Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.

A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: $V_{\mathrm{MAX}}=\left(1+\frac{.Math.Z_2.Math.}{.Math.Z_1.Math.}\right)t_F{E}_{\mathrm{FM}}$ where V.sub.MAX is a capacitance boosting operating voltage, Z.sub.1 is impedance of the ferroelectric film, Z.sub.2 is impedance of the dielectric film, t.sub.F is a thickness of the ferroelectric film, and E.sub.FM is an electric field applied to the ferroelectric film having a maximum polarization.

A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: $V_{\mathrm{MAX}}=\left(1+\frac{.Math.Z_2.Math.}{.Math.Z_1.Math.}\right)t_F{E}_{\mathrm{FM}}$ where V.sub.MAX is a capacitance boosting operating voltage, Z.sub.1 is impedance of the ferroelectric film, Z.sub.2 is impedance of the dielectric film, t.sub.F is a thickness of the ferroelectric film, and E.sub.FM is an electric field applied to the ferroelectric film having a maximum polarization.

A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:

[00001]$V_{\mathrm{MAX}}=\left(1+\frac{.Math.Z_2.Math.}{.Math.Z_1.Math.}\right)t_F{E}_{\mathrm{FM}}$

where V.sub.MAX is a capacitance boosting operating voltage, Z.sub.1 is impedance of the ferroelectric film, Z.sub.2 is impedance of the dielectric film, t.sub.F is a thickness of the ferroelectric film, and E.sub.FM is an electric field applied to the ferroelectric film having a maximum polarization.

A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.

A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

A display panel, a stage circuit, and a driving method of the stage circuit are provided. The stage circuit includes cascaded shift register circuits. Each cascaded shift register circuit includes: a first control module, a second control module, and an output module. The first control module receives an input signal and a charging signal, and generates a voltage signal at a second node in response to a first clock signal and a voltage signal at a first node. With an exception of a first stage cascaded shift register circuit, a first transistor of a current stage cascaded shift register circuit has a first end connected to a signal output terminal of a previous stage cascaded shift register circuit, a second end connected to the second node, and a control end connected to the first node.

A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.

A shift register and driving method thereof, a gate driving circuit and a display device are provided. The shift register includes a first input unit, a second input unit, a pull-up control unit, a pull-down control unit, an output control unit and an output reset unit, wherein the first input unit, the second input unit, the pull-up control unit, the pull-down control unit and the output control unit are coupled to a first node, and the pull-up control unit, the pull-down control unit and the output reset unit are coupled to a second node.

A semiconductor device or the like with a novel structure that can change the orientation of the display is provided. A semiconductor device or the like with a novel structure, in which a degradation in transistor characteristics can be suppressed, is provided. A semiconductor device or the like with a novel structure, in which operation speed can be increased, is provided. A semiconductor device or the like with a novel structure, in which a dielectric breakdown of a transistor can be suppressed, is provided. The semiconductor device or the like has a circuit configuration capable of switching between a first operation and a second operation by changing the potentials of wirings. By switching between these two operations, the scan direction is easily changed. The semiconductor device is configured to change the scan direction.