The disclosed controller includes a DDR architecture that includes a dual-channel interface designed to include DQS IO ports configured to generate a first DQS signal that is a distance of substantially 0.125 times the period of a clock signal (T denoting the 0.125 of the period of the clock signal) ahead of a rising edge of the clock signal and a second DQS signal that is a distance of substantially 0.125 times the period of the clock signal behind the rising edge of a clock signal. If T is more than a tDQSS then T is set to tDQSS, where tDQSS is a maximum allowable time between either DQS signal and the rising edge of the clock signal.

A sensing circuit for sensing an analog signal includes a level shifter that shifts the analog signal from a high voltage domain to a low voltage domain. The signal originates from the high voltage domain, and is passed to the low voltage domain through the level shifter. A source line provides the analog signal, which can be selectively switched into a sense amplifier circuit. The sense amplifier is in the low voltage domain and generates a digital output to represent the sensed analog signal.

Systems, devices, and methods related to non-volatile memory are described. A non-volatile memory array may be employed as a main memory array for a system on a chip (SoC) or processor. A controller may interface between the non-volatile memory array and the SoC or processor using a protocol agnostic to characteristics of non-volatile memory operation including different page sizes or access time requirements, etc. A virtual memory bank at the controller may be employed to facilitate operations between the SoC or processor and the non-volatile memory array. The controller may be coupled with a buffer to facilitate rapid data operation, and the controller may be configured to selectively access data at the non-volatile array to account for data stored in the virtual memory bank or the buffer. The controller, the virtual memory bank, and the buffer may be configured on one chip separate from the SoC or processor.

A power control system, method, and architecture are disclosed for a multi-bank memory which provides independent, concurrent memory access to at least one memory block in each memory bank by using observation circuits to monitor bus masters connected over bus master interface signals to an interconnect for memory access requests to the multi-bank memory and to provide notifications to a power control circuitry that a valid memory access request was issued by a bus master over the bus master interface, where the power control circuitry processes the notifications received from each observation circuit and generates therefrom power control signals that are provided directly to each memory block and to bypass the interconnect, thereby separately controlling a power state for each memory block with power-up control signals that arrive at each memory block at or before a memory access request sent over the interconnect.

A memory module includes a plurality of memory integrated circuit (IC) packages to store data and a command buffer IC to buffer one or more memory commands destined for the memory IC packages. The command buffer IC includes a first interface circuit and one or more second interface circuits. The first interface circuit receives the one or more memory commands. The one or more second interface circuits output a pre-programmed command sequence to one or more devices separate from the command buffer IC, the pre-programmed command sequence output in response to the one or more memory commands matching a pre-programmed reference command pattern.

A semiconductor device includes: a memory region selection circuit for generating memory region select signals based on a memory region address signal and a mode identification signal, and activating one or more memory region select signals among memory region select signals during a first mode, or activating two or more memory region select signals among the memory region select signals during a second mode; a column selection circuit for generating column select signals based on a column address signal and the mode identification signal, and changing the column select signals during the first mode, or retaining the column select signals during the second mode; and memory regions of which one or more memory regions are accessed during the first mode or two or more memory regions are accessed during the second mode, based on the memory region select signals and the column select signals.

The disclosed controller includes a DDR architecture that includes a dual-channel interface designed to include DQS IO ports configured to generate a first DQS signal that is a distance of substantially 0.125 times the period of a clock signal (T denoting the 0.125 of the period of the clock signal) ahead of a rising edge of the clock signal and a second DQS signal that is a distance of substantially 0.125 times the period of the clock signal behind the rising edge of a clock signal. If T is more than a tDQSS then T is set to tDQSS, where tDQSS is a maximum allowable time between either DQS signal and the rising edge of the clock signal.

The disclosed controller includes a DDR architecture that includes a dual-channel interface designed to include DQS IO ports configured to generate a first DQS signal that is a distance of substantially 0.125 times the period of a clock signal (T denoting the 0.125 of the period of the clock signal) ahead of a rising edge of the clock signal and a second DQS signal that is a distance of substantially 0.125 times the period of the clock signal behind the rising edge of a clock signal. If T is more than a tDQSS then T is set to tDQSS, where tDQSS is a maximum allowable time between either DQS signal and the rising edge of the clock signal.

Apparatuses, systems, and methods for module level error correction. Multiple memory devices a packaged together in a memory module. The module includes a module error correction code (ECC) circuit which pools information multiple memory devices on the module. In an example read operation, multiple memory devices each provide a codeword which includes data bits and parity bits. The codewords may include data bits provided along a data bus and parity bits provided along a parity bus. The ECC circuit pools the codewords and detects errors in the pooled codewords.

Methods, systems, and apparatuses related to memory operation with on-die termination (ODT) are provided. A memory device may be configured to provide ODT at a first portion (e.g., rank) during multiple communications at a second portion (e.g., rank). For example, a memory device may receive a first command instructing a first portion to perform a first communication and instructing a second portion to enter an ODT mode. The device may perform, with the first portion, the first communication with a host while the second portion is in the ODT mode. The device may receive a second command instructing the first portion to perform a second communication, and the device may perform, with the first portion, the second communication while the second portion remains in the ODT mode. The second portion may persist in the ODT mode for an indicated number of communications, or until instructed to exit the ODT mode.