit and a pseudo ground voltage generation circuit. The memory control circuit includes: a level shifter circuit coupled to a variable supply voltage; a driver circuit coupled to the pseudo ground voltage generation circuit at the pseudo ground node. The driver circuit is powered by the variable supply voltage and generates an access signal according to the driving signal, to access data from the memory unit. Under a high-voltage operation, the variable supply voltage provides a first supply voltage level, so that a high level of the access signal corresponds to the first supply voltage level and the pseudo ground voltage generation circuit provides a pseudo ground voltage level at the pseudo ground node. A voltage difference between the first supply voltage level and the pseudo ground voltage level is smaller than a withstand voltage of the driver circuit.

A memory circuit includes a memory unit, a memory control circuit and a pseudo ground voltage generation circuit. The memory control circuit includes: a level shifter circuit coupled to a variable supply voltage; a driver circuit coupled to the pseudo ground voltage generation circuit at the pseudo ground node. The driver circuit is powered by the variable supply voltage and generates an access signal according to the driving signal, to access data from the memory unit. Under a high-voltage operation, the variable supply voltage provides a first supply voltage level, so that a high level of the access signal corresponds to the first supply voltage level and the pseudo ground voltage generation circuit provides a pseudo ground voltage level at the pseudo ground node. A voltage difference between the first supply voltage level and the pseudo ground voltage level is smaller than a withstand voltage of the driver circuit.

A method of forming a FG OTP/MTP cell with a P+ drain junction at the NCAP region and the resulting device are provided. Embodiments include forming MVPW regions laterally separated in a p-sub; forming a MVNW region in the p-sub between the MVPW regions; forming a first RX, a second RX, and a third RX in the MVPW and MVNW regions, respectively; forming a first and a second pair of floating gates separated over and perpendicular to the first and second RX and the second and third RX, respectively; forming a N+ source region between and adjacent to each FG of the first and the second pair in the second RX; and forming a pair of P+ drain regions in the second RX, each P+ drain region adjacent to a FG of the first pair and a FG of the second pair and remote from the N+ source region.

A charge storage cell includes a conductive substrate, a substantially vertical post comprising a first insulating material coupled to the conductive substrate and a conductive cap coupled to the vertical post. The charge storage cell also includes a top side planarizing layer comprising a second insulating material and covering the conductive cap. The conductive cap will support an electric charge injected through the top side planarizing layer by a modulated charged particle beam.

A method of forming a FG OTP/MTP cell with a P+ drain junction at the NCAP region and the resulting device are provided. Embodiments include forming MVPW regions laterally separated in a p-sub; forming a MVNW region in the p-sub between the MVPW regions; forming a first RX, a second RX, and a third RX in the MVPW and MVNW regions, respectively; forming a first and a second pair of floating gates separated over and perpendicular to the first and second RX and the second and third RX, respectively; forming a N+ source region between and adjacent to each FG of the first and the second pair in the second RX; and forming a pair of P+ drain regions in the second RX, each P+ drain region adjacent to a FG of the first pair and a FG of the second pair and remote from the N+ source region.

A charge storage cell includes a conductive substrate, a substantially vertical post comprising a first insulating material coupled to the conductive substrate and a conductive cap coupled to the vertical post. The charge storage cell also includes a top side planarizing layer comprising a second insulating material and covering the conductive cap. The conductive cap will support an electric charge injected through the top side planarizing layer by a modulated charged particle beam.