According to one embodiment, in a semiconductor memory device, a gate electrode of a first PMOS transistor and a gate electrode of a first NMOS transistor are commonly connected, and a first contact plug is connected to the commonly-connected gate electrodes to at least partly overlap with an isolation portion when viewed in a third direction perpendicular to a first direction and a second direction. A gate electrode of a second PMOS transistor and a gate electrode of a second NMOS transistor are commonly connected, and a second contact plug is connected to the commonly-connected gate electrodes to at least partly overlap with the isolation portion when viewed in the third direction.

A memory device includes a plurality of word lines elongated along a first direction, and at least one memory unit. The at least one memory unit includes a plurality of memory cells, at least one bit line, and at least one column word line. The plurality of memory cells are arranged along a second direction different from the first direction. The at least one bit line is elongated along the second direction, and configured to transmit data of a selected memory cell. The at least one column word line is elongated along the second direction, and configured to control electrical connections between the memory cells and the at least one bit line, wherein the selected memory cell is selected by a corresponding word line and the at least one column word line.

Disclosed herein are related to a memory array including a set of memory cells and a set of switches to configure the set of memory cells. In one aspect, each switch is connected between a corresponding local line and a corresponding subset of memory cells. The local clines may be connected to a global line. Local lines may be metal rails, for example, local bit lines or local select lines. A global line may be a metal rail, for example, a global bit line or a global select line. A switch may be enabled or disabled to electrically couple a controller to a selected subset of memory cells through the global line. Accordingly, the set of memory cells can be configured through the global line rather than a number of metal rails to achieve area efficiency.

Examples of the present disclosure provide apparatuses and methods for determining a vector population count in a memory. An example method comprises determining, using sensing circuitry, a vector population count of a number of fixed length elements of a vector stored in a memory array.

Various implementations described herein are directed to a device having memory control circuitry having global passgates and a read-write driver that provides a global read-write signal to the global passgates. The device may have sense amplifier circuitry with local-drivers and a sense amplifier driver that provides a sense amplifier enable signal to the local-drivers, wherein the local-drivers may include multiple buffers coupled to the sense amplifier driver in parallel.

Disclosed herein is an apparatus that includes first and second digit lines, a sense amplifier configured to amplify a potential difference between the first and second digit lines, a driver circuit configured to drive each of the first and second digit lines to different one of first and second logic levels from each other, a first transistor coupled between the driver circuit and the first digit line, a second transistor coupled between the driver circuit and the second digit line, and a control circuit configured to supply a first potential to control electrodes of the first and second transistors in response to a write command, and supply a second potential different from the first potential to the control electrodes of the first and second transistors in response to a read command.

A memory device and an operation method thereof are provided. The memory device comprises: a memory array; a decoding circuit coupled to the memory array, the decoding circuit including a plurality of first transistors, a plurality of second transistors and a plurality of inverters, the first transistors and the second transistors are paired; and a controller coupled to the decoding circuit, wherein the paired first transistors and the paired second transistors are respectively coupled to a corresponding one inverter among the inverters, and respectively coupled to a corresponding one among a plurality of local bit lines or a corresponding one among a plurality of local source lines; the first transistors are coupled to a global bit line; and the second transistors are coupled to a global source line.

The present disclosure includes apparatuses and methods for bank to bank data transfer. An example apparatus includes a plurality of banks of memory cells, an internal bus configured to transfer data between the plurality of banks and an external bus interface, and a bank-to-bank transfer bus configured to transfer data between the plurality of banks.

Embodiments relate to a transmission circuit, a transmission method, a storage apparatus, and a storage medium. The transmission circuit includes a comparison module and a data conversion module. The comparison module is configured to receive first data on a first data line and second data on a second data line, and compare the first data with the second data to output a comparison result indicating whether number of different bits between the first data and the second data exceeds a preset threshold, wherein the first data and the second data have the same preset bit width. The data conversion module is electrically connected to the first data line, the comparison module and the second data line, and is configured to invert the first data and transmit the inverted first data to the second data line when the comparison result is indicative of exceeding the preset threshold.

Various SRAM non-clamping write driver with write-assist are disclosed, including a write driver circuitry that does not clamp the Bitlines (BLs) during the write operations, and a negative BL Write-Assist (WA) circuit that provides a negative BL boost desirable for use with high-density bit cells. When used with memories other than those having high-density bit cells, the negative BL WA improves the minimum voltage (Vmin) and frequency of operation.