A temperature associated with the memory component is determined. A frequency to perform an operation on a memory cell associated with the memory component is determined based on the temperature associated with the memory component. The operation is performed on the memory cell at the determined frequency to transition the memory cell from a state associated with an increased error rate for data stored at the memory cell to another state associated with a decreased error rate for the data stored at the memory cell.

A temperature associated with the memory component is determined. A frequency to perform an operation on a memory cell associated with the memory component is determined based on the temperature associated with the memory component. The operation is performed on the memory cell at the determined frequency to transition the memory cell from a state associated with an increased error rate for data stored at the memory cell to another state associated with a decreased error rate for the data stored at the memory cell.

A circuit for controlling a memory includes a frequency parameter generator, a clock generator and a memory controller. The frequency parameter generator generates at least one frequency control signal. The clock generator, coupled to the frequency generator, increases or decreases the frequency of a clock signal by a multiple number of times according to the frequency control signal, such that the frequency of the clock signal is adjusted from an initial frequency to a target frequency. The memory controller, coupled to the clock generator, receives the clock signal and controls the memory according to the clock signal.

A memory device includes a first volatile memory chip that includes a first volatile memory cell array storing first data and that receives or outputs the first data at a first bandwidth, and a second volatile memory chip that includes a second volatile memory cell array storing second data and that receives or outputs the second data at a second bandwidth different from the first bandwidth.

Various embodiments provide for determining a delay of a data signal with respect to a data strobe signal within a memory system comprising a memory controller and a memory module. In particular, some embodiments adjust a phase between a data signal and a data strobe signal such that a data eye of the data signal arrives at a receiver latch of a memory module can be centered on a transition of the data strobe signal. By centering the data eye of the data signal with the transition of the data strobe signal, various embodiments can ensure that the data strobe signal transition falls between the leading and trailing edges of the data eye, which in turn permits the memory module to obtain correct data from the memory controller during a write operation.

An electronic device may include a pulse delay circuit and a logic circuit. The pulse delay circuit generates an input control pulse based on a command pulse. The logic circuit may be configured to output some input signals from a plurality of input signals as transmitted input signals based on the input control pulse while the input signals maintain a certain logic level combination. The logic circuit may be configured to perform a predetermined logical operation of the transmitted input signals according to a remaining input signal from the plurality of input signals to generate an output signal.

A memory control circuit includes an input circuit that receives data to be written to a storage having multiple nonvolatile memory cells, and a control circuit, when a second number of bits that are included in a first bit string and having a first number of bits and have a second logical value different from a first logical value equal to initial values stored in the multiple nonvolatile memory cells is equal to or smaller than a first threshold, writes the first bit string and the first additional value to the storage, and that associates, when the second number of the bits is larger than a second threshold larger than the first threshold, a second bit string obtained by reversing logical values of all the bits of the first bit string with a second additional value and writes the second bit string and the second additional value to the storage.

A training controller, semiconductor device and a system including the same are disclosed, which relates to technology for training a phase of data. The training controller may include a read training circuit configured to control a read training operation based on a read signal and a control signal. The training controller may include a write training circuit configured to control a write training operation based on a write signal and a write training signal. The training controller may include a reset controller configured to generate a reset signal when a mismatch occurs in the read training operation or the write training operation.

An electronic device may include a pulse delay circuit and a logic circuit. The pulse delay circuit generates an input control pulse based on a command pulse. The logic circuit may be configured to output some input signals from a plurality of input signals as transmitted input signals based on the input control pulse while the input signals maintain a certain logic level combination. The logic circuit may be configured to perform a predetermined logical operation of the transmitted input signals according to a remaining input signal from the plurality of input signals to generate an output signal.

A memory device includes a first memory array, a second memory array, and a page cache circuit coupled to the first memory array and the second memory array. The page cache circuit includes at least one set of concurrent resources and at least one shared resource, wherein the at least one set of concurrent resources are asynchronously and concurrently accessible by the first memory array and the second memory array, and wherein the at least one shared resource is accessible in a time-multiplexed fashion by the first memory array and the second memory array.