A memory device is disclosed. The memory device includes a memory array including a first memory cell arranged in a first row and a first column and a second memory cell arranged in the first row and a second column next to the first column. The first memory cell is configured to perform a write operation in response to a first write signal transmitted through a first write word line. The second memory cell is configured to perform the write operation in response to a second write signal transmitted through a second write word line. The second write word line is separated from and next to the first write word line. The first write signal and the second write signal have different logic values.

An aspect of the disclosure relates to a latch array, including: a first set of master latches including a first set of clock inputs configured to receive a master clock, a first set of data inputs configured to receive a first set of data, and a first set of data outputs coupled to a set of bitlines, respectively; a second set of master latches including a second set of clock inputs configured to receive the master clock, a first set of write-bit inputs configured to receive a set of write-bit signals, and a set of write-bit outputs coupled to a set of write-bit lines, respectively; and an array of slave latches, wherein the slave latches in columns of the array include a second set of data inputs coupled to the set of bitlines, and a second set of write-bit inputs coupled to the set of write-bit lines, respectively.

A memory device is disclosed. The memory device includes a memory array including a first memory cell arranged in a first row and a first column and a second memory cell arranged in the first row and a second column next to the first column. The first memory cell is configured to perform a write operation in response to a first write signal transmitted through a first write word line. The second memory cell is configured to perform the write operation in response to a second write signal transmitted through a second write word line. The second write word line is separated from and next to the first write word line. The first write signal and the second write signal have different logic values.

A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.

A system and method for high-speed, low-power cryogenic computing are presented, comprising ultrafast energy-efficient RSFQ superconducting computing circuits, and hybrid magnetic/superconducting memory arrays and interface circuits, operating together in the same cryogenic environment. An arithmetic logic unit and register file with an ultrafast asynchronous wave-pipelined datapath is also provided. The superconducting circuits may comprise inductive elements fabricated using both a high-inductance layer and a low-inductance layer. The memory cells may comprise superconducting tunnel junctions that incorporate magnetic layers. Alternatively, the memory cells may comprise superconducting spin transfer magnetic devices (such as orthogonal spin transfer and spin-Hall effect devices). Together, these technologies may enable the production of an advanced superconducting computer that operates at clock speeds up to 100 GHz.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

A method includes receiving a selection signal from a third-party device and a status signal from the third-party device. A data signal from the third-party device is latched when both the selection signal and the status signal are active. In addition, a second selection signal and a second status signal can be received from a second third-party device and a second data signal latched when both the second selection signal and the second status signal are active.

A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.