A semiconductor structure includes a first processor on a first die of a substrate. There is a second processor on a second die of the substrate. There is a one-time programmable (OTP) memory programming circuit, outside of the first and second die, and shared by the first and second processors. Each of the first and second processors include a one-time programmable (OTP) memory. The OTP memory programming circuit is configured to program each OTP memory.

A semiconductor chip device include device state fuses that may be used to configure various device states and corresponding security levels for the semiconductor chip as it transitions from wafer manufacturing to provisioned device. The device states and security levels prevent the semiconductor chip from being accessed and exploited, for example, during manufacturing testing. A secure boot flow process for a semiconductor chip over its lifecycle is also disclosed. The secure boot flow may start at the wafer manufacturing stage and continue on through the insertion of keys and firmware.

Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.

Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.

Techniques and circuitry are disclosed for efficiently implementing programmable memory array circuit architectures, including both non-volatile and volatile memories. The memory circuitry employs an antifuse scheme that includes an array of 1T bitcells, wherein each bitcell effectively contains one gate or transistor-like device that provides both an antifuse element and a selector device for that bitcell. In particular, the bitcell device has asymmetric trench-based source/drain contacts such that one contact forms a capacitor in conjunction with the spacer and gate metal, and the other contact forms a diode in conjunction with a doped diffusion area and the gate metal. The capacitor serves as the antifuse element of the bitcell, and can be programmed by breaking down the spacer. The diode effectively provides a Schottky junction that serves as a selector device which can eliminate program and read disturbs from bitcells sharing the same bitline/wordline.

A 3D semiconductor device, the device including: a first level overlaid by a second level overlaid by a third level overlaid by a fourth level, where the second level includes an array of first memory cells, the first memory cells including first transistors, the first transistors including first sources, first gates, and first drains, where each of the first transistors includes a single the first source, a single the first gate, and a single the first drain, where the third level includes an array of second memory cells, the second memory cells including second transistors, the second transistors including second sources, second gates, and second drains, where each of the second transistors includes a single the second source, a single the second gate, and a single the second drain, where at least one of the first memory cells is self-aligned to at least one of the second memory cells, being processed following the same lithography step; vertically oriented word-lines adapted to control a plurality of the first gates and a plurality of the second gates; and horizontal drain-lines directly connected to a plurality of the first drains and a plurality of the second drains.

A 3D semiconductor device, the device including: a first level overlaid by a second level overlaid by a third level overlaid by a fourth level, where the second level includes an array of first memory cells, the first memory cells including first transistors, the first transistors including first sources, first gates, and first drains, where each of the first transistors includes a single the first source, a single the first gate, and a single the first drain, where the third level includes an array of second memory cells, the second memory cells including second transistors, the second transistors including second sources, second gates, and second drains, where each of the second transistors includes a single the second source, a single the second gate, and a single the second drain, where at least one of the first memory cells is self-aligned to at least one of the second memory cells, being processed following the same lithography step; vertically oriented word-lines adapted to control a plurality of the first gates and a plurality of the second gates; and horizontal drain-lines directly connected to a plurality of the first drains and a plurality of the second drains.

A memory device, includes: a memory array comprising a plurality of bit cells arranged along a plurality of rows and along a plurality of columns, respectively; and a control logic circuit coupled to the memory array, and configured to determine respective locations of a first plurality of diagonal bit cells of the memory array for testing one or more peripheral circuits coupled to the memory array, wherein the control logic circuit is further configured to determine respective locations of at least a second plurality of diagonal bit cells of the memory array for testing the one or more peripheral circuits, wherein a number of the plurality of rows is different than a number of the plurality of columns and the first plurality of diagonal bit cells span a first equal number of rows and columns and the second plurality of diagonal bit cells also span a second equal number of rows and columns.

A storage device includes a basic memory to store a message received from an external device, a security memory to store an authentication key for authenticating the message, a controller to output a control signal, and a security engine to obtain the authentication key from the security memory with an authority to access the security memory in response to the control signal from the controller and to block an access of the controller to the security memory.

Certain aspects of the present disclosure are directed to methods and apparatus for programming a device having one or more programmable circuits to implement, for example, a machine learning model. One example apparatus generally includes a plurality of word lines, a plurality of bit lines, and an array of programmable circuits. Each programmable circuit is coupled to a corresponding word line in the plurality of word lines and to a corresponding bit line in the plurality of bit lines and comprises: a main resistor coupled between the corresponding word line and the corresponding bit line, an auxiliary resistor, a fuse coupled in series with the auxiliary resistor, wherein the auxiliary resistor and the fuse are coupled between the corresponding word line and the corresponding bit line, and a programming circuit configured to selectively blow the fuse.