A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.

A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications.

Disclosed herein is a device that includes at least one functional semiconductor element; and static electric field source(s) associated with the at least one functional semiconductor element, the static electric field source(s) comprising at least one electret component and having a heterogeneous charge distribution. Also disclosed herein is a device includes a functional semiconductor element; a static electric field source comprising at least one electret element, the static electric field source imparting a static electric field to the functional semiconductor element; and at least one nuclear radiation source for continuously imparting nuclear beta radiation to the at least one electret element and/or the functional semiconductor element. Use of at least a radioactive beta source for replenishing charge in an electret, as well as use of at least a radioactive beta source for simultaneously replenishing charge in an electret and modifying charge mobility of a semiconductor material, are also disclosed. A nuclear battery includes at least one functional semiconductor element; at least one radiation source imparting nuclear radiation to the at least one functional semiconductor element; and at least one electret imparting a static electric field to the at least one functional semiconductor element.

Disclosed herein is a device that includes at least one functional semiconductor element; and static electric field source(s) associated with the at least one functional semiconductor element, the static electric field source(s) comprising at least one electret component and having a heterogeneous charge distribution. Also disclosed herein is a device includes a functional semiconductor element; a static electric field source comprising at least one electret element, the static electric field source imparting a static electric field to the functional semiconductor element; and at least one nuclear radiation source for continuously imparting nuclear beta radiation to the at least one electret element and/or the functional semiconductor element. Use of at least a radioactive beta source for replenishing charge in an electret, as well as use of at least a radioactive beta source for simultaneously replenishing charge in an electret and modifying charge mobility of a semiconductor material, are also disclosed. A nuclear battery includes at least one functional semiconductor element; at least one radiation source imparting nuclear radiation to the at least one functional semiconductor element; and at least one electret imparting a static electric field to the at least one functional semiconductor element.

The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

The present invention relates to a betavoltaic battery comprising: a substrate; an intrinsic semiconductor unit disposed on the substrate; an N-type semiconductor unit and a P-type semiconductor unit that are disposed on at least a portion of a surface of the intrinsic semiconductor unit and arranged alternately; and beta ray sources that are disposed on the N-type semiconductor unit and the P-type semiconductor unit. The present invention also relates to a method for manufacturing a betavoltaic battery, comprising the steps of: (A) forming an intrinsic semiconductor unit on a substrate; (B) forming an N-type semiconductor unit and a P-type semiconductor unit alternately by irradiating at least a portion of the surface of the intrinsic semiconductor unit with an ion beam; and (C) disposing a beta ray source on the N-type semiconductor unit and the P-type semiconductor unit.

A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.

A radiation powered device includes a first electrode, a second electrode, a semiconductor disposed between the first and second electrodes, and a radioactive source configured to generate a flow of electrons through the semiconductor between the first and second electrodes, wherein the semiconductor comprises diamond material, wherein the radioactive source is embedded within the diamond material, wherein the radioactive source comprises a beta-emitting radioisotope, and atoms of the radioisotope are either substitutionally or interstitially integrated into the diamond material, wherein the diamond material comprises a plurality of regions in the form of layers within a continuous crystal lattice of the diamond material, and wherein at least one layer of the diamond material comprises the radioactive source and at least one layer of the diamond material does not comprise the radioactive source.

A device for producing electricity. The device comprises a source of tritium radioisotopes, an element Th maintained at a temperature Th, and an element Tc maintained at a temperature Tc; Tc lower than Th. The source generates heat and is disposed in thermal communication with the element Th to maintain the temperature Th. First and second doped elements, each doped with a different dopant type, are oriented in parallel relative to the heat flow path between the element Th and the element Tc and electrically connected in series According to the Seebeck effect, a voltage is generated between the first and second doped elements due to a temperature differential between the Tc and Th, causing current to flow through the serially-connected doped elements. Helium generated during generation of the radioisotopes is vented from the device.

A device for producing electricity. The device comprises a source of tritium radioisotopes, an element Th maintained at a temperature Th, and an element Tc maintained at a temperature Tc; Tc lower than Th. The source generates heat and is disposed in thermal communication with the element Th to maintain the temperature Th. First and second doped elements, each doped with a different dopant type, are oriented in parallel relative to the heat flow path between the element Th and the element Tc and electrically connected in series According to the Seebeck effect, a voltage is generated between the first and second doped elements due to a temperature differential between the Tc and Th, causing current to flow through the serially-connected doped elements. Helium generated during generation of the radioisotopes is vented from the device.