A 3D semiconductor device including: a first level including first single crystal silicon and a plurality of first transistors; a first metal layer including interconnects between the plurality of first transistors; a second level on top of the first metal layer, the second level including a plurality of second transistors; a third level on top of the second level, the third level including a plurality of third transistors; an oxide layer on top of the third level; a fourth level on top of the oxide layer, the fourth level including second single crystal silicon and many fourth transistors, where at least one of the plurality of second transistors is at least partially self-aligned to at least one of the plurality of third transistors, both being formed following the same lithography step, the fourth level is bonded to the oxide layer, the bonded includes many metal to metal bonded structures.

A 3D semiconductor device including: a first level including first single crystal silicon and a plurality of first transistors; a first metal layer including interconnects between the plurality of first transistors; a second level on top of the first metal layer, the second level including a plurality of second transistors; a third level on top of the second level, the third level including a plurality of third transistors; an oxide layer on top of the third level; a fourth level on top of the oxide layer, the fourth level including second single crystal silicon and many fourth transistors, where at least one of the plurality of second transistors is at least partially self-aligned to at least one of the plurality of third transistors, both being formed following the same lithography step, the fourth level is bonded to the oxide layer, the bonded includes many metal to metal bonded structures.

A one-time write, read-only memory for storing trimming parameters includes an address pointer table, a fixed packet portion, and a flexible packet portion. The fixed packet portion includes one or more fixed packets, each fixed packet including trimming parameters for a component identified for trimming during a design phase. The flexible packet portion includes one or more flexible packets of different types. Each flexible packet includes trimming parameters for a component identified for trimming after the design phase. One packet type includes a length section and a number of fields equal to a value stored in the length section. Each field includes an address, a trimming parameter, and a mask. Another packet type includes trimming parameters associated with operands in operating instructions for a microcontroller, where the operands include an address and a mask.

A semiconductor system according to an embodiment includes: a semiconductor system including a normal memory cell array and a redundancy memory cell array for repairing a defective cell among memory cells within the normal memory cell array, and configured to output to an external a fail flag generated according to a number of fail bits within read data output from the redundancy memory cell array; and a host configured to store an address corresponding to the read data into a selected register group from among a plurality of register groups, the selected register group being matched to the fail flag.

A method of blowing an antifuse element is disclosed. An antifuse element including a first conductor, a second conductor, and a dielectric layer disposed between the first conductor and the second conductor is received, wherein the dielectric layer has a breakdown voltage. A first voltage is applied between the first conductor and the second conductor within a first time period, wherein the first voltage is less than the breakdown voltage. After applying the first voltage, a second voltage is applied between the first conductor and the second conductor to blow the antifuse element within a second time period, wherein the second voltage is greater than the breakdown voltage.

A method of blowing an antifuse element is disclosed. An antifuse element including a first conductor, a second conductor, and a dielectric layer disposed between the first conductor and the second conductor is received, wherein the dielectric layer has a breakdown voltage. A first voltage is applied between the first conductor and the second conductor within a first time period, wherein the first voltage is less than the breakdown voltage. After applying the first voltage, a second voltage is applied between the first conductor and the second conductor to blow the antifuse element within a second time period, wherein the second voltage is greater than the breakdown voltage.

An inspection system includes a display device including a nonvolatile memory, an inspection device configured to generate a writing voltage for application to the nonvolatile memory, and a protection part configured to apply the writing voltage to the nonvolatile memory when the writing voltage is within an allowable voltage range, and not to apply the writing voltage to the nonvolatile memory when the writing voltage is not within the allowable voltage range. The application of the writing voltage to the nonvolatile memory enables a multi-time programming (MTP) operation in which reference data writes to the nonvolatile memory.

A one-time write, read-only memory for storing trimming parameters includes an address pointer table, a fixed packet portion, and a flexible packet portion. The fixed packet portion includes one or more fixed packets, each fixed packet including trimming parameters for a component identified for trimming during a design phase. The flexible packet portion includes one or more flexible packets of different types. Each flexible packet includes trimming parameters for a component identified for trimming after the design phase. One packet type includes a length section and a number of fields equal to a value stored in the length section. Each field includes an address, a trimming parameter, and a mask. Another packet type includes trimming parameters associated with operands in operating instructions for a microcontroller, where the operands include an address and a mask.

A semiconductor structure includes a first processor on a first die of a substrate. There is a second processor on a second die of the substrate. There is a one-time programmable (OTP) memory programming circuit, outside of the first and second die, and shared by the first and second processors. Each of the first and second processors include a one-time programmable (OTP) memory. The OTP memory programming circuit is configured to program each OTP memory.

A bi-sided pattern processor comprises a plurality of storage-processing units (SPU's). Each of the SPU's comprises at least a memory array and a pattern-processing circuit. The preferred pattern processor further comprises a semiconductor substrate with opposing first and second surfaces. The memory array is disposed on the first surface, whereas the pattern-processing circuit is disposed on the second surface. The memory array stores patterns; the pattern-processing circuit processes these patterns; and, they are communicatively coupled by a plurality of inter-surface connections.