A memory device includes a data pad; a read circuit outputting read or test data to the data pad according to a read timing signal and a read command; a write circuit receiving write data through the data pad according to a write timing signal; a test register circuit performing a preset operation on data and storing the data, and transferring the stored data as the test data in response to the read command, during a first test mode; a data compression circuit generating a test output signal by compressing the test data and outputting the test output signal to a first test output pad, during the first test mode; and a timing control circuit generating, according to first to third output control signals, the read timing signal and generating the write timing signal by delaying the read timing signal, during the first test mode.

Technology is disclosed herein for testing circuitry that controls memory operations in a memory structure having non-volatile memory cells. The testing of the circuitry can be performed without the memory structure. The memory structure may reside on one semiconductor die, with sense blocks and a control circuit on another semiconductor die. The control circuit is able to perform die level control of memory operations in the memory structure. The control circuit may control the sense blocks to simulate sensing of non-volatile memory cells in the memory structure even though the sense blocks are not connected to the memory structure. The control circuit verifies correct operation of the semiconductor die based on the simulated sensing. For example, the control circuit may verify correct operation of a state machine that controls sense operations at a die level. Thus, the operation of the semiconductor die may be tested without the memory structure.

Technology is disclosed herein for testing circuitry that controls memory operations in a memory structure having non-volatile memory cells. The testing of the circuitry can be performed without the memory structure. The memory structure may reside on one semiconductor die, with sense blocks and a control circuit on another semiconductor die. The control circuit is able to perform die level control of memory operations in the memory structure. The control circuit may control the sense blocks to simulate sensing of non-volatile memory cells in the memory structure even though the sense blocks are not connected to the memory structure. The control circuit verifies correct operation of the semiconductor die based on the simulated sensing. For example, the control circuit may verify correct operation of a state machine that controls sense operations at a die level. Thus, the operation of the semiconductor die may be tested without the memory structure.

The present disclosure relates to using a coating to protect a portion of an optical fiber that is intended to buckle within a fiber optic connector. The fiber optic connector can include a bare fiber optical connector.

In described examples, circuitry for saving and restoring a design block state includes first memories configured to receive, and store in different first memories in a first order, different portions of first data; and a second memory coupled to first memories. First memories with the most memory cells have N memory cells. First memories with fewer memory cells have M memory cells. When saving state, first data from different first memories is written in a second order to different corresponding regions of the second memory as second data. The second order repeats portions of the first data stored in sequentially first N mod M cells, determined using the first order, of corresponding first memories with fewer cells. When restoring state, second data is read from the second memory and stored, in the first order, in corresponding first memories; repeated portions are repeatedly stored in corresponding first memories with fewer cells.

An example method for restricting read access to content in the component circuitry and securing data in the supply item is disclosed. The method identifies the status of a read command, and depending upon whether the status disabled or enabled, either blocks the accessing of encrypted data stored in the supply chip, or allows the accessing of the encrypted data stored in the supply chip.

The design of Dynamic Random Access Memory (DRAM) pass transistors is provided via generating a first plurality of transistor leakage currents by simulating different dopant configurations in a transistor; generating a second plurality of transistor leakage currents by simulating, for each dopant configuration of the different dopant configurations, a single trap insertion in the transistor; fitting the first and second pluralities of transistor leakage currents with first and second leakage current distributions; combining the first and second leakage current distributions to produce a third leakage current distribution; generating a third plurality of statistically generated leakage currents for a specified trap density for the transistor based on the first leakage current distribution, on the second leakage current distribution and on a specified trap density; and modeling and evaluating a DRAM cell including the transistor based on the third plurality of statistically generated leakage currents.

The present application relates to a circuit simulation test method and apparatus, a device, and a medium. The method includes: creating a parametric data model, wherein the parametric data model is configured to generate preset write data based on a preset parameter; creating a test platform, wherein the test platform is configured to generate a test result based on the preset write data; creating an eye diagram generation module, wherein the eye diagram generation module is configured to generate a data eye diagram based on the test result; and conducting a simulation test, inputting the preset write data to the test platform and obtaining the test result, and generating the data eye diagram by using the eye diagram generation module.

A system and method for virtually addressing an array of accelerator tiles of a mixed-signal integrated circuit includes testing each of a plurality of distinct matrix multiply accelerator (MMA) tiles of a grid of MMA tiles, the grid of MMA tiles being defined by the plurality of distinct grid of MMA tiles being arranged in a plurality of rows and a plurality of columns along an integrated circuit, each of the plurality of distinct MMA tiles within the grid of MMA tiles having a distinct physical address on the integrated circuit; identifying one or more defective MMA tiles within the grid of MMA tiles based on the testing; and configuring the grid of MMA tiles with a plurality of virtual addresses for routing data to or routing data from one or more non-defective MMA tiles of grid of MMA tiles based on identifying the one or more defective MMA tiles.

Disclosed is a nonvolatile memory device which includes a memory cell array, a row decoder circuit that selects one wordline as a target of a program operation, a page buffer circuit that stores data to be written in memory cells connected with the selected wordline in the program operation, and a pass/fail check circuit that determines a pass or a fail of the program operation. In the program operation, the pass/fail check circuit detects a first program speed of first memory cells and a second program speed of second memory cells, and determines a program fail based on the first program speed and the second program speed.