A receiver implemented in an integrated circuit device is described. The receiver circuit comprises a first receiver circuit configured to receive first data, wherein the first receiver circuit comprises a first memory element configured to receive the first data in response to a first clock signal; a latency mirror circuit configured to receive second data, wherein the latency mirror circuit comprises a second memory element configured to receive the second data in response to a second clock signal; and a latency control circuit configured to detect a latency in the second data, wherein the latency control circuit adjusts a phase of the first clock signal used to receive the first data in the first receiver circuit.

An operation method of a memory device includes sequentially receiving an active command and a precharge command from an external device, during a first time interval, applying a first activation voltage to a selected wordline in response to the active command, applying a second activation voltage to the selected wordline after the first time interval elapses from a first time point when the first active command is received, and applying a first deactivation voltage to the selected wordline in response to the precharge command. The second activation voltage is lower than the first activation voltage and is higher than the first deactivation voltage.

A circuit for controlling a memory includes a frequency parameter generator, a clock generator and a memory controller. The frequency parameter generator generates at least one frequency control signal. The clock generator, coupled to the frequency generator, increases or decreases the frequency of a clock signal by a multiple number of times according to the frequency control signal, such that the frequency of the clock signal is adjusted from an initial frequency to a target frequency. The memory controller, coupled to the clock generator, receives the clock signal and controls the memory according to the clock signal.

A temperature associated with the memory component is determined. A frequency to perform an operation on a memory cell associated with the memory component is determined based on the temperature associated with the memory component. The operation is performed on the memory cell at the determined frequency to transition the memory cell from a state associated with an increased error rate for data stored at the memory cell to another state associated with a decreased error rate for the data stored at the memory cell.

An operation method of a memory device includes sequentially receiving an active command and a precharge command from an external device, during a first time interval, applying a first activation voltage to a selected wordline in response to the active command, applying a second activation voltage to the selected wordline after the first time interval elapses from a first time point when the first active command is received, and applying a first deactivation voltage to the selected wordline in response to the precharge command. The second activation voltage is lower than the first activation voltage and is higher than the first deactivation voltage.

A memory device includes a first volatile memory chip that includes a first volatile memory cell array storing first data and that receives or outputs the first data at a first bandwidth, and a second volatile memory chip that includes a second volatile memory cell array storing second data and that receives or outputs the second data at a second bandwidth different from the first bandwidth.

A memory device includes a memory cell array that includes a plurality of memory cell rows, a temperature sensor that detects a temperature of the memory cell array and generates internal temperature data, a first register that stores external temperature data received from outside of the memory device, and a refresh control unit that determines a skip ratio of refresh commands received at a refresh frequency that corresponds to the external temperature data by comparing the internal temperature data and the external temperature data and performing a refresh operation for the plurality of memory cell rows in response to refresh commands skipped and transmitted based on the skip ratio.

A memory control circuit includes an input circuit that receives data to be written to a storage having multiple nonvolatile memory cells, and a control circuit, when a second number of bits that are included in a first bit string and having a first number of bits and have a second logical value different from a first logical value equal to initial values stored in the multiple nonvolatile memory cells is equal to or smaller than a first threshold, writes the first bit string and the first additional value to the storage, and that associates, when the second number of the bits is larger than a second threshold larger than the first threshold, a second bit string obtained by reversing logical values of all the bits of the first bit string with a second additional value and writes the second bit string and the second additional value to the storage.

A memory device includes a memory device comprising a plurality of memory cells; and a processing device coupled to the memory device, the processing device configured to: determine at least one real-time measure including at least one environmental parameter or at least one operational parameter, or a combination thereof, wherein: the environmental parameter corresponds to one or more physical conditions concerning the system, the operational parameter represents one or more operations performed by the system; and generate an adjusted sampling rate based on the real-time measure, wherein the adjusted sampling rate replaces a previous sampling rate used to control a timing associated with gathering information for a sampling process.

A temperature associated with the memory component is determined. A frequency to perform an operation on a memory cell associated with the memory component is determined based on the temperature associated with the memory component. The operation is performed on the memory cell at the determined frequency to transition the memory cell from a state associated with an increased error rate for data stored at the memory cell to another state associated with a decreased error rate for the data stored at the memory cell.